Aaron W Berke, Age 36Portland, OR

2019036, Dec 5, 2019

May 30, 2018

15/993422

- Fremont CA, US
Robert Rash - West Linn OR, US
Aaron Berke - Portland OR, US
Jingbin Feng - Lake Oswego OR, US

F16K 37/00
F16K 11/085
F16K 31/122

A valve assembly used with a process chamber for depositing a film on a wafer. A valve body surrounds a bore and includes an inlet, a first outlet and a second outlet, at least one of them exiting into the process chamber. A piston includes a first section having a first flow path, and a second section having a second flow path. A linear motion actuator is adapted to couple with the piston and controls linear movement of the piston through the bore between a first position and a second position. In the first position, the first section of the piston is aligned with the inlet such that fluid flows to the first outlet via the first flow path. In the second position, the second section of the piston is aligned with the inlet such that fluid flows to the second outlet via the second flow path.

2019030, Oct 3, 2019

Jun 5, 2019

16/432398

- Fremont CA, US
Aaron Berke - Portland OR, US
Bryan L. Buckalew - Tualatin OR, US
Steven T. Mayer - Aurora OR, US

C25D 5/08
C25D 17/00
C25D 5/18
C25D 21/12
C25D 21/10
C25D 17/06
C25D 7/12
C25D 5/04

The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold between the channeled plate and substrate, and on the sides by a flow confinement ring. A seal may be provided between the bottom surface of a substrate holder and the top surface of an element below the substrate holder (e.g., the flow confinement ring). During plating, fluid enters the cross flow manifold through channels in the channeled plate, and through a cross flow inlet, then exits at the cross flow exit, positioned opposite the cross flow inlet. The apparatus may switch between a sealed state and an unsealed state during electroplating, for example by lowering and lifting the substrate and substrate holder as appropriate to engage and disengage the seal.

2019008, Mar 21, 2019

Sep 18, 2017

15/707805

- Fremont CA, US
Aaron Berke - Portland OR, US
Bryan L. Buckalew - Tualatin OR, US
Robert Rash - West Linn OR, US

C25D 5/08
C25D 17/00
C25D 7/12

Various embodiments herein relate to methods and apparatus for electroplating material onto a semiconductor substrate. The apparatus includes an ionically resistive element that separates the plating chamber into a cross flow manifold (above the ionically resistive element) and an ionically resistive element manifold (below the ionically resistive element). Electrolyte is delivered to the cross flow manifold, where it shears over the surface of the substrate, and to the ionically resistive element manifold, where it passes through through-holes in the ionically resistive element to impinge upon the substrate as it enters the cross flow manifold. In certain embodiments, the flow of electrolyte into the cross flow manifold (e.g., through a side inlet) and the flow of electrolyte into the ionically resistive element manifold are actively controlled, e.g., using a three-way valve. In these or other cases, the ionically resistive element may include electrolyte jets.

2019005, Feb 21, 2019

Aug 10, 2018

16/101291

- Fremont CA, US
Bryan L. Buckalew - Tualatin OR, US
Aaron Berke - Portland OR, US
James Isaac Fortner - Newberg OR, US
Justin Oberst - Beaverton OR, US
Steven T. Mayer - Aurora OR, US
Robert Rash - West Linn OR, US

C25D 17/00
C25D 7/12

Various embodiments described herein relate to methods and apparatus for electroplating material onto a semiconductor substrate. In some cases, one or more membrane may be provided in contact with an ionically resistive element to minimize the degree to which electrolyte passes backwards from a cross flow manifold, through the ionically resistive element, and into an ionically resistive element manifold during electroplating. The membrane may be designed to route electrolyte in a desired manner in some embodiments. In these or other cases, one or more baffles may be provided in the ionically resistive element manifold to reduce the degree to which electrolyte is able to bypass the cross flow manifold by flowing back through the ionically resistive element and across the electroplating cell within the ionically resistive element manifold. These techniques can be used to improve the uniformity of electroplating results.

2018031, Nov 1, 2018

May 4, 2018

15/971956

- Fremont CA, US
Lee Peng Chua - Beaverton OR, US
Steven T. Mayer - Aurora OR, US
Robert Rash - West Linn OR, US
Aaron Berke - Portland OR, US

C25D 17/00

An apparatus for electroplating metal on a semiconductor substrate with improved azimuthal uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; an ionically resistive ionically permeable element (“the element”) configured to be positioned proximate the substrate; and a shield configured for providing azimuthally asymmetrical shielding and positioned between the substrate holder and the element such that the closest distance between the substrate-facing surface of the shield and the working surface of the substrate is less than 2 mm. In some embodiments there is an electrolyte-filled gap between the substrate-facing surface of the element and the shield during electroplating. The substrate-facing surface of the shield may be contoured such that the distance from different positions of the shield to the substrate is varied.

2018028, Oct 4, 2018

Jun 1, 2018

15/995974

- Fremont CA, US
Bryan L. Buckalew - Tualatin OR, US
Lee Peng Chua - Beaverton OR, US
Aaron Berke - Portland OR, US
Robert Rash - West Linn OR, US
Steven T. Mayer - Aurora OR, US

H01L 21/02
C25D 17/00

An apparatus for electroplating metal on a semiconductor substrate with improved plating uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; and an ionically resistive ionically permeable element comprising a substantially planar substrate-facing surface and an opposing surface, wherein the element allows for flow of ionic current towards the substrate during electroplating, and wherein the element comprises a region having varied local resistivity. In one example the resistivity of the element is varied by varying the thickness of the element. In some embodiments the thickness of the element is gradually reduced in a radial direction from the edge of the element to the center of the element. The provided apparatus and methods are particularly useful for electroplating metal in WLP recessed features.

2018025, Sep 13, 2018

Mar 9, 2017

15/455011

- Fremont CA, US
Bryan L. Buckalew - Tualatin OR, US
Lee Peng Chua - Beaverton OR, US
Robert Rash - West Linn OR, US
James Isaac Fortner - Newberg OR, US
Aaron Berke - Portland OR, US

C25D 5/02
C25D 17/00
C25D 17/06
C25D 21/12

Methods and apparatus for electroplating substrates are described herein. In some cases, an ionically resistive element is positioned near the substrate, creating a cross flow manifold between the ionically resistive element and the substrate. During plating, fluid may enter the cross flow manifold upward through the channels in the ionically resistive element, and (optionally) laterally through a cross flow side inlet. The flow paths combine in the cross flow manifold and exit at the cross flow outlet, which may be positioned opposite the cross flow inlet. In some embodiments, the ionically resistive element may include two or more flow regions, where the flow through each flow region is independently controllable. In these or other embodiments, an electrolyte jet may be included to flow additional electrolyte toward the substrate at a particular radial location or locations during plating. In some embodiments, the ionically resistive element may be omitted.

2018025, Sep 6, 2018

Mar 1, 2017

15/446631

- Fremont CA, US
Aaron Berke - Portland OR, US
Santosh Kumar - Beaverton OR, US
Robert Rash - West Linn OR, US
Lee Peng Chua - Beaverton OR, US
Bryan Buckalew - Tualatin OR, US

LAM RESEARCH CORPORATION - Fremont CA

C25D 17/00
C25D 7/12

A lipseal is designed for use in a lipseal assembly of an electroplating apparatus wherein a clamshell engages and supplies electrical current to a semiconductor substrate during electroplating. The lipseal includes an elastomeric body having an outer portion configured to engage a cup of the lipseal assembly and an inner portion configured to engage a peripheral region of the semiconductor substrate. The inner portion includes a protrusion having a width in a radial direction sufficient to provide a contact area with the semiconductor substrate which inhibits diffusion of acid in an electroplating solution used during the electroplating. The protrusion is located at an inner periphery of the lipseal.