Aditya Deshpande resumes & CV records
Resumes
Aditya Deshpande
Aditya Deshpande
Aditya Deshpande
Aditya Deshpande
Aditya J Deshpande, Age 54309 Cheval Square Dr, Wildwood, MO 63005
Aditya Deshpande Phones & Addresses
309 Cheval Square Dr, Chesterfield, MO 63005 (636) 778-9242
8629 Kendall Dr, Plano, TX 75025 (972) 731-7872
2600 Ventura Dr, Plano, TX 75093 (972) 599-1522
801 Locust St, Albuquerque, NM 87102 (505) 765-1609
Saint Louis, MO
Colton, TX
5200 Noreen Dr NE, Albuquerque, NM 87111 (505) 770-8338
Work
Position:
Executive, Administrative, and Managerial Occupations
Education
Degree:
Associate degree or higher
Emails
Mentions for Aditya J Deshpande
Publications & IP owners
Us Patents
Coating Compositions
US Patent:
8580881, Nov 12, 2013
Filed:
May 16, 2012
Appl. No.:
13/473347
Inventors:
Richard J. Phillips - St. Peters MO, US
Steven L. Kimbel - St. Charles MO, US
Aditya J. Deshpande - Chesterfield MO, US
Gang Shi - O'Fallon MO, US
Steven L. Kimbel - St. Charles MO, US
Aditya J. Deshpande - Chesterfield MO, US
Gang Shi - O'Fallon MO, US
Assignee:
MEMC Singapore Pte. Ltd. - Singapore
International Classification:
C08K 3/34
US Classification:
524443, 428 98, 264332, 264219, 427230, 427236, 423348
Abstract:
Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.
Coated Crucibles And Methods For Applying A Coating To A Crucible
US Patent:
2011001, Jan 20, 2011
Filed:
Jul 16, 2010
Appl. No.:
12/837864
Inventors:
Richard J. Phillips - St. Peters MO, US
Steven L. Kimbel - St. Charles MO, US
Aditya J. Deshpande - Chesterfield MO, US
Gang Shi - O'Fallon MO, US
Steven L. Kimbel - St. Charles MO, US
Aditya J. Deshpande - Chesterfield MO, US
Gang Shi - O'Fallon MO, US
Assignee:
MEMC SINGAPORE PTE. LTD. (UEN200614794D) - Singapore
International Classification:
F27D 1/00
B05D 7/22
B05D 7/22
US Classification:
432247, 427230, 427236
Abstract:
Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.
Coating Compositions
US Patent:
2011001, Jan 20, 2011
Filed:
Jul 16, 2010
Appl. No.:
12/837873
Inventors:
Richard J. Phillips - St. Peters MO, US
Steven L. Kimbel - St. Charles MO, US
Aditya J. Deshpande - Chesterfield MO, US
Gang Shi - O'Fallon MO, US
Steven L. Kimbel - St. Charles MO, US
Aditya J. Deshpande - Chesterfield MO, US
Gang Shi - O'Fallon MO, US
Assignee:
MEMC SINGAPORE PTE. LTD. (UEN200614794D) - Singapore
International Classification:
C08K 3/34
US Classification:
524443
Abstract:
Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.
Silicon Wafers And Ingots With Reduced Oxygen Content And Methods For Producing Them
US Patent:
2011017, Jul 21, 2011
Filed:
Jul 16, 2010
Appl. No.:
12/837876
Inventors:
Richard J. Phillips - St. Peters MO, US
Steven L. Kimbel - St. Charles MO, US
Aditya J. Deshpande - Chesterfield MO, US
Gang Shi - O'Fallon MO, US
Steven L. Kimbel - St. Charles MO, US
Aditya J. Deshpande - Chesterfield MO, US
Gang Shi - O'Fallon MO, US
Assignee:
MEMC SINGAPORE PTE LTD. - Singapore
International Classification:
B32B 5/00
B22D 7/06
B22D 7/12
B22D 7/00
C01B 33/02
B22D 7/06
B22D 7/12
B22D 7/00
C01B 33/02
US Classification:
428 98, 264332, 264219, 423348
Abstract:
Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.
Crucible For Use In A Directional Solidification Furnace
US Patent:
2011018, Jul 28, 2011
Filed:
Jan 27, 2011
Appl. No.:
13/014932
Inventors:
Richard J. Phillips - St. Peters MO, US
Balaji Devulapalli - Chesterfield MO, US
Steven L. Kimbel - St. Charles MO, US
Aditya J. Deshpande - Chesterfield MO, US
Balaji Devulapalli - Chesterfield MO, US
Steven L. Kimbel - St. Charles MO, US
Aditya J. Deshpande - Chesterfield MO, US
Assignee:
MEMC SINGAPORE PTE. LTD. (UEN200614794D) - Singapore
International Classification:
B22D 27/04
B22C 9/00
B22C 9/00
US Classification:
1641221, 164271
Abstract:
A directional solidification furnace comprises a crucible assembly including a crucible for containing a melt having walls and a base with an opening therein, a crucible support for supporting the crucible, and a lid covering the crucible. A plate is received in the opening in the base. The plate has a higher thermal conductivity than that of the base. The base can include a composite having an additive such that the composite base has a higher thermal conductivity than a comparable without the additive.
Silicon Wafers And Ingots With Reduced Oxygen Content And Methods For Producing Them
US Patent:
2013002, Jan 31, 2013
Filed:
Oct 9, 2012
Appl. No.:
13/648065
Inventors:
MEMC Singapore Pte. Ltd. (UEN200614794D) - Singapore, SG
Steven L. Kimbel - St. Charles MO, US
Aditya J. Deshpande - Chesterfield MO, US
Gang Shi - O'Fallon MO, US
Steven L. Kimbel - St. Charles MO, US
Aditya J. Deshpande - Chesterfield MO, US
Gang Shi - O'Fallon MO, US
International Classification:
H01L 29/04
US Classification:
257 49, 257E29003
Abstract:
Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.
Crucibles For Holding Molten Material And Methods For Producing Them And For Their Use
US Patent:
2013019, Aug 1, 2013
Filed:
Jan 11, 2013
Appl. No.:
13/739849
Inventors:
MEMC Singapore Pte. Ltd. (UEN200614794D) - Singapore, SG
Shawn W. Hayes - Foristell MO, US
Aditya Deshpande - Chesterfield MO, US
Jaishankar Kasthuri - Chesterfield MO, US
Shawn W. Hayes - Foristell MO, US
Aditya Deshpande - Chesterfield MO, US
Jaishankar Kasthuri - Chesterfield MO, US
International Classification:
C30B 28/06
US Classification:
65 26, 65169, 427454, 427452, 65 24
Abstract:
Coated crucibles for holding molten material are disclosed. In some embodiments, the crucibles are used to prepare multicrystalline silicon ingots by a directional solidification process. Methods for preparing such crucibles and methods for preparing silicon ingots by use of such crucibles are also disclosed.
Method Of Preparing Cast Silicon By Directional Solidification
US Patent:
2013019, Aug 1, 2013
Filed:
Jan 27, 2012
Appl. No.:
13/360116
Inventors:
Jihong Chen - St. Charles MO, US
Aditya Deshpande - Chesterfield MO, US
Aditya Deshpande - Chesterfield MO, US
Assignee:
MEMC SINGAPORE PTE. LTD. (UEN200614794D) - Singapore
International Classification:
C30B 19/08
US Classification:
117 54
Abstract:
A method of preparing a silicon melt in a crucible for use in the manufacture of cast silicon, wherein the crucible comprises an opening, an opposing bottom surface, and at least one sidewall joining the opening and the bottom surface. The method comprises charging a silicon spacer to the bottom surface of the crucible; arranging a monocrystalline silicon seed crystal on the silicon spacer such that no surface of the monocrystalline silicon material is in contact with the bottom surface of the crucible; charging polycrystalline silicon feedstock to the crucible; and applying heat through at least one of the opening and the at least one sidewall in order to form a partially melted charge of silicon in the crucible.
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