Albert C Baca, Age 67Albuquerque, NM

6504859, Jan 7, 2003

Jan 21, 2000

09/489243

Fred J. Zutavern - Albuquerque NM
Guillermo M. Loubriel - Albuquerque NM
Malcolm T. Buttram - Sandia Park NM
Alan Mar - Albuquerque NM
Wesley D. Helgeson - Albuquerque NM
Martin W. OMalley - Edgewood NM
Harold P. Hjalmarson - Albuquerque NM
Albert G. Baca - Albuquerque NM
Weng W. Chow - Cedar Crest NM
G. Allen Vawter - Albuquerque NM

Sandia Corporation - Albuquerque NM

H01S 500

372 44

The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser.

6765242, Jul 20, 2004

Apr 11, 2000

09/547152

Ping-Chih Chang - Albuquerque NM
Albert G. Baca - Albuquerque NM
Hong Q. Hou - Albuquerque NM
Carol I. H. Ashby - Edgewood NM

Sandia Corporation - Albuquerque NM
Emcore Corporation - Somerset NJ

H01L 31072

257197, 257198, 257200, 257201

An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V , thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.

7137612, Nov 21, 2006

Sep 1, 2004

10/931512

Albert Baca - Long Beach CA, US

Whittaker Corporation - Simi Valley CA

F16K 47/00

251122

A high recovery metering valve includes an inlet, outlet and a plenum. An internal valve trim places the plenum in communication with the outlet. A valve poppet is moveably positioned within the internal valve trim. In one embodiment, the valve poppet includes a distal portion that is tapered. In another embodiment, the distal portion is characterized by a double radius. In some embodiments the inlet and the outlet are orientated about ninety degrees with respect to each other.

2002002, Feb 28, 2002

Aug 24, 2001

09/939165

Albert Baca - Placitas NM, US

B60R021/00

180/271000, 180/268000, 307/010100

A vehicle restraint release system and method comprising: providing a manual trigger; providing a vehicle motion sensor; providing a safety interlock connected to the manual trigger and the vehicle motion sensor; and causing activation of a plurality of restraint release devices when the manual trigger is engaged and the vehicle motion sensor signals that the vehicle is not in motion.

5804815, Sep 8, 1998

Jul 5, 1996

8/675975

Guillermo M. Loubriel - Sandia Park NM
Albert G. Baca - Albuquerque NM
Fred J. Zutavern - Albuquerque NM

Sandia Corporation - Albuquerque NM

H01J 4014

2502141

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

5814238, Sep 29, 1998

Oct 12, 1995

8/542149

Carol I. H. Ashby - Edgewood NM
Albert G. Baca - Albuquerque NM
Peter Esherick - Albuquerque NM
John E. Parmeter - Albuquerque NM
Dennis J. Rieger - Tijeras NM
Randy J. Shul - Albuquerque NM

Sandia Corporation - Albuquerque NM

B44C 122
C23F 100
C03C 1500

216 62

A method for dry etching of transition metals. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorous-containing. pi. -acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/. pi. -acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i. e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the. pi. -acceptor ligands directly from a ligand source gas (e. g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the. pi.

5479033, Dec 26, 1995

May 27, 1994

8/250088

Albert G. Baca - Albuquerque NM
Timothy J. Drummond - Albuquerque NM
Perry J. Robertson - Albuquerque NM
Thomas E. Zipperian - Albuquerque NM

Sandia Corporation - Albuquerque NM

H01L 310378
H01L 31072

257192

A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.

6083781, Jul 4, 2000

Oct 1, 1997

8/941264

John C. Zolper - Vienna VA
Marc E. Sherwin - Rockville MD
Albert G. Baca - Albuquerque NM

The United States of America as represented by the United States
Department of Energy - Washington DC

H01L 21338

438167

A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is formed and a single anneal at moderate temperature is then performed. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions co-implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region of the Si-channel tail, but does not contribute substantially to the acceptor concentration in the buried p region. As a result, the invention provides for improved field effect semiconductor and related devices with enhancement of both DC and high-frequency performance.