Allen C Huang, Age 4787 New Norwalk Rd, New Canaan, CT 06840

6380033, Apr 30, 2002

Sep 20, 1999

09/399414

Kent K. Chang - Cupertino CA
Allen U. Huang - San Jose CA

Advanced Micro Devices, Inc. - Sunnyvale CA

H01L 21336

438258, 438264, 438594, 438770

In one embodiment, the present invention relates to a method of forming a NAND type flash memory device capable of more than about 1Ã10 program/erase cycles without significant read disturb problems involving the steps of growing a first oxide layer over at least a portion of a substrate, the substrate including a flash memory cell area and a select gate area; removing a portion of the first oxide layer in the flash memory cell area of the substrate; growing a second oxide layer over at least a portion of the substrate in the flash memory cell area and over at least a portion of the a first oxide layer in the select gate area; annealing the first oxide layer and the second oxide layer under an inert gas and at least one of N O and NO for a period of time from about 1 minute to about 15 minutes; depositing a first in situ doped amorphous silicon layer over at least a portion of the second oxide layer; depositing a dielectric layer over at least a portion of the first in situ doped amorphous silicon layer; depositing a second doped amorphous silicon layer over at least a portion of the dielectric layer; and forming a flash memory cell in the flash memory cell area of the substrate and a select gate transistor in the select gate area substrate, the flash memory cell comprising the second oxide layer, the first in situ doped amorphous silicon layer, the dielectric layer, and the second doped amorphous silicon layer, and the select gate transistor comprising the first oxide layer, the second oxide layer, the first in situ doped amorphous silicon layer, the dielectric layer, and the second doped amorphous silicon layer.

6580639, Jun 17, 2003

Aug 10, 1999

09/372406

Kent Kuohua Chang - Cupertino CA
Allen U. Huang - San Jose CA

Advanced Micro Devices, Inc. - Sunnyvale CA

G11C 1604

36518517, 113 63, 11318533

The present invention makes use of ion bombardment to amorphize the source and drain regions of a short channel FET prior to implanting. The source/drain implants are then localized to a shallow depth by appropriate choice of implanting conditions, typically employing rather low bombardment voltages of approximately 10 KeV. Amorphous source/drain regions substantially hinder the diffusion of source/drain dopants and thereby reduce the possibility of punchthrough and loss of FET function. Such devices are preferably used in NAND type flash memory devices maintaining proper self-boosting voltages and FET functions even when short channel lengths are employed.

8407596, Mar 26, 2013

Apr 22, 2009

12/427919

Sandy Yu - Sunnyvale CA, US
Jeffrey Chao-Nan Chen - Mountain View CA, US
Allen Pin-Shiu Huang - Mountain View CA, US
Jason Xiaobo Zhao - San Jose CA, US
Mark Pearson - Renton WA, US

Microsoft Corporation - Redmond WA

G06F 3/00
G06F 17/00

715731, 715202, 715723, 715724, 715725, 715730, 715732

Media timeline interaction may be provided. An electronic presentation may comprise a media object. A user may select the media object within a presentation application and use an on-object user interface in conjunction with the application's user interface to modify the media object. The user may also display the modified media object within the presentation application.

2008005, Feb 28, 2008

Aug 10, 2006

11/502170

Jeffrey Liang - Menlo Park CA, US
Greg Kaine - Sunnyvale CA, US
Eric Debes - Santa Clara CA, US
Ramon C. Cancel - Hillsboro OR, US
Allen Huang - Beaverton OR, US
Patrick K. Leung - Hillsboro OR, US
Luis Vargas - Hillsboro OR, US

G06F 13/38

710 62

In one embodiment, a system comprises a portable computing device comprising a first graphics controller and a first communication interface, and a turbo station comprising a second communication interface to manage communication with the portable computing device, and at least one auxiliary computing component coupled to the communication interface and configured to process cooperatively with the first graphics controller in the portable computing device.

2011030, Dec 15, 2011

Jun 15, 2010

12/815404

Daniel Cheung - Mountain View CA, US
Allen Huang - Mountain View CA, US

Microsoft Corporation - Redmond WA

G06F 3/01
G06F 15/16

715731, 715733, 715751

A presentation state that includes a presentation and other information is synchronized between one or more client computers executing a presentation client application. A client computer executing the presentation client application receives the presentation state, including the presentation, and is assigned a role. The client computer then provides a user interface (“UI”) for viewing and interacting with the presentation that is based upon the assigned role. The role might be a projector role, a presenter role, an attendee role, a moderator role, a notetaker role, or another type of role. The UI might also be customized for the particular type of client computer that it is displayed upon.

6284602, Sep 4, 2001

Sep 20, 1999

9/399526

Kent K. Chang - Cupertino CA
Allen U. Huang - San Jose CA

Advanced Micro Devices, Inc. - Sunnyvale CA

H01L 218247

438258

In one embodiment, the present invention relates to a method of forming a NAND type flash memory device involving the steps of growing a first oxide layer over at least a portion of a substrate, the substrate including a flash memory cell area and a select gate area; removing a portion of the first oxide layer in the flash memory cell area of the substrate; growing a second oxide layer over at least a portion of the substrate in the flash memory cell area and over at least a portion of the a first oxide layer in the select gate area; annealing the first oxide layer and the second oxide layer under an inert gas and at least one of N. sub. 2 O and NO for a period of time from about 1 minute to about 15 minutes; depositing a first in situ doped amorphous silicon layer over at least a portion of the second oxide layer, the first in situ doped amorphous silicon layer having a thickness from about 400. ANG. to about 1,000. ANG. ; depositing a dielectric layer over at least a portion of the first in situ doped amorphous silicon layer; depositing a second doped amorphous silicon layer over at least a portion of the dielectric layer; and forming a flash memory cell in the flash memory cell area of the substrate and a select gate transistor in the select gate area substrate, the flash memory cell comprising the second oxide layer, the first in situ doped amorphous silicon layer, the dielectric layer, and the second doped amorphous silicon layer, and the select gate transistor comprising the first oxide layer, the second oxide layer, the first in situ doped amorphous silicon layer, the dielectric layer, and the second doped amorphous silicon layer.

2022041, Dec 29, 2022

Jun 28, 2021

17/359843

- Santa Monica CA, US
Kyle Dumo - Canoga Park CA, US
Allen Huang - Redondo Beach CA, US
Ngoan Nguyen - Huntington Beach CA, US
Bernardo Perez - Los Angeles CA, US
Aung Win Thein - Carson CA, US

G06T 15/00
G06T 19/00
G06F 3/0488

A methodology is described that provides access to an augmented reality (AR) component maintained by a messaging server system directly from a web view application. When a user activates, from a web view application executing in the messaging client, a user selectable element that references an AR component, a web view AR system obtains the identification of the AR component, performs validation of the identification and of any additional launch data, and launches a camera view user interface (UI) with the AR component loaded in the camera view UI. Content captured from the camera view UI can be shared to other computing devices.

2017036, Dec 21, 2017

Jun 30, 2017

15/639905

Mayur Datar - Mountain View CA, US
Allen Huang - Mountain View CA, US
Siavash Sedigh Nejad - Mountain View CA, US

Google Inc. - Mountain View CA

G06F 3/0484
G06F 17/30

A method of skinning an application with content includes receiving, by a client device from a content provider over a data network, a replacement asset associated with a tag specifying an event type, and displaying, by a graphical user interface of the client device, an initial asset of an application executed by the client device. The method further includes determining, by a hooking component of the client device, that an event corresponding to the event type occurred during execution of the application, and selecting, by the hooking component, the replacement asset associated with the tag specifying the event type, responsive to the determination that the event corresponding to the event type occurred. The method yet further includes replacing, by the client device, the initial asset with the selected replacement asset for display by the graphical user interface, responsive to the determination that the event corresponding to the event type occurred.