Andre Samuel Burgess, Age 72124 Shadeland Ave, Villas, NJ 08251

Andre Burgess Phones & Addresses

Villas, NJ

Suitland, MD

8503 Chervil Rd, Lanham, MD 20706 (301) 552-6631

Lanham Seabrook, MD

1701 24Th St NE, Washington, DC 20002

Forestville, MD

Silver Spring, MD

Dover, DE

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Work

Company: Sodexo 2013 Position: General manager

Education

School / High School: Troy State University- Troy, AL 1994 Specialities: Bachelor of Science in Management

Mentions for Andre Samuel Burgess

Andre Burgess resumes & CV records

Resumes

Andre Burgess Photo 35

Seeking Entry Level Employment

Location:
Suitland, MD
Andre Burgess Photo 36

Lot Manager

Location:
Suitland, MD
Work:
Oursiman Chevrolet
Lot Manager
Andre Burgess Photo 37

Andre Burgess

Andre Burgess Photo 38

Andre Burgess

Location:
United States
Andre Burgess Photo 39

Andre Burgess - Warner Robins, GA

Work:
SODEXO 2013 to 2000
General Manager
SODEXO - Fort Valley, GA 2009 to 2013
Operations Manager
SODEXO - Atlanta, GA 2006 to 2009
General Manager
SODEXO - Atlanta, GA 2003 to 2006
Dining Director
ARAMARK - Baltimore, MD 2001 to 2003
Assistant Food Service Director
LSG/SKY CHEFS - Washington, DC 1999 to 2001
Operations Supervisor
FLOWERS HOSPITAL - Dothan, AL 1998 to 1999
Assistant Director, Environmental Services
Food and Nutrition 1995 to 1998
Production Supervisor
Education:
Troy State University - Troy, AL 1994
Bachelor of Science in Management

Publications & IP owners

Us Patents

Method Of Fabricating An Imaging X-Ray Spectrometer

US Patent:
4618380, Oct 21, 1986
Filed:
Jun 18, 1985
Appl. No.:
6/745977
Inventors:
George E. Alcorn - Reston VA
Andre S. Burgess - Forestville MD
Assignee:
The United States of America as represented by the Administrator of the
National Aeronautics and Space Administration - Washington DC
International Classification:
H01L 21383
H01L 21385
US Classification:
148187
Abstract:
A process for fabricating an X-ray spectrometer having imaging and energy resolution of X-ray sources. The spectrometer has an array of adjoining rectangularly shaped detector cells formed in a silicon body. The walls of the cells are created by laser drilling holes completely through the silicon body and diffusing n. sup. + phosphorous doping material therethrough. A thermally migrated aluminum electrode is formed centrally through each of the cells.

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