Andrew C Kennedy, Age 503705 Ocean Dr, Vero Beach, FL 32963

4178528, Dec 11, 1979

Jul 5, 1978

5/922015

Andrew J. Kennedy - Lorton VA

The United States of America as represented by the Secretary of the Army - Washington DC

H01J 3902
H01J 3914

313102

A unitube that is used in intensified charge transfer devices (ICTDs) hav a semiconductor charge transfer device in proximity focus with the photocathode. The unitube is comprised of a tube base section having a centrally raised portion where the charge transfer device (CTD) is internally mounted directly thereon and of an external open space for the mounting of a thermoelectric (TE) cooler for cooling the semiconductor CTD. The CTD has a grounded metal shield overlapping its outer portion to avoid high voltage break down in the area between the high voltage photocathode and the CTD. The base may be brazed to one end of the image intensifier tube wall by a Kovar ring. The faceplate may be attached to the other end of the image intensifier by a blunt or knife edge type indium seal.

4178529, Dec 11, 1979

Jul 5, 1978

5/922017

Andrew J. Kennedy - Lorton VA

The United States of America as represented by the Secretary of the Army - Washington DC

H01J 3902
H01J 550

313102

A flip-header for mounting a charge transfer device, such as CCD, CTD, seonductor diode arrays and the like, thereon to a ceramic tube base of an image intensifier tube and variations of the basic tube configurations to accommodate proximity focus of the photocathode and the charge transfer device. The flip-header with the charge transfer devices mounted thereon are separately prebaked at a lower temperature than the other portions of the tube assembly, namely the tube base, tube body, and the faceplate. The flip-header is then set inside the tube.

4192064, Mar 11, 1980

Jul 5, 1978

5/922016

Andrew J. Kennedy - Lorton VA

The United States of America as represented by the Secretary of the Army - Washington DC

H01B 1900

29631

A high strength and serrated edge extended leakage path ceramic tube wall r high voltage tube device, such as a proximity focused image intensifier, and method of making same. The ceramic may be comprised of a ceramic particle slurry made of high density alumina in a glass binder wherein the slurry is ultrasonically compacted against ultrasmooth mold walls in the uncured state. The mold may be formed by using a highly polished preshaped, positive, made of a metal such as brass, and then removing the positive. The mold may be further processed by electrodepositing a metal, such as nickel or nickel alloys, onto the positive to produce an ultrasmooth surface. The mold may be made of a vinyl polymer type thermoplastic. The inside of the mold takes up the smooth surface characteristics of the positive that is, in turn, transferred to the uncured ceramic when sufficiently pressed and compacted by the ultrasonically compacting step. The uncured ceramic is then pre-baked at about 350. degree. C.