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Angus A Rockett, Age 6715927 W Ellsworth Ln, Golden, CO 80401

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Known as:
Angus Alexander Rockett Angus E Rockett Angus A Robert Nathanael Rockett
Related to:
Ellen A Rockett 36

Angus Rockett Phones & Addresses

Golden, CO

Urbana, IL

505 Park Haven Ct, Champaign, IL 61820 (217) 398-6561

20713 Crystal Hill Cir, Germantown, MD 20874 (301) 916-9643

Golden, CO

Harvey, LA

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Angus A Rockett

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Work

Company: University of illinois at urbana-champaign Jan 1987 Position: Professor

Education

Degree: Ph.D. School / High School: University of Illinois at Urbana-Champaign 1980 to 1986 Specialities: Materials Science and Engineering

Skills

Materials Science • Thin Films • Nanomaterials • Characterization • Nanotechnology • Afm • Semiconductors • Powder X Ray Diffraction • Cigs • Science • Physics • Spectroscopy

Industries

Research

Mentions for Angus A Rockett

Angus Rockett resumes & CV records

Resumes

Angus Rockett Photo 3

Professor

Location:
Urbana, IL
Industry:
Research
Work:
University of Illinois at Urbana-Champaign since Jan 1987
Professor University of Illinois since 1987
Professor Uppsala University 1994 - 1995
Visiting scholar
Education:
University of Illinois at Urbana-Champaign 1980 - 1986
Ph.D., Materials Science and Engineering Brown University 1976 - 1980
Sc.B., Physics
Skills:
Materials Science, Thin Films, Nanomaterials, Characterization, Nanotechnology, Afm, Semiconductors, Powder X Ray Diffraction, Cigs, Science, Physics, Spectroscopy

Publications & IP owners

Us Patents

Arrays Of Ultrathin Silicon Solar Microcells

US Patent:
2011027, Nov 17, 2011
Filed:
Sep 24, 2009
Appl. No.:
13/120486
Inventors:
John A. Rogers - Champaign IL, US
Angus A. Rockett - Urbana IL, US
Ralph Nuzzo - Champaign IL, US
Jongseung Yoon - Los Angeles CA, US
Alfred Baca - Urbana IL, US
International Classification:
H01L 31/042
H01L 31/02
H01L 31/0264
US Classification:
136244, 136261, 438 57, 438 80, 257E3111
Abstract:
Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 μm and, for example, is made from low grade Si.

Hybrid Method For Depositing Semi-Conductive Materials

US Patent:
5439575, Aug 8, 1995
Filed:
Jun 30, 1988
Appl. No.:
7/213698
Inventors:
John A. Thornton - late of Champaign IL
Timothy Lommasson - Champaign IL
Angus Rockett - Champaign IL
Assignee:
Board of Trustees of the University of Illinois - Champaign IL
International Classification:
C23C 1434
US Classification:
20419225
Abstract:
The invention provides a method and apparatus for depositing alloy films useful in manufacturing photovoltaic solar cells. In the preferred embodiment an alloy comprising copper, indium, and selenium is deposited on a substrate. Sputtering is utilized to provide the copper and indium, with the selenium being provided by evaporization. Other alloys may also be formed using the disclosed apparatus and techniques.

Multi-Phase Back Contacts For Cis Solar Cells

US Patent:
5477088, Dec 19, 1995
Filed:
May 12, 1993
Appl. No.:
8/060284
Inventors:
Angus A. Rockett - Champaign IL
Li-Chung Yang - Urbana IL
International Classification:
H01L 2348
H01L 2946
H01L 2962
H01L 2964
US Classification:
257764
Abstract:
Multi-phase, single layer, non-interdiffusing M-Mo back contact metallized films, where M is selected from Cu, Ga, or mixtures thereof, for CIS cells are deposited by a sputtering process on suitable substrates, preferably glass or alumina, to prevent delamination of the CIS from the back contact layer. Typical CIS compositions include CuXSe. sub. 2 where X is In or/and Ga. The multi-phase mixture is deposited on the substrate in a manner to provide a columnar microstructure, with micro-vein Cu or/and Ga regions which partially or fully vertically penetrate the entire back contact layer. The CIS semiconductor layer is then deposited by hybrid sputtering and evaporation process. The Cu/Ga-Mo deposition is controlled to produce the single layer two-phase columnar morphology with controllable Cu or Ga vein size less than about 0. 01 microns in width. During the subsequent deposition of the CIS layer, the columnar Cu/Ga regions within the molybdenum of the Cu/Ga-Mo back layer tend to partially leach out, and are replaced by columns of CIS.

Hexagonal Phase Epitaxial Cadmium Sulfide On Copper Indium Gallium Selenide For A Photovoltaic Junction

US Patent:
2019025, Aug 22, 2019
Filed:
Apr 30, 2019
Appl. No.:
16/398573
Inventors:
- BEIJING, CN
- LIVERMORE CA, US
- Urbana IL, US
John F. Corson - Mountain View CA, US
Xiaoqing He - Champaign IL, US
Angus Rockett - Champaign IL, US
Joel Varley - San Francisco CA, US
Vincenzo Lordi - San Francisco CA, US
International Classification:
H01L 31/0749
H01L 21/02
H01L 31/18
H01L 31/036
H01L 31/0296
Abstract:
A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.

Hexagonal Phase Epitaxial Cadmium Sulfide On Copper Indium Gallium Selenide For A Photovoltaic Junction

US Patent:
2016033, Nov 17, 2016
Filed:
May 12, 2016
Appl. No.:
15/153478
Inventors:
- Beijing, CN
- Urbana IL, US
Weijie Zhang - San Jose CA, US
John F. Corson - Mountain View CA, US
Xiaoqing He - Champaign IL, US
Angus Rockett - Champaign IL, US
Joel Varley - San Francisco CA, US
Vincenzo Lordi - San Francisco CA, US
International Classification:
H01L 31/0749
H01L 31/0224
H01L 31/18
H01L 31/068
Abstract:
A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.

Arrays Of Ultrathin Silicon Solar Microcells

US Patent:
2014021, Aug 7, 2014
Filed:
Feb 5, 2014
Appl. No.:
14/173525
Inventors:
John A. ROGERS - Champaign IL, US
Angus A. ROCKETT - Urbana IL, US
Ralph NUZZO - Champaign IL, US
Jongseung YOON - Urbana IL, US
Alfred BACA - Urbana IL, US
International Classification:
H01L 31/05
H01L 31/048
H01L 31/028
US Classification:
136249, 136261, 136251
Abstract:
Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 μm and, for example, is made from low grade Si.

Isbn (Books And Publications)

The Materials Science Of Semiconductors

Author:
Angus Rockett
ISBN #:
0387256539

Possible Relatives

Diane Rockett  Gene Rockett  Jack Rockett  Janice W Rockett  Jason N Rockett  Karen Rockett  Michelle C Rockett  Angus K Johnson  Angus V Jones  Angus I Steele 

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