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Anirban Das, Age 661221 E Kael St, Mesa, AZ 85203

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Known as:
Ariban Das Jhunu Das Das Anirban N Das

Anirban Das Phones & Addresses

Mesa, AZ

Phoenix, AZ

8739 Sharon Dr, Scottsdale, AZ 85260 (480) 315-8269

1075 Miller Rd, Scottsdale, AZ 85257 (480) 947-4147

Tempe, AZ

Maricopa, AZ

New York, NY

8739 E Sharon Dr, Scottsdale, AZ 85260 (480) 363-0527

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Education

Degree: Graduate or professional degree

Emails

a***[email protected]

Mentions for Anirban Das

Career records & work history

Medicine Doctors

Anirban Das

Specialties:
Family Medicine
Work:
Skagit Regional Clinic
1400 E Kincaid St, Mount Vernon, WA 98274
(360) 814-6565 (phone) (360) 814-6380 (fax)
Education:
Medical School
Philadelphia College of Osteopathic Medicine
Graduated: 2005
Procedures:
Arthrocentesis, Destruction of Benign/Premalignant Skin Lesions, Electrocardiogram (EKG or ECG), Osteopathic Manipulative Treatment, Pulmonary Function Tests, Skin Tags Removal, Vaccine Administration
Conditions:
Abnormal Vaginal Bleeding, Acute Bronchitis, Acute Pharyngitis, Acute Sinusitis, Bronchial Asthma, Candidiasis, Chronic Sinusitis, Constipation, Depressive Disorders, Fractures, Dislocations, Derangement, and Sprains, Hearing Loss, Herpes Simplex, Otitis Media, Pneumonia, Skin and Subcutaneous Infections, Urinary Tract Infection (UT), Abdominal Hernia, Acne, Acute Conjunctivitis, Acute Pancreatitis, Acute Upper Respiratory Tract Infections, Allergic Rhinitis, Alopecia Areata, Anal Fissure, Anemia, Angina Pectoris, Ankylosing Spondylitis (AS), Anxiety Dissociative and Somatoform Disorders, Anxiety Phobic Disorders, Aortic Valvular Disease, Appendicitis, Arterial Thromboembolic Disease, Atopic Dermatitis, Atrial Fibrillation and Atrial Flutter, Autism, Benign Paroxysmal Positional Vertigo, Benign Prostatic Hypertrophy, Benign Thyroid Diseases, Bipolar Disorder, Breast Disorders, Burns, Calculus of the Urinary System, Candidiasis of Vulva and Vagina, Cardiac Arrhythmia, Cataract, Chickenpox, Cholelethiasis or Cholecystitis, Chronic Bronchitis, Chronic Renal Disease, Cirrhosis, Conduction Disorders, Congenital Anomalies of the Heart, Contact Dermatitis, Croup, Dehydration, Dermatitis, Diabetes Mellitus (DM), Diabetic Peripheral Neuropathy, Disorders of Lipoid Metabolism, Diverticulitis, Diverticulosis, Eating Disorders, Emphysema, Epilepsy, Erectile Dysfunction (ED), Gastritis and Duodenitis, Gastroesophageal Reflux Disease (GERD), Gastrointestinal Hemorrhage, Gingival and Periodontal Diseases, Gonorrhea, Gout, Heart Failure, Hemorrhoids, Herpes Genitalis, Herpes Zoster, Hypertension (HTN), Hyperthyroidism, Hypothyroidism, Infectious Liver Disease, Infectious Mononucleosis, Inflammatory Bowel Disease (IBD), Inguinal Hernia, Internal Derangement of Knee, Internal Derangement of Knee Cartilage, Intervertebral Disc Degeneration, Irritable Bowel Syndrome (IBS), Ischemic Stroke, Labyrinthitis, Lateral Epicondylitis, Lyme Disease, Menopausal and Postmenopausal Disorders, Migraine Headache, Mitral Valvular Disease, Myasthenia Gravis (MG), Obstructive Sleep Apnea, Osteoarthritis, Overweight and Obesity, Peripheral Nerve Disorders, Pertussis, Phlebitis and Thrombophlebitis, Plantar Fascitis, Plantar Warts, Post Traumatic Stress Disorder (PTSD), Prostatitis, Psoriasis, Pulmonary Embolism, Restless Leg Syndrome, Rheumatoid Arthritis, Rosacea, Rotator Cuff Syndrome and Allied Disorders, Rubella or Measles, Sciatica, Scoliosis or Kyphoscoliosis, Sexually Transmitted Diseases (STDs), Substance Abuse and/or Dependency, Systemic Lupus Erythematosus, Tempromandibular Joint Disorders (TMJ), Tension Headache, Tinea Pedis, Tinea Unguium, Transient Cerebral Ischemia, Urinary Incontinence, Venous Embolism and Thrombosis, Ventral Hernia
Languages:
English
Description:
Dr. Das graduated from the Philadelphia College of Osteopathic Medicine in 2005. He works in Mount Vernon, WA and specializes in Family Medicine. Dr. Das is affiliated with Island Hospital and Skagit Valley Hospital.

Anirban Das resumes & CV records

Resumes

Anirban Das Photo 41

Kdi,Katwa,Burdwan

Work:
United States
Kdi,Katwa,Burdwan
Anirban Das Photo 42

Chief Information Officer

Location:
Phoenix, AZ
Industry:
Computer Software
Work:
Ex3
Chief Information Officer
Anirban Das Photo 43

Anirban Das

Anirban Das Photo 44

Anirban Das

Anirban Das Photo 45

Anirban Das

Anirban Das Photo 46

Anirban Das

Location:
United States
Anirban Das Photo 47

Anirban Das - Fremont, CA

Work:
Oryx Advanced Materials May 2010 to 2000
Product Manager Heraeus Inc. Materials Technology Division - Chandler, AZ Jan 2005 to May 2010
Customer Program Manager/Applications Manager Heraeus Inc. Materials Technology Division Jul 2008 to Jul 2009
Device Characterization Scientist Arizona State University Aug 2001 to Dec 2004
Graduate Research Assistant
Education:
Arizona State University 2005
Ph.D. in Engineering Science Indian Institute of Science - Bangalore, Karnataka 2001
M.Sc in Materials Science College of Ceramic Technology, University of Calcutta - Kolkata, West Bengal 1999
B.Sc
Anirban Das Photo 48

Anirban Das - Fremont, CA

Work:
Oryx Advanced Materials May 2010 to 2000
Product Manager Heraeus Inc. Materials Technology Division - Chandler, AZ Jan 2005 to May 2010
Customer Program Manager/Applications Account Manager
Education:
Arizona State University 2005
Ph.D. in Engineering Science Indian Institute of Science - Bangalore, Karnataka 2001
M.Sc in Materials Science College of Ceramic Technology, University of Calcutta - Kolkata, West Bengal 1999
B.Sc in Ceramic Engg

Publications & IP owners

Us Patents

Enhanced Oxide-Containing Sputter Target Alloy Compositions

US Patent:
2006028, Dec 21, 2006
Filed:
Jun 15, 2005
Appl. No.:
11/152104
Inventors:
Michael Racine - Phoenix AZ, US
Anirban Das - Tempe AZ, US
Steven Kennedy - Chandler AZ, US
Kyung Chung - Phoenix AZ, US
International Classification:
G11B 5/65
C23C 14/00
C23C 14/32
US Classification:
428836200, 204192200, 204298130, 428836300
Abstract:
A sputter target, where the sputter target is comprised of cobalt (Co), platinum (Pt), a single-component oxide or a multi-component oxide, and an elemental metal additive. The elemental metal additive has a reduction potential of greater than −0.03 electron volts, and is substantially insoluble with cobalt (Co) at room temperature. The elemental metal additive is copper (Cu), silver (Ag), or gold (Au), and the sputter target is further comprised of chromium (Cr) and/or boron (B). The sputter target is comprised of between 2 atomic % and 10 atomic % copper (Cu), silver (Ag), or gold (Au) or other elemental metal additive. Accordingly, the enhanced sputter target provides significant improvements in thermal stability and SNR, through enhancements to magnetocrystalline anisotropy and increased grain-to-grain segregation.

Enhanced Oxygen Non-Stoichiometry Compensation For Thin Films

US Patent:
2006028, Dec 28, 2006
Filed:
Jun 24, 2005
Appl. No.:
11/165663
Inventors:
Michael Racine - Phoenix AZ, US
Anirban Das - Tempe AZ, US
Steven Kennedy - Chandler AZ, US
Yuanda Cheng - Phoenix AZ, US
Assignee:
Heraeus, Inc. - Chandler AZ
International Classification:
C23C 14/00
US Classification:
204192200
Abstract:
A method of manufacturing a magnetic recording medium, including the step of reactively or non-reactively sputtering at least a first data storing thin film layer over a substrate from a sputter target. The sputter target is comprised of cobalt (Co), platinum (Pt), a first metal oxide further comprised of a first metal and oxygen (O) and, when non-reactively sputtering, a second metal oxide. The first data storing thin film layer is comprised of cobalt (Co), platinum (Pt), and a stoichiometric third metal oxide comprising the first metal and oxygen (O). During sputtering, any non-stoichiometry of the third metal oxide in the first data storing thin film layer is compensated for using oxygen (O) from the second metal oxide in the sputter target, or using oxygen (O) from the oxygen-rich gas atmosphere. The first metal is selected from boron (B), silicon (Si), aluminum (Al), tantalum (Ta), niobium (Nb), hafnium (Hf), zirconium (Zr), titanium (Ti), tin (Sn), lanthanum (La), tungsten (W), cobalt (Co), yttrium (Y), chromium (Cr), cerium (Ce), europium (Eu), gadolinium (Gd), vanadium (V), samarium (Sm), praseodymium (Pr), manganese (Mn), iridium (Ir), rhenium (Re), nickel (Ni), and zinc (Zn). The sputter target is further comprised of chromium (Cr) and/or boron (B).

Deposition Of Enhanced Seed Layer Using Tantalum Alloy Based Sputter Target

US Patent:
2007009, May 3, 2007
Filed:
Nov 2, 2005
Appl. No.:
11/264137
Inventors:
Anirban Das - Tempe AZ, US
Michael Racine - Phoenix AZ, US
Assignee:
HERAEUS, INC., a corporation of the State of Arizona - Chandler AZ
International Classification:
G11B 5/66
C23C 14/00
C23C 14/32
US Classification:
428831200, 204192200, 204298130
Abstract:
A seedlayer for a magnetic recording medium, the seedlayer formed over a substrate from a sputter target comprised of tantalum (Ta) and an alloying element. The solubility of the alloying element in a body centered cubic tantalum (Ta) phase does not exceed 10 atomic percent at room temperature, and the alloying element has a mass susceptibility of less than or equal to where possible alloying elements include (but are not limited to) boron (B), carbon (C), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), manganese (Mn), chromium (Cr), zirconium (Zr), niobium (Nb), molybdenum (Mo), ytterbium (Yb), lutetium (Lu), hafnium (Hf), bismuth (Bi), and tungsten (W). Alternatively, the alloying element is soluble in tantalum (Ta) at room temperature or at elevated temperatures, has a mass susceptibility of less than or equal to and has an atomic radius smaller than 1.47 Å, where possible alloying elements include (but are not limited to) boron (B), carbon (C), aluminum (Al), silicon (Si), chromium (Cr), ruthenium (Ru), rhodium (Rh), rhenium (Re), iridium (Ir) and platinum (Pt). Further alternatively, the solubility of the alloying element in a body centered cubic tantalum (Ta) phase does not exceed 10 atomic percent at room temperature, and the alloying element has a mass susceptibility of less than or equal to is soluble in tantalum (Ta) at temperatures higher than room temperature, and has an atomic radius smaller than 1.47 Å, where possible elements include (but are not limited to boron (B), carbon (C), aluminum (Al), silicon(Si), platinum (Pt), and chromium (Cr).

Magnetic Sputter Targets Manufactured Using Directional Solidification

US Patent:
2007016, Jul 26, 2007
Filed:
Jan 23, 2006
Appl. No.:
11/336980
Inventors:
Bernd Kunkel - Phoenix AZ, US
David Long - Chandler AZ, US
Abdelouahab Ziani - Chandler AZ, US
Anirban Das - Tempe AZ, US
Jun Hui - Maricopa AZ, US
Assignee:
Heraeus, Inc. - Chandler AZ
International Classification:
C22C 19/07
US Classification:
148425000, 420435000
Abstract:
A sputter target includes a metal alloy having a target surface, a rear surface and a thickness between the target and rear surfaces. The target surface and rear surface are outer surfaces of the metal alloy. The metal alloy has a thickness direction substantially along the thickness. The target surface is substantially normal to the thickness direction. The metal alloy has a single substantially homogenous microstructural zone across substantially the entire thickness. The metal alloy further includes dendrites. The dendrites at the target surface are oriented along substantially one direction, and the dendrites at a center plane of the metal alloy are oriented along substantially the same one direction. A sputter target may include a metal alloy which is a cobalt (Co) based, and may have a [0001] hexagonal close-packing (HCP) direction oriented substantially normal to the target surface. The sputter target may be formed by directional solidification at near-equilibrium temperature conditions by withdrawing the metal alloy at a first rate through a temperature gradient. The sputter target is for forming one or more magnetic layers on a substrate for, among other purposes, data storage.

Ruthenium Alloy Magnetic Media And Sputter Targets

US Patent:
2007019, Aug 16, 2007
Filed:
Feb 14, 2006
Appl. No.:
11/353141
Inventors:
Anirban Das - Tempe AZ, US
Michael Racine - Phoenix AZ, US
International Classification:
G11B 5/66
C23C 14/00
US Classification:
428832000, 204298130
Abstract:
A magnetic recording medium having an underlayer comprised of ruthenium (Ru) and an alloying element is provided. The alloying element may be for refining grain size, when it has little or no solid solubility in HCP phase Ru and is present in an amount in excess of that solubility. The alloying element may be for reducing lattice misfit, where it has some solid solubility in HCP phase Ru and is present in an amount not exceeding that solubility. The alloying element may be for both refining grain size and reducing lattice misfit, where it has some solid solubility in HCP phase Ru and is present in an amount in excess of that solubility. The underlayer may alternately include ruthenium and two alloying elements, one for refining grain size, the other for reducing lattice misfit. A sputter target comprising ruthenium and an alloying element is also provided.

Soft Magnetic Underlayer In Magnetic Media And Soft Magnetic Alloy Based Sputter Target

US Patent:
2007025, Nov 1, 2007
Filed:
Apr 27, 2006
Appl. No.:
11/411813
Inventors:
Michael Racine - Phoenix AZ, US
Anirban Das - Tempe AZ, US
Steven Kennedy - Chandler AZ, US
Assignee:
Heraeus, Inc. - Chandler AZ
International Classification:
G11B 5/127
G11B 5/74
G11B 5/66
C23C 14/00
US Classification:
360125000, 428813000, 428827000, 428829000, 360131000, 204192200
Abstract:
A magnetic recording medium that includes a substrate, an underlayer deposited above the substrate, the underlayer comprised of a magnetically soft alloy containing at least one soft ferromagnetic element and at least one corrosion inhibitor element that is selected from the group consisting of chromium (Cr), tungsten (W), molybdenum (Mo), carbon (C), copper (Cu), nickel (Ni), manganese (Mn), nitrogen (N), titanium (Ti), niobium (Nb), silicon (Si), tantalum (Ta), and aluminum (Al), and a magnetic data recording layer deposited above the underlayer. A sputter target comprised of the magnetically soft alloy is also provided, and the magnetically soft alloy is also used in soft magnetic layers on magnetic recording heads.

Alloy And Architecture Design For Heat-Assisted Magnetic Recording

US Patent:
2008002, Jan 31, 2008
Filed:
Nov 22, 2006
Appl. No.:
11/602953
Inventors:
Anirban Das - Chandler AZ, US
Michael G. Racine - Phoenix AZ, US
Assignee:
Heraeus, Inc. - Chandler AZ
International Classification:
G11B 5/66
US Classification:
4288312, 4288231, 428824
Abstract:
A magnetic recording medium for heat-assisted magnetic recording includes a magnetic data storage layer having magnetic grains separated by grain boundary phases. The grain boundary phases have a higher thermal conductivity than a thermal conductivity of the magnetic grains. The magnetic recording medium further includes a heat sink layer and one or more intermediate layers disposed between the magnetic data storage layer and the heat sink layer. Each of the one or more intermediate layers has crystalline phase grains separated by grain boundary phases. The grain boundary phases have a higher thermal conductivity than a thermal conductivity of the crystalline phase grains. The grain boundary phases in both the magnetic data storage layer and the intermediate layers provide high thermal conductivity conduits for dissipating heat from the magnetic data storage layer to the heatsink layer.

Magnetic Media And Sputter Targets With Compositions Of High Anisotropy Alloys And Oxide Compounds

US Patent:
2008005, Mar 6, 2008
Filed:
Sep 1, 2006
Appl. No.:
11/514175
Inventors:
Anirban Das - Chandler AZ, US
Michael Gene Racine - Phoenix AZ, US
Steven Roger Kennedy - Chandler AZ, US
Assignee:
Heraeus, Inc. - Chandler AZ
International Classification:
G11B 5/65
US Classification:
4288362
Abstract:
A magnetic data storage layer includes a high-Kalloy and an oxide compound of oxygen and either a single element or an alloy. Because of their high K, the magnetic domains of this magnetic data storage layer can be made significantly smaller, while maintaining an acceptable thermal stability ratio of about 50 to 70, to provide areal densities of greater than 200 Gb/in. Sputter targets for sputtering such a magnetic data storage layer are also provided. The sputter targets include the high-Ku alloy and either the desired oxide compounds, or the elements to be oxidized in a reactive sputtering process. The high-Kalloy has an anisotropy constant of at least 0.5×10ergs/cm.

Possible Relatives

Debashis Das  Debashish Das  Debasish Das  Debjani Das  Deepak K Das  Deepti Das  Dilip K Das  Anirban S Pal  Anirban Bose  Anirban Banerjee 

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