Antoine J Kahn, Age 7323 University Pl, Princeton, NJ 08540

2007029, Dec 27, 2007

Jun 22, 2007

11/766904

Antoine Kahn - Princeton NJ, US
Calvin Chan - South Brunswick NJ, US
Stephen Barlow - Atlanta GA, US
Seth Marder - Atlanta GA, US

H01B 1/12

252500000

Electron transport material and methods of N-type doping the same are provided.

2011026, Nov 3, 2011

Apr 26, 2011

13/094608

Wei ZHAO - Gainesville FL, US
Yabing QI - Plainsboro NJ, US
Antoine KAHN - Princeton NJ, US
Seth MARDER - Atlanta GA, US
Stephen BARLOW - Atlanta GA, US

THE TRUSTEES OF PRINCETON UNIVERSITY - Princeton NJ
GEORGIA TECH RESEARCH CORPORATION - Atlanta GA

H01L 51/30

257 40, 257E51005

Organic electronic devices comprising “remotely” doped materials comprising a combination of at least three layers. Such devices can include “remotely p-doped” structures comprising: a channel layer comprising at least one organic semiconductor channel material; a dopant layer, which comprises at least one p-dopant material and optionally at least one organic hole transport material; and a spacer layer disposed between and in electrical contact with both the channel layer and the dopant layer, comprising an organic semiconducting spacer material; or alternatively can include “remotely n-doped” structures comprising a combination of at least three layers: a channel layer comprising at least one organic semiconductor channel material; a dopant layer which comprises at least one organic electron transport material doped with an n-dopant material; and a spacer layer disposed between and in electrical contact with the channel layer and the dopant layer, comprising an organic semiconducting spacer material. Such devices include “remotely doped” field effect transistors comprising the doped structures described above.

2014023, Aug 21, 2014

Nov 27, 2013

14/092523

- Princeton NJ, US
- Atlanta GA, US
Antoine KAHN - Princeton NJ, US
Seth R. MARDER - Atlanta GA, US
Stephen BARLOW - Atlanta GA, US

The Trustees of Princeton University - Princeton NJ
Georgia Tech Research Corporation - Atlanta GA

H01L 51/00
H01L 51/05

257 40, 438 99

Organic electronic devices comprising “remotely” doped materials comprising a combination of at least three layers. Such devices can include “remotely p-doped” structures comprising: a channel layer comprising at least one organic semiconductor channel material; a dopant layer, which comprises at least one p-dopant material and optionally at least one organic hole transport material; and a spacer layer disposed between and in electrical contact with both the channel layer and the dopant layer, comprising an organic semiconducting spacer material; or alternatively can include “remotely n-doped” structures comprising a combination of at least three layers: a channel layer comprising at least one organic semiconductor channel material; a dopant layer which comprises at least one organic electron transport material doped with an n-dopant material; and a spacer layer disposed between and in electrical contact with the channel layer and the dopant layer, comprising an organic semiconducting spacer material. Such devices include “remotely doped” field effect transistors comprising the doped structures described above.

2014013, May 15, 2014

May 16, 2012

14/117965

Bernard Kippelen - Decatur GA, US
Canek Fuentes-Hernandez - Atlanta GA, US
Yinhua Zhou - Atlanta GA, US
Antoine Kahn - Princeton NJ, US
Jens Meyer - Princeton NJ, US
Jae Won Shim - Atlanta GA, US
Seth R. Marder - Atlanta GA, US

PRINCETON UNIVERSITY - Princeton NJ
GEORGIA TECH RESEARCH CORPORATION - Atlanta GA

H01L 29/45
H01L 21/283

257741, 438652

According to an exemplary embodiment of the invention, systems and methods are provided for producing low work function electrodes. According to an exemplary embodiment, a method is provided for reducing a work function of an electrode. The method includes applying, to at least a portion of the electrode, a solution comprising a Lewis basic oligomer or polymer; and based at least in part on applying the solution, forming an ultra-thin layer on a surface of the electrode, wherein the ultra-thin layer reduces the work function associated with the electrode by greater than 0.5 eV. According to another exemplary embodiment of the invention, a device is provided. The device includes a semiconductor; at least one electrode disposed adjacent to the semiconductor and configured to transport electrons in or out of the semiconductor.