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Antonio S Ciccarelli Deceased86 Barney Ln, Rochester, NY 14606

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Antonio Ciccarelli Phones & Addresses

86 Barney Ln, Rochester, NY 14606 (585) 426-2689

West Palm Bch, FL

Palm Beach, FL

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Antonio S Ciccarelli

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Work

Company: On semiconductor Feb 2017 Position: Marketing director

Education

Degree: Bachelors, Bachelor of Science In Electrical Engineering School / High School: Rochester Institute of Technology Specialities: Electrical Engineering

Skills

Semiconductors • Image Sensors • Sensors • Product Development • Product Management • Electronics • Ccd • Cmos • Product Marketing • Digital Imaging • Cross Functional Team Leadership • Microelectronics • Manufacturing • Design of Experiments • Ic • Semiconductor Industry • Mixed Signal • Commercialization • Product Lifecycle Management • Silicon • Analog • Analog Circuit Design • Mems • R&D

Industries

Semiconductors

Mentions for Antonio S Ciccarelli

Antonio Ciccarelli resumes & CV records

Resumes

Antonio Ciccarelli Photo 24

Marketing Director

Location:
Rochester, NY
Industry:
Semiconductors
Work:
On Semiconductor
Marketing Director Truesense Imaging, Inc. Apr 2007 - Apr 2014
Director, Worldwide Marketing Eastman Kodak Feb 2005 - Apr 2007
Product Line Manager, Ccd Image Sensors Eastman Kodak Mar 2004 - Feb 2005
Business Integration Manager Eastman Kodak Mar 2000 - Aug 2004
Development Project Manager Eastman Kodak Jun 1991 - Mar 2000
Lead Product Development Engineer
Education:
Rochester Institute of Technology
Bachelors, Bachelor of Science In Electrical Engineering, Electrical Engineering Rochester Institute of Technology
Masters, Master of Science In Electrical Engineering, Physics
Skills:
Semiconductors, Image Sensors, Sensors, Product Development, Product Management, Electronics, Ccd, Cmos, Product Marketing, Digital Imaging, Cross Functional Team Leadership, Microelectronics, Manufacturing, Design of Experiments, Ic, Semiconductor Industry, Mixed Signal, Commercialization, Product Lifecycle Management, Silicon, Analog, Analog Circuit Design, Mems, R&D

Publications & IP owners

Us Patents

Active Pixel Sensor With Shared Row Timing Signals

US Patent:
6466266, Oct 15, 2002
Filed:
Jul 28, 1998
Appl. No.:
09/124206
Inventors:
Robert M. Guidash - Rush NY
Antonio S. Ciccarelli - Rochester NY
Assignee:
Eastman Kodak Company - Rochester NY
International Classification:
H04N 5335
US Classification:
348308, 348302
Abstract:
An Active Pixel Sensor with increased sensitivity by employing an improved buss structure reducing the number of signal lines used within the sensor and approaching the sensitivity of a CCD device while still retaining the advantages of an APS device. Fill factor and sensitivity of an APS device is increased by sharing signal busses between rows that are currently being read out and those that are to be read out next. This eliminates the need for a separate signal line contact area in each pixel, and uses the timing signal and buss for one row as another timing signal and buss for the next row.

Multi-Purpose Architecture For Ccd Image Sensors

US Patent:
8411189, Apr 2, 2013
Filed:
May 25, 2011
Appl. No.:
13/115242
Inventors:
Antonio S. Ciccarelli - Webster NY, US
Eric J. Meisenzahl - Ontario NY, US
Assignee:
Truesense Imaging, Inc. - Rochester NY
International Classification:
H04N 5/14
H04N 5/335
US Classification:
348311, 348317, 257217, 257222
Abstract:
A charge-coupled device (CCD) image sensor includes multiple vertical charge-coupled device (VCCD) shift registers and independently-controllable gate electrodes disposed over the VCCD shift registers and arranged into physically separate and distinct sections that are non-continuous across the plurality of VCCD shift registers. The CCD image sensor can be configured to operate in two or more operating modes, including a full resolution charge multiplication mode.

Multi-Purpose Architecture For Ccd Image Sensors

US Patent:
2012029, Nov 29, 2012
Filed:
May 25, 2011
Appl. No.:
13/115235
Inventors:
Antonio S. Ciccarelli - Webster NY, US
Eric J. Meisenzahl - Ontario NY, US
International Classification:
H05K 3/10
US Classification:
29846
Abstract:
A charge-coupled device (CCD) image sensor includes multiple vertical charge-coupled device (VCCD) shift registers and independently-controllable gate electrodes disposed over the VCCD shift registers and arranged into physically separate and distinct sections that are non-continuous across the plurality of VCCD shift registers. The CCD image sensor can be configured to operate in two or more operating modes, including a full resolution charge multiplication mode.

Multi-Purpose Architecture For Ccd Image Sensors

US Patent:
2012030, Nov 29, 2012
Filed:
May 25, 2011
Appl. No.:
13/115244
Inventors:
Antonio S. Ciccarelli - Webster NY, US
Eric J. Meisenzahl - Ontario NY, US
International Classification:
H04N 5/335
US Classification:
348311, 348E05091
Abstract:
A charge-coupled device (CCD) image sensor includes multiple vertical charge-coupled device (VCCD) shift registers and independently-controllable gate electrodes disposed over the VCCD shift registers and arranged into physically separate and distinct sections that are non-continuous across the plurality of VCCD shift registers. The CCD image sensor can be configured to operate in two or more operating modes, including a full resolution charge multiplication mode.

Image Sensor Cover With Integral Light Shield

US Patent:
6075237, Jun 13, 2000
Filed:
Jul 29, 1998
Appl. No.:
9/124666
Inventors:
Antonio S. Ciccarelli - Rochester NY
Assignee:
Eastman Kodak Company - Rochester NY
International Classification:
H01J 4014
H01L 310232
US Classification:
2502081
Abstract:
An image sensor package cover with an opaque epoxy silk-screened into it. This epoxy is patterned to the appropriate size, for a particular sensor, to form an integral light shield on the cover, while simultaneously covering to the package. This masks the internal light reflections as well as the prior art methods of using a separate light shield, but eliminates a separate component and the costly labor required to assemble such a product. Such a configuration can be applied to a linear or area type image sensor.

Method Of Making A Low Capacitance Floating Diffusion Structure For A Solid State Image Sensor

US Patent:
5387536, Feb 7, 1995
Filed:
Jan 26, 1994
Appl. No.:
8/188500
Inventors:
Robert M. Guidash - Rush NY
Antonio S. Ciccarelli - Rochester NY
Assignee:
Eastman Kodak Company - Rochester NY
International Classification:
H01L 3118
US Classification:
437 3
Abstract:
A method for producing a low capacitance floating diffusion structure used for charge to voltage conversion in a solid state image sensor having an output amplifier provided with a gate electrode, comprising the steps of: (a) growing a gate oxide on a substrate of a given conductivity type; (b) forming the gate electrode for the output amplifier on the gate oxide and patterning the gate electrode so as to create an opening through it; (c) introducing through the opening a dopant of a conductivity type opposite to the given conductivity type so as to create a floating diffusion region in the substrate; and (d) creating an ohmic contact between the floating diffusion region and the gate electrode.

Low Capacitance Floating Diffusion Structure For A Solid State Image Sensor

US Patent:
5621230, Apr 15, 1997
Filed:
Jun 27, 1996
Appl. No.:
8/675328
Inventors:
Robert M. Guidash - Rush NY
Antonio S. Ciccarelli - Rochester NY
Assignee:
Eastman Kodak Company - Rochester NY
International Classification:
H01L 27148
US Classification:
257222
Abstract:
A method for producing a low capacitance floating diffusion structure used for charge to voltage conversion in a solid state image sensor having an output amplifier provided with a gate electrode, comprising the steps of: (a) growing a gate oxide on a substrate of a given conductivity type; (b) forming the gate electrode for the output amplifier on the gate oxide and patterning the gate electrode so as to create an opening through it; (c) introducing through the opening a dopant of a conductivity type opposite to the given conductivity type so as to create a floating diffusion region in the substrate; and (d) creating an ohmic contact between the floating diffusion region and the gate electrode.

Solid State Image Sensor With Selectable Resolution

US Patent:
5874993, Feb 23, 1999
Filed:
Apr 21, 1995
Appl. No.:
8/426513
Inventors:
Antonio S. Ciccarelli - Rochester NY
Herbert J. Erhardt - Rochester NY
Martin Potucek - Rochester NY
Assignee:
Eastman Kodak Company - Rochester NY
International Classification:
H04N 314
H04N 5335
US Classification:
348294
Abstract:
A solid state image sensor architecture that utilizes drain structures at one or more locations on a shift register, as set by the design, allowing the user to select which charge packets are needed to represent the image and draining the remaining packets. Since the used packets are drained, there is no need to provide clock cycles to output charge packets that are not used while in the low resolution mode. Clocking can be stopped after the needed number of cycles without leaving charge packets in the shift register without the possibility of corrupting subsequent image information by charge packets that have not been removed. Additionally, the reduction in clock cycles decreases the time required to process the current information, and allows the system to operate at higher speeds.

Possible Relatives

David M Ciccarelli  Daniel L Ciccarelli  Diana M Ciccarelli  Gene L Ciccarelli  Janet T Ciccarelli  Janice L Ciccarelli  John D Ciccarelli  Antonio V Whitfield  Antonio V Joyner  Antonio L Mckinney 

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