April Brown, Age 44Ventura, CA

April Brown Phones & Addresses

Ventura, CA

Hobbs, NM

Carlsbad, NM

Mentions for April Brown

Professional Records

License Records

April Denise Brown

Licenses:
License #: PNT.047756 - Active
Issued Date: Jun 16, 2015
Expiration Date: Jun 16, 2020
Type: Pharmacy Intern

April Denise Brown

Licenses:
License #: PTC.020590 - Expired
Issued Date: Oct 15, 2013
Expiration Date: Apr 15, 2015
Type: Pharmacy Technician Candidate

April Marie Brown

Licenses:
License #: 28919 - Active
Issued Date: Jan 7, 2011
Renew Date: Dec 1, 2015
Expiration Date: Nov 30, 2017
Type: Certified Public Accountant

Business Records

Name / TitleCompany / ClassificationPhones & Addresses
April Brown
Director
Anasim Advertisement, Marketing & Entertainment Corporation
April M. Brown TCL CLEANING, LLC
April N. Brown NIRVANA INVESTMENTS LLC
April Joy Brown PUP-CUTS INC

Publications

Us Patents

Method Of Fabricating Inverted Modulation-Doped Heterostructure

US Patent:
5322808, Jun 21, 1994
Filed:
Feb 19, 1993
Appl. No.:
8/020095
Inventors:
April S. Brown - Thousand Oaks CA
Joseph A. Henige - Thousand Oaks CA
Mark Lui - Thousand Oaks CA
Loi Nguyen - Thousand Oaks CA
Robert A. Metzger - Thousand Oaks CA
William E. Stanchina - Thousand Oaks CA
Assignee:
Hughes Aircraft Company - Los Angeles CA
International Classification:
H01L 21265
US Classification:
437 40
Abstract:
A donor layer (17) including an undoped wide bandgap material (14) and an n-type dopant (16) is deposited on a substrate (12) by molecular beam epitaxy (MBE) at a first temperature which is high enough for optimal growth of the donor layer (17). The dopant (16) is silicon or another material which exhibits surface segregation in the wide bandgap material (14) at the first temperature. An undoped spacer layer (18) of the wide bandgap material is deposited on the donor layer (17) at a second temperature which is sufficiently lower than the first temperature that surface segregation of the dopant material from the donor layer (17) into the spacer layer (18) is substantially suppressed. A channel layer (20) of a narrow bandgap material is formed on the spacer layer (18) at a third temperature which is higher than the second temperature and selected for optimal growth of the channel layer (20). The spacer layer (18) is substantially undoped, and the low temperature growth and reduction of donor movement reduces ionized impurity scattering in the channel layer (20).

Isbn (Books And Publications)

Theory Of Modern Electronic Semiconductor Devices

Author:
April S. Brown
ISBN #:
0471415413

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