Arifur Rahman, Age 30Paterson, NJ

6700823, Mar 2, 2004

Oct 30, 2002

10/283765

Arifur Rahman - Yonkers NY
Harold Scholz - Allentown PA

Lattice Semiconductor Corporation - Hillsboro OR

G11C 1604

36518905, 365154, 36518902, 365198, 36523003, 36523008

Systems and methods provide common mode termination for input/output circuits. For example, common mode termination may be provided to a bank of input/output circuits by programmably coupling a bus to each pair of input/output circuits. The bus provides a path to ground for common mode signals through a capacitor or, alternatively, the bus may be designed to provide or assist in providing the necessary capacitance.

6788101, Sep 7, 2004

Feb 13, 2003

10/366956

Arifur Rahman - Yonkers NY

Lattice Semiconductor Corporation - Hillsboro OR

H03K 19003

326 30, 326 86, 326 90, 326 41

A programmable interface circuit is disclosed, in accordance with one embodiment, which supports differential and single-ended signaling. For example, an input buffer within the programmable interface circuit is configurable to receive differential signals or single-ended signals. A multiplexer provides the appropriate reference signal to the input buffer, when configured to receive single-ended signals, by selecting the reference signal from a plurality of reference buses. The multiplexer, along with a capacitor, may also provide lowpass filtering of the reference signal. Furthermore, an output buffer may be configurable utilizing techniques similar to that described for the input buffer.

6812869, Nov 2, 2004

Feb 13, 2003

10/367323

Arifur Rahman - Yonkers NY
Harold Scholz - Allentown PA

Lattice Semiconductor Corporation - Hillsboro OR

H03M 700

341 78, 327211

An input/output (I/O) circuit bank is disclosed, in accordance with one embodiment, having programmable I/O circuits configurable to support I/O interface standards for single-ended and differential signaling. The associated pads of one or more of the I/O circuits may be utilized to provide an external reference signal via a pass transistor onto an internal bus for use by the remainder of the I/O circuits. The pass transistors may be designed to function as lowpass filters to limit the amount of noise that passes through them.

6859066, Feb 22, 2005

Feb 28, 2003

10/377320

Arifur Rahman - Yonkers NY, US
William Andrews - Emmaus PA, US
Mou C. Lin - High Bridge NJ, US

Lattice Semiconductor Corporation - Hillsboro OR

H03K019/094

326 63, 326 41

A bank of input/output buffers are configured such that each input buffer in the bank may select from a plurality of voltage references during single-ended operation. Similarly, the pad associated with each input buffer may serve to supply one of the voltage references for other input buffers within the bank.

7462512, Dec 9, 2008

Jan 11, 2005

11/033046

Kalle Levon - Brooklyn NY, US
Arifur Rahman - San Jose CA, US
Tsunehiro Sai - New York NY, US
Ben Zhao - Brooklyn NY, US

Polytechnic University - Brooklyn NY

H01L 21/00

438123, 257414, 438 48, 438 49, 438 56, 438257

Specific ionic interactions with a sensing material that is electrically coupled with the floating gate of a floating gate-based ion sensitive field effect transistor (FGISFET) may be used to sense a target material. For example, an FGISFET can use (e. g. , previously demonstrated) ionic interaction-based sensing techniques with the floating gate of floating gate field effect transistors. The floating gate can serves as a probe and an interface to convert chemical and/or biological signals to electrical signals, which can be measured by monitoring the change in the device's threshold voltage, V.

7884398, Feb 8, 2011

Dec 5, 2008

12/328893

Kalle Levon - Brooklyn NY, US
Arifur Rahman - San Jose CA, US
Tsunehiro Sai - New York NY, US
Ben Zhao - Brooklyn NY, US

Polytechnic Institute of New York University - Brooklyn NY

H01L 27/148

257236, 257239, 257E2706, 438 49

Specific ionic interactions with a sensing material that is electrically coupled with the floating gate of a floating gate-based ion sensitive field effect transistor (FGISFET) may be used to sense a target material. For example, an FGISFET can use (e. g. , previously demonstrated) ionic interaction-based sensing techniques with the floating gate of floating gate field effect transistors. The floating gate can serves as a probe and an interface to convert chemical and/or biological signals to electrical signals, which can be measured by monitoring the change in the device's threshold voltage, V.

2009007, Mar 26, 2009

Dec 5, 2008

12/328888

Kalle Levon - Brooklyn NY, US
Arifur Rahman - San Jose CA, US
Tsunehiro Sai - New York NY, US
Ben Zhao - Brooklyn NY, US

G01R 27/00

324 715

Specific ionic interactions with a sensing material that is electrically coupled with the floating gate of a floating gate-based ion sensitive field effect transistor (FGISFET) may be used to sense a target material. For example, an FGISFET can use (e.g., previously demonstrated) ionic interaction-based sensing techniques with the floating gate of floating gate field effect transistors. The floating gate can serves as a probe and an interface to convert chemical and/or biological signals to electrical signals, which can be measured by monitoring the change in the device's threshold voltage, V.

6639434, Oct 28, 2003

Oct 7, 2002

10/266361

Arifur Rahman - Yonkers NY

Lattice Semiconductor Corporation - Hillsboro OR

H03B 100

327108, 327309

A low voltage differential signaling driver is disclosed that is capable of supporting many different LVDS standards or signal level requirements. The low voltage differential signaling driver has a programmable offset voltage and a programmable differential output voltage, which may be programmed independently.