Arvind Sharma, Age 62Redmond, WA

4777490, Oct 11, 1988

Apr 22, 1986

6/859032

Arvind K. Sharma - Cranbury NJ
Paul J. Stabile - Langhorne PA

General Electric Company - Schenectady NY

H01Q 1906

343754

Antennas chiefly intended for microwave and millimeter-wave use include geometric-shaped conductive patches on one broad surface of a planar semiconductor substrate. The other broad side of the substrate bears a conductive ground plane. Monolithic PIN diodes are formed by doping the substrate at various points between the conductive patch and the ground plane. Biasing arrangements affect the conduction of the PIN diodes thereby affecting or tuning the optimum operating frequency, the radiation pattern, and/or the impedance of the antenna. In a particularly advantageous configuration, the PIN diodes have lateral dimensions greater than or equal to one-tenth wavelength (. lambda. /10) at the operating frequency. Distributed diodes have lower resistance and reactance than discrete or discrete monolithic diodes, thereby providing improved radiating characteristics, and have a relatively large power-handling capability which makes them useful for power transmission.

4780724, Oct 25, 1988

Apr 18, 1986

6/853739

Arvind K. Sharma - Cranbury NJ
Paul J. Stabile - Langhorne PA

General Electric Company - Schenectady NY

H01Q 138

343700MS

A patch antenna, which may be one element of an antenna array, is formed on one broad surface of a semiconductor plate. A ground plane is formed on the second broad surface. This semiconductor is doped in regions near a periphery of the patch to define a semiconductor PN junction have electrode contacts to the patch and to the ground plane. The junction has capacitance which tunes the patch antenna. The characteristics of the junction are controlled by bias to selectively tune the patch antenna. The bias is a direct voltage in one embodiment of the invention. In another embodiment, the junction work function itself provides a bias which is controlled by temperature control of the diode.

4568893, Feb 4, 1986

Jan 31, 1985

6/696748

Arvind K. Sharma - Cranbury NJ

RCA Corporation - Princeton NJ

H01P 118
H01P 1185

333157

A millimeter wave reflection phase shifter employs a fin-line structure within a waveguide network which has a central leg and four arms which together form two symmetric Y-junctions. The fin-line forms a septum within the waveguide and includes a conductive layer having a central gap or slot therein which extends along the leg and into each of the arms. Means for shorting the slot arms disposed at one end of the leg controls the phase shift experienced by a signal propagating through the phase shifter. This phase shifter may provide multiple selectable phase shifts.

4616196, Oct 7, 1986

Jan 28, 1985

6/695523

Arvind K. Sharma - Cranbury NJ

RCA Corporation - Princeton NJ

H01P 118

333161

A switched-line type phase shifter employs a reference, uniform transmission line and a coupled exponential transmission line. The coupled exponential line network provides a different phase shift but provides a phase shift versus frequency characteristic that over a wide frequency band matches the reference line.