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Benjamin B Haskell, Age 5010148 Crestwood Rd, Kensington, MD 20895

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Known as:
Benjamin Ballard Haskell Benjamin R Haskell Benjamin K Haskell Ben B Haskell Benjamin Ballard Ben Haskel Haskell Benjamin
Related to:
Vincent Flores 46

Benjamin Haskell Phones & Addresses

10148 Crestwood Rd, Kensington, MD 20895

25 Eastmoor Dr, Silver Spring, MD 20901 (301) 593-5894

Bethesda, MD

Boston, MA

Binghamton, NY

Winchester, MA

15 Worcester Sq APT 5, Boston, MA 02118

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Work

Position: Sales Occupations

Education

Degree: Bachelor's degree or higher

Mentions for Benjamin B Haskell

Benjamin Haskell resumes & CV records

Resumes

Benjamin Haskell Photo 22

Director Of Etp And Options Listing Regulation

Location:
10148 Crestwood Rd, Kensington, MD 20895
Industry:
Financial Services
Work:
Nasdaq
Director of Etp and Options Listing Regulation Nasdaq Legal and Regulatory Group Innovation Committee
Chair Nasdaq
Director of Etp Regulation Nasdaq Aug 2003 - Feb 2016
Director Investors Bank & Trust Jun 2002 - Aug 2002
Summer Associate Efi Mar 1999 - Jun 2001
Corporate Marketing Manager
Education:
Boston University 2001 - 2003
Master of Business Administration, Masters, Finance Marymount University 1995 - 1997
Bachelors, Bachelor of Arts, Communications Winchester High School (Massachusetts)
Winchester High School
Skills:
Equities, Options, Capital Markets, Analysis, Derivatives, Securities, Electronic Trading, Mergers and Acquisitions, Securities Regulation, Business Strategy, Project Management, Exchange Traded Derivatives, Mergers, Business Analysis, Corporate Governance, Non Profits, Non Profit Boards, Non Profit Finance, Regulatory Compliance, Collaborative Innovation, Innovation Development, Regulatory Risk
Benjamin Haskell Photo 23

Benjamin Haskell

Location:
Kensington, MD
Benjamin Haskell Photo 24

Benjamin Haskell

Benjamin Haskell Photo 25

Benjamin Haskell

Benjamin Haskell Photo 26

Benjamin Haskell

Location:
Pittsburgh, Pennsylvania
Industry:
Computer Software

Publications & IP owners

Us Patents

Semi-Polar Iii-Nitride Films And Materials And Method For Making The Same

US Patent:
2014035, Dec 4, 2014
Filed:
Aug 13, 2014
Appl. No.:
14/459120
Inventors:
- Carlsbad CA, US
Vladimir Ivantsov - Hyattsville MD, US
Benjamin A. Haskell - Carlsbad CA, US
Hussein S. El-Ghoroury - Carlsbad CA, US
Alexander Syrkin - Montgomery Village MD, US
International Classification:
H01L 21/02
H01L 29/167
H01L 29/16
H01L 29/04
H01L 29/20
US Classification:
257 77, 438478, 257 76
Abstract:
A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been utilized to grow multi-period stacks of alternating AlGaN layers of distinct compositions. The application of such periodic structures to semi-polar III-nitrides yielded superior structural and morphological properties of the material, including reduced threading dislocation density and surface roughness at the free surface of the as-grown material. Such enhancements enable to fabrication of superior quality semi-polar III-nitride electronic and optoelectronic devices, including but not limited to transistors, light emitting diodes, and laser diodes.

Possible Relatives

Dawn L Haskell  Debbie L Haskell  Daniel N Haskell  Aaron M Haskell  Dennis A Haskell  Diane L Haskell  Donna R Haskell  Benjamin B Joiner  Benjamin J Stanton  Benjamin O Staples 

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