Bernard S Fay, Age 82525 N Orange Ave UNIT 201, Sarasota, FL 34236

6847431, Jan 25, 2005

Mar 10, 2003

10/384969

Derek Coon - Redwood City CA, US
Bernard Fay - Sarasota FL, US

Nikon Corporation

G03B 2752
G03B 2742

355 30, 355 53, 359509

An optical assembly () for directing and/or focusing a beam of light energy for an exposure apparatus () includes an optical housing () and one or more optical elements () that cooperate to form an optical cavity () having one or more stagnant flow areas (). The optical assembly () also includes one or more flow diverters () for improving the flow a replacement fluid () in the stagnant flow areas () of the optical cavity () during purging of the optical assembly () with the replacement fluid ().

7087352, Aug 8, 2006

Nov 12, 2003

10/704979

Bernard Fay - Los Gatos CA, US

Nikon Corporation - Tokyo

G03C 5/00
G03F 9/00

430 22, 430 30

Non-imaging measurement is made of misalignment of lithographic exposures by illuminating periodic features of a mark formed by two lithographic exposures with broadband light and detecting an interference pattern at different wavelengths using a specular spectroscopic scatterometer including a wavelength dispersive detector. Misalignment can be discriminated by inspection of a spectral response curve and by comparison with stored spectral response curves that may be empirical data or derived by simulation. Determination of best fit to a stored spectral curve, preferably using an optimization technique can be used to quantify the detected misalignment. Such a measurement may be made on-line or in-line in a short time while avoiding tool induced shift, contact with the mark or use of a tool requiring high vacuum.

7368206, May 6, 2008

Dec 27, 2005

11/316913

Bernard Fay - Sarasota FL, US
Arun A. Aiyer - Lewisville TX, US

Nikon Corporation - Tokyo

G03C 5/00
G03F 9/00

430 22, 430 30, 356399, 356400

Non-imaging measurement is made of misalignment of lithographic exposures by illuminating periodic features of a mark formed by two lithographic exposures with broadband light and detecting an interference pattern at different wavelengths using a specular spectroscopic scatterometer including a wavelength dispersive detector. Misalignment can be discriminated by inspection of a spectral response curve and by comparison with stored spectral response curves that may be empirical data or derived by simulation. Determination of best fit to a stored spectral curve, preferably using an optimization technique can be used to quantify the detected misalignment. Such a measurement may be made on-line or in-line in a short time while avoiding tool induced shift, contact with the mark or use of a tool requiring high vacuum.

2002019, Dec 19, 2002

Jun 15, 2001

09/881026

Bernard Fay - Los Gatos CA, US
Arun Aiyer - Fremont CA, US

G03F009/00
G03C005/00

430/022000, 430/030000

Non-imaging measurement is made of misalignment of lithographic exposures by illuminating periodic features of a mark formed by two lithographic exposures with broadband light and detecting an interference pattern at different wavelengths using a specular spectroscopic scatterometer including a wavelength dispersive detector. Misalignment can be discriminated by inspection of a spectral response curve and by comparison with stored spectral response curves that may be empirical data or derived by simulation. Determination of best fit to a stored spectral curve, preferably using an optimization technique can be used to quantify the detected misalignment. Such a measurement may be made on-line or in-line in a short time while avoiding tool induced shift, contact with the mark or use of a tool requiring high vacuum.

4704033, Nov 3, 1987

Mar 6, 1986

6/836784

Bernard Fay - San Jose CA
W. Thomas Novak - San Jose CA

Micronix Corporation - Los Gatos CA

G01B 902
G01B 1127

356363

An optical alignment apparatus and method for a semiconductor lithography mask and wafer utilizes two monochromatic light sources of different wavelengths. The mask contains targets in the form of linear Fresnel zone plates and the wafer contains a reflecting grating. Incident illumination from the two light sources illuminates the mask targets and is reflected from the wafer gratings in various intensity depending on the physical characteristics of the wafer and mask layers and thicknesses and by the targets. A detector detects the strongest of the diffracted return beams from each of the monochromatic light sources and uses the strongest to align the targets and grating on the mask and wafer for more accurate printing of mask patterns on the wafer.

4698834, Oct 6, 1987

Feb 12, 1986

6/828837

Ronnie Northrup - San Jose CA
Bernard Fay - San Jose CA

Micronix Corporation - Los Gatos CA

G21K 508

378 34

An x-ray mask membrane reflection compensator includes an x-ray chamber having a transmitting gaseous media therein chamber through which x-rays are directed to a mask membrane that is positioned in close spaced proximity to a resist-coated wafer. A controlled environment of processing gas is provided within a gap between the mask membrane and wafer surfaces. The processing gas and gaseous media pressures variously cause bulging of the membrane resulting in a descrepancy in the gap distance across the field of view. A laser source provides an incident beam of light which is directed at an incident angle to the mask membrane and the wafer surface such that return beams are reflected and interference fringe patterns, due to slight nonparallelism of the mask membrane and the wafer are displayed on a monitor. A standard reference line is established by a reference fringe band at a null position of the mask membrane and the movement of the reference fringe based from the references line is utilized to detect the deflection of the mask membrane by reason of a net differential pressure on the mask membrane. Control of the pressure of the processing gas or chamber gaseous media returns the reference fringe band pressure to the reference line to indicate that the mask membrane is back at a null, nondeflected position.