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Buddie R Dotter, Age 6255173 Hearthside Dr, Shelby Township, MI 48316

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Known as:
Buddie Roger Dotter Buddie I Dotter Bubbie Dotter Buddie Dotter Revocabl Buddie Domer

Buddie Dotter Phones & Addresses

55173 Hearthside Dr, Utica, MI 48316 (586) 992-0244 (248) 992-0244

45501 Cornwall St, Utica, MI 48317 (810) 254-9538

Shelby Township, MI

Sterling Heights, MI

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Buddie R Dotter

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Work

Company: United solar ovonic (subsidiary of energy conversion devices) - Auburn Hills, MI Oct 2008 Position: Process engineer

Education

School / High School: Wayne State University- Detroit, MI 2008 Specialities: Bachelor of Science in Electrical Engineering Technology (expected 2013)

Skills

AutoCAD • LabVIEW • C • Data acquisition • testing and measurement • system troubleshooting • computer modeling and simulation • light machining and mechanical design • custom electronic circuitry and software

Industries

Renewables & Environment

Mentions for Buddie R Dotter

Buddie Dotter resumes & CV records

Resumes

Buddie Dotter Photo 7

Advanced Test Engineer

Location:
Detroit, MI
Industry:
Renewables & Environment
Work:
Brose Group
Advanced Test Engineer Accio Energy Sep 2012 - Nov 2013
Master Electronics Technician \ Test Engineer Fte Automotive Gmbh Sep 2012 - Nov 2013
Electrical Engineer United Solar Ovonic Oct 2008 - May 2012
Senior Process Engineer Energy Conversion Devices May 1990 - Oct 2008
Senior Process Engineer
Education:
Wayne State University
Bachelors, Electrical Engineering
Skills:
Thin Film Coating, Thin Film Characterization, Microsoft Office, Microcontrollers, Microchip Pic, Fiber Optics, Optical Sensors, Microwave, Pecvd, Sputter Deposition, Plasmas, Software, Labview, Visual Basic, Organic Electronics, Oled, Solid State Lighting, Field Service, Technical Marketing, Hazardous Materials Management, Electro Mechanical, Digital Electronics, Analog Circuits, Solar Pv, Electroplating, Vacuum Deposition, Motor Control, Web Handling, Motor Drives, Semiconductors, Semiconductor Process, Photovoltaics, Thin Films, Solar Energy, Uhv, Electronics, Vacuum, Photolithography, Cvd, Pvd, Solar Cells, Design of Experiments, Silicon, Sputtering, Etching, Semiconductor Fabrication, Lithography, Batteries, Electronics Technology
Buddie Dotter Photo 8

Buddie Dotter - Township of Shelby, MI

Work:
United Solar Ovonic (subsidiary of Energy Conversion Devices) - Auburn Hills, MI Oct 2008 to May 2012
Process Engineer Energy Conversion Devices - Rochester Hills, MI May 1990 to Oct 2008
Senior Electronic Technician Concept Electronic Systems - Sterling Heights, MI Jun 1988 to May 1990
Engineering Technician Vultron Inc - Rochester Hills, MI Mar 1984 to Jun 1988
Electronics Technician
Education:
Wayne State University - Detroit, MI 2008 to 2013
Bachelor of Science in Electrical Engineering Technology (expected 2013) ITT Technical Institute - Fort Wayne, IN 1980 to 1983
Associate of Science in Electrical Engineering Technology
Skills:
AutoCAD, LabVIEW, C, Data acquisition, testing and measurement, system troubleshooting,computer modeling and simulation, light machining and mechanical design, custom electronic circuitry and software

Publications & IP owners

Us Patents

System And Method For Manufacturing Thin Film Electrical Devices

US Patent:
2009006, Mar 12, 2009
Filed:
Jul 30, 2008
Appl. No.:
12/220934
Inventors:
Vincent Cannella - Beverly Hills MI, US
George Uzoni - West Bloomfield MI, US
Buddie Dotter - Shelby Township MI, US
International Classification:
C23C 16/54
B05D 5/12
US Classification:
427 58, 118719
Abstract:
A system for manufacturing a thin film electrical device is provided in accordance with an exemplary embodiment. The system includes a chamber and a gas gate. The chamber includes accumulating apparatus therein configured for gathering a portion of the substrate within the chamber. The gas gate provides fluid communication between a pressure region of the chamber and a second pressure region.

Method Of Creating A High Flux Of Activated Species For Reaction With A Remotely Located Substrate

US Patent:
4937094, Jun 26, 1990
Filed:
Jun 29, 1989
Appl. No.:
7/373300
Inventors:
Joachim Doehler - Union Lake MI
Stephen J. Hudgens - Southfield MI
Stanford R. Ovshinsky - Bloomfield Hills MI
Buddie Dotter - Utica MI
Lester R. Peedin - Oak Park MI
Jeffrey M. Krisko - Highland MI
Annette Krisko - Highland MI
Assignee:
Energy Conversion Devices, Inc. - Troy MI
International Classification:
B05D 306
US Classification:
427 38
Abstract:
A method of forming a high flux of activated species, such as ions, of an energy transferring gas by employing a substantial pressure differential between a first conduit in which the energy transferring gas is introduced into a vacuumized enclosure and the background pressure which exits in said enclosure. In one embodiment, the flow rate of the energy transferring gas flowing through said first conduit, when taken in conjunction with said pressure differential, causes the high flux to activated species of the energy transferring gas to collide with a precursor deposition/etchant gas, remotely introduced into the enclosure through a second conduit, for forming deposition/etchant species therefrom. In an alternate embodiment, the pressure differential causes those activated species, themselves, to be either deposited upon or etched away from the surface of a remotely positioned substrate.

Highpower Microwave Transmissive Window Assembly

US Patent:
5132652, Jul 21, 1992
Filed:
Nov 20, 1989
Appl. No.:
7/439057
Inventors:
Joachim Doehler - Union Lake MI
Buddie Dotter - Utica MI
Jeffrey M. Kirsko - Highland MI
Lester R. Peedin - Oak Park MI
Assignee:
Energy Conversions Devices Inc. - Troy MI
Canon Inc. - Tokyo
International Classification:
H01P 108
US Classification:
333252
Abstract:
A window assembly for transmitting relatively high power microwave energy from a waveguide, held at substantially atmospheric pressure levels, into a microwave reaction chamber at sub-atmospheric pressure levels. The window assembly provides for the transmission of microwave energy to generate a glow discharge plasma without suffering from catastrophic failure as a result of excessive temperature and pressure conditions.

High Power Microwave Transmissive Window Assembly

US Patent:
4931756, Jun 5, 1990
Filed:
Apr 8, 1988
Appl. No.:
7/179617
Inventors:
Joachim Doehler - Union Lake MI
Buddie Dotter - Utica MI
Jeffrey M. Krisko - Highland MI
Lester R. Peedin - Oak Park MI
Assignee:
Energy Conversion Devices, Inc. - Troy MI
International Classification:
H01P 108
US Classification:
333252
Abstract:
A window assembly for transmitting relatively high power microwave energy from a waveguide, held at substantially atmospheric pressure levels, into a microwave reaction chamber at sub-atmospheric pressure levels. The window assembly provides for the transmission of microwave energy to generate a glow discharge plasma without suffering from catastrophic failure as a result of excessive temperature and pressure conditions.

Apparatus For The Simultaneous Microwave Deposition Of Thin Films In Multiple Discrete Zones

US Patent:
5411591, May 2, 1995
Filed:
Jul 22, 1994
Appl. No.:
8/278734
Inventors:
Masatsugu Izu - Bloomfield Hills MI
Buddie R. Dotter - Utica MI
Stanford R. Ovshinsky - Bloomfield Hills MI
Wataru Hasegawa - Higashi-Osaka, JP
Assignee:
Energy Conversion Devices, Inc. - Troy MI
International Classification:
C23C 1650
US Classification:
118718
Abstract:
Apparatus for the simultaneous plasma assisted chemical vapor deposition of thin film material onto an elongated web of substrate material at a plurality of discrete spatially separated deposition zones. In order to accomplish said simultaneous deposition, the web of substrate material is operatively positioned so as to assume a serpentine path of travel through a reduced pressure enclosure. By using an elongated linear applicator as a source of microwave energy, a high rate of uniform deposition of said thin film material over a plurality of large areas of the web of substrate material can be simultaneously achieved without heating of said web above the melting point thereof. In a preferred embodiment, the web of substrate material is formed of a low temperature, microwave transmissive synthetic plastic resin and the thin film material deposited thereupon forms a barrier coating for preventing oxygen diffusion therethrough.

Microwave Plasma Operation Using A High Power Microwave Transmissive Window Assembly

US Patent:
5126635, Jun 30, 1992
Filed:
Apr 2, 1991
Appl. No.:
7/679362
Inventors:
Joachim Doehler - Union Lake MI
Buddie Dotter - Utica MI
Jeffrey M. Krisko - Highland MI
Lester R. Peedin - Oak Park MI
Assignee:
Energy Conversion Devices, Inc. - Troy MI
International Classification:
H01J 726
US Classification:
31511121
Abstract:
A window assembly for transmitting relatively high power microwave energy from a waveguide, held at substantially atmospheric pressure levels, into a microwave reaction chamber at sub-atmospheric pressure levels. The window assembly provides for the transmission of microwave energy to generate a glow discharge plasma without suffering from catastrophic failure as a result of excessive temperature and pressure conditions.

Modified Silicon Oxide Barrier Coatings Produced By Microwave Cvd Deposition On Polymeric Substrates

US Patent:
5670224, Sep 23, 1997
Filed:
Apr 17, 1995
Appl. No.:
8/423666
Inventors:
Masatsugu Izu - Bloomfield Hills MI
Buddie R. Dotter - Utica MI
Assignee:
Energy Conversion Devices, Inc. - Troy MI
International Classification:
B32B 108
US Classification:
428 358
Abstract:
A method of depositing, by microwave plasma enhanced chemical vapor deposition, a modified, silicon oxide, barrier coating atop a temperature sensitive substrate; said barrier coating having barrier properties to at least gaseous oxygen and water vapor. The precursor gaseous mixture includes at least a silicon-hydrogen containing gas, an oxygen containing gas and a gas containing at least one element selected from the group consisting of germanium, tin, phosphorus, and boron. The method requires introducing a sufficient flow rate of oxygen-containing gas into the precursor gaseous mixture to eliminate the inclusion of silicon-hydrogen bonds into the deposited coating. The preferred modifier is germanium. Also, a composite material having a microwave-plasma-enhanced-chemical-vapor-deposited silicon oxide (modified or non-modified) barrier coating. The barrier coating has barrier properties to at least gaseous oxygen and water vapor and is substantially free of Si--H bonds.

Fire Resistant Laminate And Photovoltaic Module Incorporating The Fire Resistant Laminate

US Patent:
2006020, Sep 14, 2006
Filed:
Feb 16, 2006
Appl. No.:
11/356376
Inventors:
Stanford Ovshinsky - Bloomfield Hills MI, US
Lin Higley - Troy MI, US
Marshall Muller - Farmington MI, US
Timothy Ellison - Holly MI, US
Joachim Doehler - White Lake MI, US
Buddie Dotter - Shelby Twp MI, US
Steve Heckeroth - Albion CA, US
International Classification:
H02N 6/00
US Classification:
136251000
Abstract:
The present invention discloses a fire resistant laminate and incorporating the laminate into an encapsulant for a photovoltaic module that may be used in a photovoltaic building material. More particularly, the present invention relates to fire resistant encapsulant that may be used in a triple junction amorphous silicon photovoltaic module that is fire resistant on a wide variety of buildings roofs, including residential housing, and that is flexible and lightweight. A fire resistant additive, such as solid glass spheres, may be added to encapsulant material to produce a fire resistant, cut resistant, lightweight photovoltaic device.

Possible Relatives

James A Dotter  Karen S Dotter  Linda M Dotter  Richard M Dotter  Buddie E Livingston 

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