Inventors:
Chang Wan Ha - Pleasanton CA
Assignee:
Winbond Electronics Corporation
International Classification:
G11C 1606
Abstract:
A column decoder in an electrically-erasable, programmable read-only memory applies a bias voltage to, or floats, the gates of selected transistors during an erasure operation. This reduces the potential for gate oxide breakdown by decreasing the voltage difference between the gate and the relatively high erasure voltage. This allows the use of transistors having a thinner gate oxide, enabling easier laying out of the transistors within a given bit line pitch.