Charles A Paquette, Age 824 Waters Edge Dr, Hog Island, VT 05488

4725560, Feb 16, 1988

Sep 8, 1986

6/905012

John R. Abernathey - Essex VT
David L. Johnson - Jericho VT
Pai-Hung Pan - Essex Junction VT
Charles A. Paquette - Saint Albans VT

International Business Machines Corp. - Armonk NY

H01L 21265

437 20

An annealing process carried out at 800. degree. C. in a wet O. sub. 2 ambient permits the manufacture of a reliable storage capacitor wherein the dielectric layer is comprised of silicon oxynitride formed by low pressure chemical vapor deposition (LPCVD). The manufacturing process includes first depositing the silicon oxynitride film by LPCVD, second annealing in wet O. sub. 2 at 800. degree. C. or N. sub. 2 at 1000. degree. C. , third forming an N-type region in the silicon substrate by As. sup. + ion implantation through the silicon oxynitride film, fourth annealing in wet O. sub. 2 at 800. degree. C. , and fifth depositing an electrode.