Christopher A Bower, Age 51728 Richmond St, Raleigh, NC 27609

6630772, Oct 7, 2003

Apr 22, 1999

09/296572

Christopher Andrew Bower - Chapel Hill NC
Otto Zhou - Chapel Hill NC
Wei Zhu - Warren NJ

Agere Systems Inc. - Berkeley Heights NC
University of North Carolina - Chapel Hill NC

H01J 162

313311, 313309, 313310, 313495, 445 50, 445 49, 445 51

The invention provides improved devices containing adherent carbon nanotube films, in particular electron field emitter structures containing such films. Previously, attaining even moderate adherence of powdery or mat-like nanotubes to a substrate was difficult, because of the perfect fullerene structure of nanotubes, which tend to exhibit no dangling bonds or defect sites where chemical bonding to the substrate is able to occur. The invention overcomes these problems, and provides a strongly adherent nanotube film, by a variety of fabrication processes.

7999454, Aug 16, 2011

Aug 14, 2008

12/191478

Dustin L. Winters - Webster NY, US
John W. Hamer - Rochester NY, US
Gary Parrett - Rochester NY, US
Christopher Bower - Raleigh NC, US
Etienne Menard - Durham NC, US

Global OLED Technology LLC - Herndon VA
Semprius, Inc. - Durham NC

H05B 33/08
H01L 51/00

313500, 313506, 313504

An electroluminescent device having a plurality of current driven pixels arranged in rows and columns, such that when current is provided to a pixel it produces light, including each pixel having first and second electrodes and current responsive electroluminescent media disposed between the first and second electrodes; at least one chiplet having a thickness less than 20 micrometers; including transistor drive circuitry for controlling the operation of at least four pixels, the chiplet being mounted on a substrate and having connection pads; a planarization layer disposed over at least a portion of the chiplet; a first conductive layer over the planarization layer and connected to at least one of the connection pads; and a structure for providing electrical signals through the first conductive layer and at least one of the connection pads of the chiplet so that the transistor drive circuitry of the chiplet controls current to the four pixels.

8035223, Oct 11, 2011

Aug 28, 2007

11/846253

Philip Garrou - Cary NC, US
Charles Kenneth Williams - Raleigh NC, US
Christopher A. Bower - Raleigh NC, US

Research Triangle Institute - Research Triangle Park NC

H01L 23/34

257713, 257714, 257777, 257E23097

A structure and method for thermal management of integrated circuits. The structure for thermal management of integrated circuits includes first and second substrates bonded together, at least one of the first and second substrates including at least one circuit element, an entrance through-hole having a length extending through a thickness of at least one of the first substrate and the second substrate, an exit through-hole having a length extending through a thickness of at least one of the first substrate and the second substrate, a bonding element forming a seal between the first and second substrates and forming a space between the first and second substrate, and a coolant channel formed in the space between the first and second substrates such that a fluid entering the entrance through-hole transits the coolant channel and the exit through-hole to provide cooling to the circuit element. The method supplies a fluid through the entrance through-hole, flows the fluid through the coolant channel between the first substrate and second substrates, and removes the fluid from the coolant channel through the exit through-hole.

8486765, Jul 16, 2013

Sep 21, 2011

13/238975

Philip Garrou - Cary NC, US
Charles Kenneth Williams - Raleigh NC, US
Christopher A. Bower - Raleigh NC, US

Research Triangle Institute - Research Triangle Park NC

H01L 21/00

438122, 257713, 257714, 257E23097, 257E23098

A method for making a structure for thermal management of circuit devices. The method provides a first substrate and a second substrate where at least one of the first and second substrates includes a circuit element. The method forms in at least one of the first substrate and the second substrate an entrance through-hole extending through a thickness of the first substrate or the second substrate, forms in at least one of the first substrate and the second substrate an exit through-hole extending through a thickness of the first substrate or the second substrate, forms respective bonding elements on at least one of the first and second substrates, and bonds the first and second substrates at the respective bonding elements to form a seal between the first and second substrates and to form a first coolant channel in between the first and second substrates.

2002011, Aug 22, 2002

Feb 12, 2002

10/074128

Christopher Bower - New Providence NJ, US
Sungho Jin - Millington NJ, US
Wei Zhu - Warren NJ, US

C23C016/00

428/401000, 427/569000, 427/255280, 428/364000

The invention provides a process capable of providing elongated nanostructures conformably aligned perpendicular to the local surface, while also allowing control over the diameter, length, and location. The process also permits controllably introducing defects at desired locations along the length. Conformably aligned straight sections are grown under the influence of an electrical field and curly defect regions are grown after switching off the field. A preferred embodiment uses high frequency plasma enhanced chemical vapor deposition (PECVD), typically with microwave-ignited plasma. The extraordinarily high extent of conformal alignment—on both flat and non-flat surfaces—appears to be due to the electrical self-bias imposed on the substrate by the plasma, the field line of which is perpendicular to the substrate surface. In addition to the conformal orientation, it was found that by selecting a particular thickness for the catalyst layer, it was possible to obtain nanotubes of a desired diameter, while the length of the nanostructure is determined by the duration of the PECVD process. And, by patterning the catalyst metal, it is possible to form nanostructures in particular locations on a substrate.

2003013, Jul 17, 2003

Jan 16, 2002

10/050244

Zhenan Bao - Jersey City NJ, US
Christopher Bower - New Providence NJ, US
Sungho Jin - Millington NJ, US
Kevin Robinson - Zionsville PA, US
Yiu-Man Wong - Wescosville PA, US
Wei Zhu - Warren NJ, US

G02B006/10

385/002000, 385/129000

An electrooptic device and method for making the same, including one or more of substrate, a buffer layer, a charge dissipation layer, and electrodes. An F containing active trapping layer is deposited at the substrate/buffer interface, within the buffer layer, and/or on top of the buffer layer. The active F ions in the F containing active trapping layer react with positive ions, such as Li from the substrate to form stable compounds such as LiF. Porous material such as carbon nanotubes may be used in place of or in addition to the F containing active trapping layer. The reduced number of Li ions reduces the DC drift of the associated electrooptic device. The profile of the implanted ions may be adjusted to control and/or optimize the properties of the electrooptic device. Fluorine is particularly advantageous because it also lowers the dielectric constant thereby facilitating higher frequency operation.

2003013, Jul 17, 2003

Jan 16, 2002

10/050656

Sungho Jin - Millington NJ, US
Yiu-Man Wong - Wescosville PA, US
Wei Zhu - Warren NJ, US
Christopher Bower - New Providence NJ, US

G02F001/035

385/002000

An electrooptic device and method for making the same, including one or more of substrate, a buffer layer, a charge dissipation layer, and electrodes are disclosed. Active ions, such as F ions, are implanted the buffer layer. The active ions react with positive ions, such as Li from the substrate to form stable compounds such as LiF. The reduced number of mobile Li ions reduces the DC drift of the associated electrooptic device. The profile of the implanted ions may be adjusted to control and/or optimize the properties of the electrooptic device. Fluorine is particularly advantageous because it also lowers the dielectric constant, thereby facilitating higher frequency operation.

2003020, Nov 6, 2003

Aug 2, 2001

09/921223

Christopher Bower - New Providence NJ, US
Sungho Jin - Millington NJ, US
Hareesh Mavoori - Piscataway NJ, US
Robert Van Dover - Maplewood NJ, US

H01B001/00

505/100000

It was discovered that metals useful for cuprate superconductor wires and ribbons, such as Ag, Cu, and Au, are not necessarily desirable for magnesium boride superconductor bodies, since such elements tend to react with Mg and thereby deteriorate the properties of the superconducting MgB. The invention relates to techniques and materials that provide useful MgBsuperconducting bodies. The invention relates to a method for forming a MgBsuperconducting body, involving providing an intermediate body of a metal cladding; superconducting material or precursor material for superconducting material; and, optionally, a diffusion barrier (depending on the type of metal cladding); performing a cross-section reducing operation on the intermediate body, to provide an elongate body; and performing a heat treatment of the elongate body, to obtain desired properties from the superconducting material (and to also form the superconducting MgBmaterial when precursor material is used).