Chung S Lam, Age 7087 Palisades Blvd, Palisades Park, NJ 07650

7324366, Jan 29, 2008

Apr 21, 2006

11/409440

Johannes Georg Bednorz - Wolfhausen, CH
Chung Hon Lam - Peekskill NY, US
Gerhard Ingmar Meijer - Zurich, CH

International Business Machines Corporation - Armonk NY

G11C 11/00

365148, 365100, 365177

A nonvolatile memory array includes a plurality of word lines, a plurality of bit lines, a plurality of source lines, and a plurality of nonvolatile memory cells. Each of at least a subset of the plurality of memory cells has a first terminal connected to one of the plurality of word lines, a second terminal connected to one of the plurality of bit lines, and a third terminal connected to one of the plurality of source lines. At least one of the memory cells includes a bipolar programmable storage element operative to store a logic state of the memory cell, a first terminal of the bipolar programmable storage element connecting to one of a corresponding first one of the bit lines and a corresponding first one of the source lines, and a metal-oxide-semiconductor device including first and second source/drains and a gate. The first source/drain is connected to a second terminal of the bipolar programmable storage element, the second source/drain is adapted for connection to a corresponding second one of the bit lines, and the gate is adapted for connection to a corresponding one of the word lines. For at least a subset of the plurality of memory cells, each pair of adjacent memory cells along a given word line shares either the same bit line or the same source line.

7394089, Jul 1, 2008

Aug 25, 2006

11/467294

James P. Doyle - Bronx NY, US
Bruce G. Elmegreen - Golden Bridge NY, US
Lia Krusin-Elbaum - Dobbs Ferry NY, US
Chung Hon Lam - Peekskill NY, US
Xiao Hu Liu - Briarcliff Manor NY, US
Dennis M. Newns - Yorktown Heights NY, US
Christy S. Tyberg - Mahopac NY, US

International Business Machines Corporation - Armonk NY

H01L 47/00

257 4, 257209, 257529, 257E2917

An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

7473921, Jan 6, 2009

Jun 7, 2006

11/448549

Chung Hon Lam - Peekskill NY, US
Alejandro Gabriel Schrott - New York NY, US

International Business Machines Corporation - Armonk NY

H01L 47/00

257 4, 257 2, 257E45002, 257E45003

A memory cell comprises a first feature and a second feature. The second feature comprises a dielectric material and defines an opening at least partially overlying the first feature. A third feature is formed on the first feature and partially fills the opening in the second feature. What is more, a phase change material at least fills a volume between the second feature and the third feature. At least a portion of the phase change material is operative to switch between lower and higher electrical resistance states in response to an application of a switching signal to the memory cell.

7476926, Jan 13, 2009

Jan 6, 2005

10/905475

Chung H. Lam - Peekskill NY, US
Jeffrey B. Johnson - Essex Junction VT, US

International Business Machines Corporation - Armonk NY

H01L 29/76

257314, 257316

A nonvolatile storage cell and an integrated circuit (IC) including the cells. A layered spacer (ONO) is formed at least at one sidewall of cell gates. Source/drain diffusions at each layered spacer underlap the adjacent gate. Charge may be stored at a layer (an imbedded nitride layer) in the layered spacer.

7480184, Jan 20, 2009

Jan 7, 2007

11/620704

Chung H. Lam - Peekskill NY, US

International Business Machines Corporation - Armonk NY

G11C 11/34
G11C 16/04

36518524, 36518503

An operating procedure to provide a cost effective method to maximize the number of levels with respect to a characteristic parameter of a memory cell. The procedures utilize statistical analysis to determine the most likely binary value associated with the characteristic parameter value. In one embodiment, a receiving unit reads the values of the characteristic parameter for each memory cell in the memory cell collection containing a target memory cell. A generating unit generates a probability distribution function of the characteristic parameter for each of the possible binary values for the memory cell collection. The generating unit uses the probability distribution function to determine the probable value range for the shifted value of the characteristic parameter of the target memory cell. The value of the characteristic parameter for the target memory cell is converted into a binary value for which the probability is highest.

7491573, Feb 17, 2009

Mar 13, 2008

12/047459

Alejandro G Schrott - New York NY, US
Chung H Lam - Peekskill NY, US
Simone Raoux - Santa Clara CA, US
Chieh-Fang Chen - Tarrytown NY, US

International Business Machines Corporation - Armonk NY

H01L 21/336

438 95, 438102, 438103, 438257, 438604, 438FOR 256, 438FOR 267, 438FOR 292, 438FOR 344, 257E21662, 257E21679, 257E27104, 257E31029

A memory device utilizing a phase change material as the storage medium, the phase change material based on antimony as the solvent in a solid solution.

7491965, Feb 17, 2009

May 28, 2008

12/127994

James P. Doyle - Bronx NY, US
Bruce G. Elmegreen - Golden Bridge NY, US
Lia Krusin-Elbaum - Dobbs Ferry NY, US
Chung Hon Lam - Peekskill NY, US
Xiao Hu Liu - Briarcliff Manor NY, US
Dennis M. Newns - Yorktown Heights NY, US
Christy S. Tyberg - Mahopac NY, US

International Business Machines Corporation - Armonk NY

H01L 47/00

257 4, 257209, 257529, 257E2917

An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.

7492631, Feb 17, 2009

May 9, 2008

12/118496

Solomon Assefa - Ossining NY, US
William J. Gallagher - Ardsley NY, US
Chung H. Lam - Peekskill NY, US
Jonathan Z. Sun - Shrub Oak NY, US

International Business Machines Corporation - Armonk NY

G11C 11/14

365171, 365158, 365173

An exemplary method for resetting a spin-transfer based random access memory system, the method comprising, inducing a first current through a conductor, wherein the first current is operative to change a direction of orientation of a magnetic reference layer, inducing a second current from the drain terminal to the write terminal via a conductive layer, wherein the second current is operative to change the direction of a magnetic state of a free layer magnet, and inducing a third current through the conductor, wherein the third current is operative to change the direction of magnetic orientation of the reference layer.