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Darren M Hansen, Age 516211 Shirewood Cir, Midland, MI 48642

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Known as:
Darren Michael Hansen Darren Michael Darren Michael Darryl Hansen
Related to:
Dean P Mayer 64

Darren Hansen Phones & Addresses

6211 Shirewood Cir, Midland, MI 48642 (989) 839-6617

1101 Adams Dr, Midland, MI 48642 (989) 839-6617

3247 Forest St, Madison, WI 53704 (608) 249-4609

2928 Curry Ct, Madison, WI 53713 (608) 273-3124

55 Mill Plain Rd, Danbury, CT 06811

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Darren Hansen resumes & CV records

Resumes

Darren Hansen Photo 45

Conductive Materials Technology Leader

Location:
Midland, MI
Industry:
Chemicals
Work:
Dow Corning Feb 2011 - Jan 2015
S and T Process Development Manager Dow Corning Feb 2011 - Jan 2015
Conductive Materials Technology Leader Dow Corning Nov 2003 - Jan 2011
Sic Crystal Growth Engineer Alfalight May 2001 - Nov 2003
Epitaxial Growth Engineering
Education:
University of Wisconsin - Madison 1995 - 2001
Doctorates, Doctor of Philosophy, Chemical Engineering University of Michigan 1991 - 1995
Bachelors, Bachelor of Science, Chemical Engineering, Engineering
Skills:
Design of Experiments, Materials Science, Process Engineering, Process Simulation, R&D, Semiconductors, Chemical Engineering, Characterization, Product Development, Manufacturing, Thin Films, Cvd, Polymers, Coatings, Engineering, Spc, Deposition and Growth, Research and Development, Metrology, Jmp, Statistical Process Control
Languages:
French
Darren Hansen Photo 46

Ecommerce Sales Manager

Industry:
Internet
Work:
Amabay
Ecommerce Sales Manager Sportsdiamond.com 2000 - 2010
Owner
Darren Hansen Photo 47

Darren Hansen

Darren Hansen Photo 48

Darren Hansen

Publications & IP owners

Us Patents

Narrow Lateral Waveguide Laser

US Patent:
2004008, Apr 29, 2004
Filed:
Oct 24, 2002
Appl. No.:
10/279744
Inventors:
Luke Mawst - Sun Prairie WI, US
Nelson Tansu - Madison WI, US
Michael Nesnidal - Oregon WI, US
Steven Meassick - Mt. Horeb WI, US
Eric Stiers - LaCrosse WI, US
Darren Hansen - Madison WI, US
Troy Goodnough - Madison WI, US
International Classification:
H01S005/00
US Classification:
372/045000
Abstract:
An edge-emitting semiconductor laser incorporating a narrow waveguide design is disclosed. The narrow waveguide expands the lateral mode size, creates a large modal spot size, and insures higher-order modes are beyond cutoff. Separate current confinement allows the current injection region to match the mode size. The resulting device exhibits single-mode operation with a large spot-size to high output powers.

Shear Thinning Thermally Conductive Silicone Compositions

US Patent:
2023003, Feb 2, 2023
Filed:
Feb 11, 2021
Appl. No.:
17/787455
Inventors:
- Midland MI, US
- Collegeville PA, US
Darren Hansen - Auburn MI, US
International Classification:
C08L 83/04
C08J 3/22
Abstract:
A composition contains the following components: (a) 15 to 49.8 volume-percent of a first polysiloxane that is has a viscosity in a range of 50 centiStokes to 550 Stokes as determined according to ASTM D4283-98; (b) 0.2 to 5 volume-percent of an organoclay; (c) 50-74 volume-percent roundish or crushed thermally conductive fillers including: (i) 5 to 15 volume-percent small thermally conductive fillers having a median particle size in a range of 0.1 to 1.0 micrometers; (ii) 10 to 25 volume-percent medium thermally conductive fillers having a median particle size in a range of 1.1 to 5.0 micrometers; (iii) 25 to 50 volume-percent large thermally conductive fillers having a median particle size in a range of 5.1 to 50 micrometers; and (d) 0 to 5 volume-percent of an alkoxy functional linear polysiloxane different from the first polysiloxane and/or an alkoxy functional linear silane; where volume-percent values are relative to composition volume.

Thermally Conductive Composition Containing Mgo Filler And Methods And Devices In Which Said Composition Is Used

US Patent:
2021040, Dec 30, 2021
Filed:
Dec 29, 2018
Appl. No.:
17/281484
Inventors:
- Midland MI, US
Yan Zheng - Shanghai, CN
Hongyu Chen - Shanghai, CN
Chen Chen - Shanghai, CN
Dorab Bhagwagar - Saginaw MI, US
Darren Hansen - Auburn MI, US
International Classification:
C08L 83/00
C08K 3/22
C08K 5/3417
Abstract:
A highly thermally conductive composition is provided, such composition comprising: (A) An organopolysiloxane composition; (B) a filler treating agent; (C) a thermal stabilizer; and (D) thermally conductive filler mixture, comprising: (D-1) a small-particulate thermally conductive filler having a mean size of up to 1 μm, (D-2) middle-sized filler having a mean size of from 1 to 10 μm, (D-3) large filler having a mean size of larger than 30 μm and comprising at least magnesium oxide.

Thermally Conductive Composition And Methods And Devices In Which Said Composition Is Used

US Patent:
2021033, Oct 28, 2021
Filed:
Nov 7, 2018
Appl. No.:
17/268143
Inventors:
- Midland MI, US
Yan Zheng - Shanghai, CN
Hongyu Chen - Shanghai, CN
Chen Chen - Shanghai, CN
Dorab Bhagwagar - Saginaw MI, US
Darren Hansen - Auburn MI, US
International Classification:
C09K 5/14
C08G 77/20
C08K 13/04
C08K 5/3417
C08K 7/18
C08K 3/22
C08K 3/28
C08K 3/38
F28F 23/00
Abstract:
A highly thermally conductive composition is provided, such composition comprising: (A) An organopolysiloxane composition; (B) a filler treating agent; (C) a thermal stabilizer; and (D) thermally conductive filler mixture, comprising: (D-1) a small-particulate thermally conductive filler having a mean size of up to 3 μm, (D-2) spherical aluminum nitride having a mean size of from 50 to 150 μm, (D-3) boron nitride having a mean size of from 20 to 200 μm.

Sic Crystal And Wafer Cut From Crystal With Low Dislocation Density

US Patent:
2017013, May 18, 2017
Filed:
Jan 30, 2017
Appl. No.:
15/419993
Inventors:
- Midland MI, US
Roman Drachev - Midland MI, US
Darren Hansen - Midland MI, US
Edward Sanchez - Midland MI, US
International Classification:
C30B 23/00
C30B 23/06
C23C 14/54
C23C 14/06
C23C 14/24
C23C 14/26
C30B 23/02
C30B 29/36
Abstract:
A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal.

Sic Crystal And Wafer Cut From Crystal With Low Dislocation Density

US Patent:
2014022, Aug 7, 2014
Filed:
Oct 18, 2013
Appl. No.:
14/058167
Inventors:
- Midland MI, US
Roman Drachev - Midland MI, US
Darren Hansen - Midland MI, US
Edward Sanchez - Midland MI, US
Assignee:
Dow Corning Corporation - Midland MI
International Classification:
C30B 23/02
C30B 29/36
C30B 23/06
US Classification:
428131, 117109, 118726, 423345
Abstract:
A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal.

Possible Relatives

David M Hansen  Dawn M Hansen  Dayna L Hansen  Deanna K Hansen  Dale E Hansen  Deanne T Hansen  Deb A Hansen  Darren F Johnson  Darren L Johnston  Darren K Jones 

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