David Knuteson resumes & CV records
Resumes
David J Knuteson, Age 643740 Bonnybridge Pl, Ellicott City, MD 21043
David Knuteson Phones & Addresses
Ellicott City, MD
5613 Columbia Rd, Columbia, MD 21044 (410) 884-9460
110 Court St, Canfield, OH 44406
1210 Grandeview Blvd, Huntsville, AL 35824 (256) 772-6500
Aurora, OH
Newport News, VA
Williamsburg, VA
Poquoson, VA
North, VA
Antioch, TN
Valley Stream, NY
8123 Brightridge Ct, Ellicott City, MD 21043 (410) 796-4457
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David J Knuteson
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Work
Position:
Professional/Technical
Education
Degree:
Associate degree or higher
Mentions for David J Knuteson
Publications & IP owners
Us Patents
Nuclear Radiation Detection System
US Patent:
7525099, Apr 28, 2009
Filed:
Jan 30, 2007
Appl. No.:
11/699335
Inventors:
Narsingh Bahadur Singh - Ellicott City MD, US
Aaron A. Pesetski - Gamrills MD, US
Andre Berghmans - Owing Mills MD, US
Brian P. Wagner - Baltimore MD, US
David Kahler - Arbutus MD, US
David J. Knuteson - Columbia MD, US
Darren Thomson - Ellicott City MD, US
Aaron A. Pesetski - Gamrills MD, US
Andre Berghmans - Owing Mills MD, US
Brian P. Wagner - Baltimore MD, US
David Kahler - Arbutus MD, US
David J. Knuteson - Columbia MD, US
Darren Thomson - Ellicott City MD, US
Assignee:
Northrop Grumman Systems Corporation - Los Angeles CA
International Classification:
G01J 1/42
US Classification:
250372
Abstract:
A nuclear radiation detection system using narrowband UV crystal filters is disclosed. Since the photons produced during the decay of β- and γ-radiation can be detected in the spectral range of about 200-350 nm (the ultraviolet range), UV filter based photo sensors are utilized for detection. The nuclear radiation detection system comprises an optical assembly capable of focusing on a source of radiation, a UV filter assembly having a narrowband UV crystal filter and positioned to receive light transmitted through the optical assembly, and a light detector positioned to receive light transmitted through the UV filter assembly. The narrowband UV crystal filter is fabricated from crystals selected from the group consisting of nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate. The nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate may be doped to achieve even narrower band filter. The radiation detection system can be used to monitor contamination in a nuclear plant or a nuclear waste dump site.
Semiconductor Heterojunction Devices Based On Sic
US Patent:
7683400, Mar 23, 2010
Filed:
Jun 26, 2006
Appl. No.:
11/474398
Inventors:
Narsingh B. Singh - Ellicott City MD, US
Brian P. Wagner - Baltimore MD, US
David J. Knuteson - Linthicum MD, US
Michael E. Aumer - Laurel MD, US
Andre Berghmans - Owing Mills MD, US
Darren Thomson - Ellicott City MD, US
David Kahler - Arbutus MD, US
Brian P. Wagner - Baltimore MD, US
David J. Knuteson - Linthicum MD, US
Michael E. Aumer - Laurel MD, US
Andre Berghmans - Owing Mills MD, US
Darren Thomson - Ellicott City MD, US
David Kahler - Arbutus MD, US
Assignee:
Northrop Grumman Systems Corporation - Los Angeles CA
International Classification:
H01L 29/08
US Classification:
257194, 257 12, 257 19, 257 24, 257 76, 257 77, 257190, 257191, 257192, 257195, 257E27012, 257E29246, 257E29247, 257E29248, 257E29249, 257E29251, 257E29252
Abstract:
A SiMC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC SiMC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).
Semiconductor Devices That Include Germanium Nanofilm Layer Disposed Within Openings Of Silicon Dioxide Layer
US Patent:
7737534, Jun 15, 2010
Filed:
Jun 10, 2008
Appl. No.:
12/136193
Inventors:
Sean R. McLaughlin - Severn MD, US
Narsingh Bahadur Singh - Ellicott City MD, US
Brian Wagner - Baltimore MD, US
Andre Berghmans - Owing Mills MD, US
David J. Knuteson - Ellicott City MD, US
David Kahler - Arbutus MD, US
Anthony A. Margarella - Columbia MD, US
Narsingh Bahadur Singh - Ellicott City MD, US
Brian Wagner - Baltimore MD, US
Andre Berghmans - Owing Mills MD, US
David J. Knuteson - Ellicott City MD, US
David Kahler - Arbutus MD, US
Anthony A. Margarella - Columbia MD, US
Assignee:
Northrop Grumman Systems Corporation - Los Angeles CA
International Classification:
H01L 29/868
US Classification:
257656, 257E29085, 257E29336, 977774
Abstract:
A process is provided for fabricating a semiconductor device having a germanium nanofilm layer that is selectively deposited on a silicon substrate in discrete regions or patterns. A semiconductor device is also provided having a germanium film layer that is disposed in desired regions or having desired patterns that can be prepared in the absence of etching and patterning the germanium film layer. A process is also provided for preparing a semiconductor device having a silicon substrate having one conductivity type and a germanium nanofilm layer of a different conductivity type. Semiconductor devices are provided having selectively grown germanium nanofilm layer, such as diodes including light emitting diodes, photodetectors, and like. The method can also be used to make advanced semiconductor devices such as CMOS devices, MOSFET devices, and the like.
High Dielectric Capacitor Materials And Method Of Their Production
US Patent:
7830644, Nov 9, 2010
Filed:
Mar 5, 2007
Appl. No.:
11/713783
Inventors:
Narsingh B. Singh - Ellicott City MD, US
John J. Talvacchio - Ellicott City MD, US
Marc Sherwin - Catonsville MD, US
Andre Berghmans - Owing Mills MD, US
David J. Knuteson - Columbia MD, US
David Kahler - Arbutus MD, US
Brian Wagner - Baltimore MD, US
John D. Adam - Millersville MD, US
John J. Talvacchio - Ellicott City MD, US
Marc Sherwin - Catonsville MD, US
Andre Berghmans - Owing Mills MD, US
David J. Knuteson - Columbia MD, US
David Kahler - Arbutus MD, US
Brian Wagner - Baltimore MD, US
John D. Adam - Millersville MD, US
Assignee:
Northop Grumman Systems Corporation - Los Angeles CA
International Classification:
H01G 4/06
H01G 4/005
H01G 4/005
US Classification:
361311, 361303
Abstract:
Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCuTiOor LaGaSiO. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e. g. capacitors.
Semiconductor Heterojunction Devices Based On Sic
US Patent:
7855108, Dec 21, 2010
Filed:
Feb 26, 2010
Appl. No.:
12/713753
Inventors:
Narsingh B. Singh - Ellicott City MD, US
Brian P. Wagner - Baltimore MD, US
David J. Knuteson - Linthicum MD, US
Michael E. Aumer - Laurel MD, US
Andre Berghmans - Owing Mills MD, US
Darren Thomson - Ellicott City MD, US
David Kahler - Arbutus MD, US
Brian P. Wagner - Baltimore MD, US
David J. Knuteson - Linthicum MD, US
Michael E. Aumer - Laurel MD, US
Andre Berghmans - Owing Mills MD, US
Darren Thomson - Ellicott City MD, US
David Kahler - Arbutus MD, US
Assignee:
Northrop Grumman Systems Corporation - Los Angeles CA
International Classification:
H01L 21/338
US Classification:
438172, 438167, 438191, 438604, 438606, 257E21403, 257E21407
Abstract:
A SiMC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC SiMC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).
Method Of Producing Large Area Sic Substrates
US Patent:
7888248, Feb 15, 2011
Filed:
Jul 13, 2007
Appl. No.:
11/826278
Inventors:
Narsingh Bahadur Singh - Ellicott City MD, US
Brian P. Wagner - Baltimore MD, US
David J. Knuteson - Columbia MD, US
David Kahler - Arbutus MD, US
Andre E. Berghmans - Owing Mills MD, US
Michael Aumer - Raleigh NC, US
Jerry W. Hedrick - Arnold MD, US
Marc E. Sherwin - Catonsville MD, US
Michael M. Fitelson - Columbia MD, US
Mark S. Usefara - Baltimore MD, US
Sean McLaughlin - Severn MD, US
Travis Randall - Baltimore MD, US
Thomas J. Knight - Silver Spring MD, US
Brian P. Wagner - Baltimore MD, US
David J. Knuteson - Columbia MD, US
David Kahler - Arbutus MD, US
Andre E. Berghmans - Owing Mills MD, US
Michael Aumer - Raleigh NC, US
Jerry W. Hedrick - Arnold MD, US
Marc E. Sherwin - Catonsville MD, US
Michael M. Fitelson - Columbia MD, US
Mark S. Usefara - Baltimore MD, US
Sean McLaughlin - Severn MD, US
Travis Randall - Baltimore MD, US
Thomas J. Knight - Silver Spring MD, US
Assignee:
Northrop Grumman Systems Corporation - Los Angeles CA
International Classification:
H01L 21/20
US Classification:
438492
Abstract:
A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.
Solid Solution Wide Bandgap Semiconductor Materials
US Patent:
7371282, May 13, 2008
Filed:
Jul 12, 2006
Appl. No.:
11/484691
Inventors:
Narsingh Bahadur Singh - Ellicott City MD, US
Brian Wagner - Baltimore MD, US
Mike Aumer - Laurel MD, US
Darren Thomson - Ellicott City MD, US
David Kahler - Arbutus MD, US
Andre Berghmans - Owing Mills MD, US
David J. Knuteson - Linthicum MD, US
Brian Wagner - Baltimore MD, US
Mike Aumer - Laurel MD, US
Darren Thomson - Ellicott City MD, US
David Kahler - Arbutus MD, US
Andre Berghmans - Owing Mills MD, US
David J. Knuteson - Linthicum MD, US
Assignee:
Northrop Grumman Corporation - Los Angeles CA
International Classification:
C30B 25/12
C30B 25/14
C30B 25/14
US Classification:
117104, 117 68, 117 84, 117 89
Abstract:
A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)(SiC)without any buffer layer is disclosed. The (AIN)(SiC)alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)(SiC)alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.
Solid Solution Wide Bandgap Semiconductor Materials
US Patent:
2008020, Aug 28, 2008
Filed:
Apr 18, 2008
Appl. No.:
12/081636
Inventors:
Narsingh Bahadur Singh - Ellicott City MD, US
Brian Wagner - Baltimore MD, US
Mike Aumer - Laurel MD, US
Darren Thomson - Ellicott City MD, US
David Kahler - Arbutus MD, US
Andre Berghmans - Owing Mills MD, US
David J. Knuteson - Linthicum MD, US
Brian Wagner - Baltimore MD, US
Mike Aumer - Laurel MD, US
Darren Thomson - Ellicott City MD, US
David Kahler - Arbutus MD, US
Andre Berghmans - Owing Mills MD, US
David J. Knuteson - Linthicum MD, US
International Classification:
C01B 33/00
C23C 16/06
C23C 16/06
US Classification:
423324, 42725534, 42725535
Abstract:
A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)(SiC)without any buffer layer is disclosed. The (AIN)(SiC)alloy film can be formed on a SiC substrate by a vapor deposition process using AIN and SiC powder as starting materials. The (AIN)(SiC)alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.
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