Edwin Kan, Age 45Berkeley, CA
Edwin Kan Phones & Addresses
Albany, CA
3985 Nobel Dr, San Diego, CA 92122
Castro Valley, CA
San Jose, CA
Los Angeles, CA
Mentions for Edwin Kan
Publications & IP owners
Us Patents
Nanotube- And Nanocrystal-Based Non-Volatile Memory
US Patent:
7629639, Dec 8, 2009
Filed:
Nov 14, 2006
Appl. No.:
11/599643
Inventors:
Yuegang Zhang - Cupertino CA, US
Udayan Ganguly - Ithaca NY, US
Edwin Kan - Saratoga CA, US
Udayan Ganguly - Ithaca NY, US
Edwin Kan - Saratoga CA, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 27/108
US Classification:
257317, 257321, 257E293, 257E29304
Abstract:
An embodiment is a transistor for non-volatile memory that combines nanocrystal and nanotube paradigm shifts. In particular an embodiment is a transistor-based non-volatile memory element that utilizes a carbon nanotube channel region and nanocrystal charge storage regions. Such a combination enables a combination of low power, low read and write voltages, high charge retention, and high bit density. An embodiment further exhibits a large memory window and a single-electron drain current.
Transistor With Floating Gate And Electret
US Patent:
7960776, Jun 14, 2011
Filed:
Sep 27, 2007
Appl. No.:
11/862867
Inventors:
Myongseob Kim - Pleasanton CA, US
Nick Yu-Min Shen - Hsin-Chu County, TW
Chungho Lee - Ithaca NY, US
Edwin Chihchuan Kan - Ithaca NY, US
Nick Yu-Min Shen - Hsin-Chu County, TW
Chungho Lee - Ithaca NY, US
Edwin Chihchuan Kan - Ithaca NY, US
Assignee:
Cornell Research Foundation, Inc. - Ithaca NY
International Classification:
H01L 29/76
US Classification:
257314, 257315, 257316, 257253
Abstract:
A sensor includes a field effect transistor having a source, drain, a control gate and floating gate, wherein the floating gate has an extended portion extending away from the control gate. A sensing gate is capacitively coupled to the extended portion of the floating gate. A polymer electret sensing coating is electrically coupled to the sensing gate.
Nanotube- And Nanocrystal-Based Non-Volatile Memory
US Patent:
7262991, Aug 28, 2007
Filed:
Jun 30, 2005
Appl. No.:
11/174128
Inventors:
Yuegang Zhang - Cupertino CA, US
Udayan Ganguly - Ithaca NY, US
Edwin Kan - Saratoga CA, US
Udayan Ganguly - Ithaca NY, US
Edwin Kan - Saratoga CA, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
G11C 11/34
US Classification:
36518501, 257315, 257316, 257 9, 257E5104, 365151
Abstract:
An embodiment is a transistor for non-volatile memory that combines nanocrystal and nanotube paradigm shifts. In particular an embodiment is a transistor-based non-volatile memory element that utilizes a carbon nanotube channel region and nanocrystal charge storage regions. Such a combination enables a combination of low power, low read and write voltages, high charge retention, and high bit density. An embodiment further exhibits a large memory window and a single-electron drain current.
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