Ellen M Meeks, Age 614592 Country Ln, Livermore, CA 94550

Ellen Meeks Phones & Addresses

4592 Country Ln, Livermore, CA 94550 (925) 443-0223

3935 Princeton Way, Livermore, CA 94550 (925) 443-0223

Hamden, CT

Pleasanton, CA

Charlemont, MA

Mentions for Ellen M Meeks

Ellen Meeks resumes & CV records

Resumes

Ellen Meeks Photo 33

Vice President, Engineering

Location:
San Francisco, CA
Industry:
Computer Software
Work:
Ansys, Inc.
Director of Development, Reaction Design
Reaction Design
Vice President, Engineering
Sandia National Laboratories 1987 - 1998
Principal Member of Technical Staff
Education:
Stanford University 1989 - 1994
Doctorates, Doctor of Philosophy, Mechanical Engineering
Rensselaer Polytechnic Institute 1985 - 1986
Master of Science, Masters, Mechanical Engineering
Swarthmore College 1981 - 1985
Bachelors, Bachelor of Science, Engineering
Skills:
Simulations, Cfd, Software Development, Fortran, Linux, Engineering, High Performance Computing, Software Engineering, Design of Experiments
Ellen Meeks Photo 34

Ellen Meeks

Ellen Meeks Photo 35

Ellen Hesler Meeks

Publications & IP owners

Us Patents

System And Method For Flame Blow-Off Determination

US Patent:
2010033, Dec 30, 2010
Filed:
Feb 23, 2010
Appl. No.:
12/660336
Inventors:
Cheng-Pang Chou - Irvine CA, US
Devin Hodgson - San Diego CA, US
Ellen Meeks - Livermore CA, US
International Classification:
G06G 7/58
G06F 7/60
US Classification:
703 2, 703 12
Abstract:
Systems and Methods for determining flame blow-off conditions are disclosed. These methods provide efficient and reliable tools for determining the lean blow-off conditions for a variety of combustion system. By utilizing localized characteristics within a flame-holding region a user is enabled to assess the likelihood of flame blow-off with fine granularity within a combustor. The flame blow-out determination may be carried out with the aid of an output representation that provides a contour of likely blow-off cells within a combustor region.

Sealable Stagnation Flow Geometries For The Uniform Deposition Of Materials And Heat

US Patent:
6242049, Jun 5, 2001
Filed:
Sep 8, 1994
Appl. No.:
8/302155
Inventors:
Kevin F. McCarty - Livermore CA
Robert J. Kee - Livermore CA
Andrew E. Lutz - Alamo CA
Ellen Meeks - Livermore CA
Assignee:
Sandia Corporation - Livermore CA
International Classification:
B05D 108
US Classification:
427446
Abstract:
The present invention employs a constrained stagnation flow geometry apparatus to achieve the uniform deposition of materials or heat. The present invention maximizes uniform fluxes of reactant gases to flat surfaces while minimizing the use of reagents and finite dimension edge effects. This results, among other things, in large area continuous films that are uniform in thickness, composition and structure which is important in chemical vapor deposition processes such as would be used for the fabrication of semiconductors.

NOTICE: You may not use PeopleBackgroundCheck or the information it provides to make decisions about employment, credit, housing or any other purpose that would require Fair Credit Reporting Act (FCRA) compliance. PeopleBackgroundCheck is not a Consumer Reporting Agency (CRA) as defined by the FCRA and does not provide consumer reports.