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Emily Linehan, Age 45Scottsdale, AZ

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Known as:
Emily D Burg Emily C Burg Emily D Bung Emily D Burq
Related to:
Emily Burg

Emily Linehan Phones & Addresses

Scottsdale, AZ

Kamas, UT

Costa Mesa, CA

Folsom, CA

Gold River, CA

Roseville, CA

Mountain View, CA

Larkspur, CA

San Francisco, CA

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Mentions for Emily Linehan

Emily Linehan resumes & CV records

Resumes

Emily Linehan Photo 15

Ceo, Esthetician, Skin Care Formulator

Location:
Scottsdale, AZ
Work:
Emme Diane
Ceo, Esthetician, Skin Care Formulator
Emily Linehan Photo 16

Design Engineer At On Semiconductor

Position:
Design Engineer at On Semiconductor
Location:
United States
Industry:
Semiconductors
Work:
On Semiconductor
Design Engineer

Publications & IP owners

Us Patents

Semiconductor Filter Structure And Method Of Manufacture

US Patent:
2007029, Dec 20, 2007
Filed:
Jun 16, 2006
Appl. No.:
11/454387
Inventors:
Sudhama Shastri - Phoenix AZ, US
Ryan Hurley - Gilbert AZ, US
Yenting Wen - Chandler AZ, US
Emily M. Linehan - Gilbert AZ, US
Mark A. Thomas - Seremban, MY
Earl D. Fuchs - Phoenix AZ, US
International Classification:
H01L 29/00
US Classification:
257532, 257533
Abstract:
In one embodiment, a split well region of one conductivity type is formed in semiconductor substrate of an opposite conductivity type. The split well region forms one plate of a floating capacitor and an electrode of a transient voltage suppression device.

Electronic Device Including A Transistor Having Structures With Different Characteristics

US Patent:
2020024, Jul 30, 2020
Filed:
Apr 13, 2020
Appl. No.:
16/847013
Inventors:
- Phoenix AZ, US
Kirk K. Huang - Chandler AZ, US
Prasad Venkatraman - Gilbert AZ, US
Emily M. Linehan - Gilbert AZ, US
Zia Hossain - Tempe AZ, US
Assignee:
Semiconductor Components Industries, LLC - Phoenix AZ
International Classification:
H01L 27/02
H01L 29/40
H01L 29/06
H01L 29/08
H01L 29/423
H01L 29/78
H01L 27/088
H01L 29/10
Abstract:
An electronic device can include a transistor having a gate electrode, a first portion, and a second portion, wherein along the gate electrode, the first portion of the transistor has a first gate-to-drain capacitance and a first gate-to-source capacitance, the second portion of the transistor has a second gate-to-drain capacitance and a second gate-to-source capacitance, and a ratio of the first gate-to-drain capacitance to the first gate-to-source capacitance is less than a ratio of the second gate-to-drain capacitance to the second gate-to-source capacitance.

Electronic Device Including A Transistor Having Structures With Different Characteristics

US Patent:
2019006, Feb 28, 2019
Filed:
Aug 16, 2018
Appl. No.:
16/104039
Inventors:
- Phoenix AZ, US
Kirk K. HUANG - Chandler AZ, US
Prasad VENKATRAMAN - Gilbert AZ, US
Emily M. LINEHAN - Gilbert AZ, US
Zia HOSSAIN - Tempe AZ, US
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC - Phoenix AZ
International Classification:
H01L 27/02
H01L 29/10
H01L 29/78
H01L 29/423
H01L 29/08
H01L 27/088
Abstract:
An electronic device can include a transistor having a gate electrode, a first portion, and a second portion, wherein along the gate electrode, the first portion of the transistor has a first gate-to-drain capacitance and a first gate-to-source capacitance, the second portion of the transistor has a second gate-to-drain capacitance and a second gate-to-source capacitance, and a ratio of the first gate-to-drain capacitance to the first gate-to-source capacitance is less than a ratio of the second gate-to-drain capacitance to the second gate-to-source capacitance.

Possible Relatives

Dennis R Linehan  Donald J Linehan  Erin K Linehan  Gerald J Linehan  Geraldine M Linehan  James F Linehan  Jeff L Linehan  Emily S Johnston  Emily P Stanford  Emily Stanton 

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