Eric W Hermanson Deceased5000 Gulfgate Ln, Saint James City, FL 33956

7170067, Jan 30, 2007

Mar 30, 2005

11/093930

Anthony Renau - W. Newbury MA, US
Eric Hermanson - Georgetown MA, US
Joseph C. Olson - Beverly MA, US
Gordon Angel - Salem MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01J 49/00

250397, 25049221, 324 713

The present invention provides a combined electrostatically suppressed Faraday and energy contamination monitor and related methods for its use. The apparatus of the present invention is capable of selectively measuring two properties of an ion beam, including, for example, a current and a level of energy contamination in a decelerated ion beam. A first aspect of the invention provides an ion beam measurement apparatus comprising an aperture for receiving the ion beam, a negatively biased electrode disposed adjacent to the aperture, a positively biased electrode disposed adjacent to the negatively biased electrode, a selectively biased electrode disposed adjacent to the positively biased electrode, and a collector, wherein the selectively biased electrode may selectively be negatively biased or positively biased.

7202483, Apr 10, 2007

Apr 5, 2005

11/099119

Joseph C. Olson - Beverly MA, US
Eric D. Hermanson - Georgetown MA, US
Rosario Mollica - Wilmington MA, US
Paul J. Murphy - Reading MA, US

G01K 1/08
H01J 3/14

250397, 25049221

An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal having a first signal component representative of the first feature and a second signal component representative of the second feature. The first and second signal components and corresponding positions of the flag are representative of an angle of the ion beam in a direction orthogonal to the translation path. The sensing device may be a two-dimensional array of beam current sensors. The system may provide measurements of horizontal and vertical beam angles while translating the flag in only one direction.

7250617, Jul 31, 2007

Feb 11, 2005

11/056445

Anthony Renau - West Newbury MA, US
Joseph C. Olson - Beverly MA, US
Eric Hermanson - Georgetown MA, US
Gordon C. Angel - Salem MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01J 37/08

25049221, 250251, 2504922, 250397

An ion beam neutral detector system, an ion implanter system including the detector system and a method of detecting ion beam neutrals that ensures an ion implant is meeting contamination requirements are disclosed. The detector includes an energy contamination monitor positioned with in an ion implanter system. A method of the invention includes implanting the workpiece using an ion beam, and periodically detecting ion beam neutrals in the ion beam such that adjustments to the ion implanter system can be made for optimization.

7394073, Jul 1, 2008

Jan 20, 2006

11/336466

James J. Cummings - Wilmington MA, US
Joseph Olson - Beverly MA, US
Arthur H. Clough - Hardwick MA, US
Eric Hermanson - Georgetown MA, US
Rosario Mollica - Wilmington MA, US
Paul J. Murphy - Reading MA, US
Mark Donahue - Malden MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

G01K 1/08

250397, 25049221, 250396 R, 2504911, 2504921, 2504923

An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal in response to the detected ion beam. The sensor signal and corresponding positions of the flag are representative of a vertical beam angle of the ion beam in a vertical plane. The sensing device may include a mask and a mechanism to translate the mask in order to define a beam current sensor on a portion of an associated Faraday sensor.

7402816, Jul 22, 2008

Nov 17, 2005

11/281175

Anthony Renau - West Newbury MA, US
Donna L. Smatlak - Belmont MA, US
James Buff - Brookline NH, US
Eric Hermanson - Georgetown MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01J 1/50

250396ML, 25049221, 2504911, 250396 R, 250281, 335210, 335213

One or more electron sources are utilized to inject electrons into an ion beam being transported between the polepieces of a magnet. In some embodiments, the electron sources are located in cavities in one or both polepieces of the magnet. In other embodiments, a radio frequency or microwave plasma flood gun is located in a cavity in at least one of the polepieces or between the polepieces.

7476878, Jan 13, 2009

Dec 6, 2006

11/567522

Russell J. Low - Rowley MA, US
Jonathan Gerald England - Horsham, GB
Stephen E. Krause - Ipswich MA, US
Eric D. Hermanson - Georgetown MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01J 37/317

25049221

Techniques for reducing effects of photoresist outgassing are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for reducing effects of photoresist outgassing in an ion implanter. The apparatus may comprise a drift tube located between an end-station and an upstream beamline component. The apparatus may also comprise a first variable aperture between the drift tube and the end-station. The apparatus may further comprise a second variable aperture between the drift tube and the upstream beamline component. The first variable aperture and the second variable aperture can be adjusted to facilitate differential pumping.

7482598, Jan 27, 2009

Dec 6, 2006

11/567485

Russell J. Low - Rowley MA, US
Jonathan Gerald England - Horsham, GB
Stephen E. Krause - Ipswich MA, US
Eric D. Hermanson - Georgetown MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01J 37/317

250396R, 25049221

Techniques for preventing parasitic beamlets from affecting ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for preventing parasitic beamlets from affecting ion implantation. The apparatus may comprise a controller that is configured to scan a spot beam back and forth, thereby forming an ion beam spanning a predetermined width. The apparatus may also comprise an aperture mechanism that, if kept stationary, allows the spot beam to pass through. The apparatus may further comprise a synchronization mechanism, coupled to the controller and the aperture mechanism, that is configured to cause the aperture mechanism to move in synchronization with the scanned spot beam, allowing the scanned spot beam to pass through but blocking one or more parasitic beamlets associated with the spot beam.

7576337, Aug 18, 2009

Jan 5, 2007

11/620595

Piotr Lubicki - Peabody MA, US
Russell Low - Rowley MA, US
Steve Krause - Ipswich MA, US
Eric Hermanson - Georgetown MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01J 37/08

2504921, 2504922, 25049222, 2504923, 31511181, 31511191, 315200 R, 315205, 427523, 21912121, 363 17, 200 21 R

A power supply system for an ion implantation system. In one particular exemplary embodiment, the system may be realized as a power supply system that includes a low frequency power inverter, a stack driver and a high voltage power generation unit that receives source power from the power inverter. The high voltage generation unit may include a high voltage transformer for providing an output power that is multiplied to a desired output level and delivered to an input terminal of an ion beam accelerator. The power supply system may also include a dielectric enclosure that encases at least a portion of the high voltage power generation unit, thereby preventing variation in the break down strength of the internal components.