Eric J Mendel, Age 5717 Amanda Ct, Cortlandt Manor, NY 10567

4435247, Mar 6, 1984

Mar 10, 1983

6/473938

Jagtar S. Basi - Fishkill NY
Eric Mendel - Poughkeepsie NY

International Business Machines Corporation - Armonk NY

B44C 122
C03C 1500
C03C 2506

156636

A method for the chemical-mechanical polishing of titanium carbide surfaces to a high degree of perfection is described. The titanium carbide surfaces are continuously wetted with a water slurry containing a soft abrasive material. The continuously wiping of the titanium carbide surface is accomplished with a firm surface using pressure while maintaining a relative movement between the titanium carbide surface and the firm surface to remove the water reacted titanium carbide product from the high points of the titanium carbide surface. This method is continued until a high degree of perfection of the surface is accomplished. The slurry is typically composed of colloidal silicon dioxide dispersed in water. The titanium carbide surface can also include an aluminum oxide component. Where aluminum oxide is present it is preferred to have about 60 to 80% aluminum oxide and 40 to 20% titanium carbide by weight in the surface structure.

4944836, Jul 31, 1990

Oct 28, 1985

6/791860

Klaus D. Beyer - Poughkeepsie NY
William L. Guthrie - Poughkeepsie NY
Stanley R. Makarewicz - New Windsor NY
Eric Mendel - Poughkeepsie NY
William J. Patrick - Newburgh NY
Kathleen A. Perry - Lagrangeville NY
William A. Pliskin - Poughkeepsie NY
Jacob Riseman - Poughkeepsie NY
Paul M. Schaible - Poughkeepsie NY
Charles L. Standley - Wappingers Falls NY

International Business Machines Corporation - Armonk NY

H01L 21304
H01L 21306

156645

A method is disclosed for producing coplanar metal/insulator films on a substrate according to a chem-mech polishing technique. In one example, a substrate having a patterned insulating layer of dielectric material thereon, is coated with a layer of metal. The substrate is then placed in a parallel polisher and the metal is removed elsewhere except in the holes where it is left intact. This is made possible through the use of an improved selective slurry which removes the metal much faster than the dielectric material. The insulating layer may then be used as an automatic etch stop barrier. In a second example a substrate having a patterned metallic layer is coated with an insulating layer and then subjected to chem-mech polishing. The structure is coplanarized by the chem-mech removal of the insulating material from the high points of the structure at a faster rate than from the lower points. Optional etch stop layers also may be used.

T154023, May 7, 1985

Apr 23, 1984

6/603263

Jagtar S. Basi - Fishkill NY
Eric Mendel - Poughkeepsie NY

H01L 21306

156636

A method for the chemical-mechanical polishing of amorphous aluminum oxide surfaces to a high degree of perfection is described. The aluminum oxide surfaces are continuously wetted with a water-citric acid slurry containing a soft abrasive material. The continuously wiping of the aluminum oxide surface is accomplished with a firm surface using pressure while maintaining a relative movement between the aluminum oxide surface and the firm surface to remove the water reacted aluminum oxide product from the high points of the aluminum oxide surface. This method is continued until a high degree of perfection of the surface is accomplished. The slurry is typically composed of colloidal silicon dioxide dispersed in water containing citric acid.

4671851, Jun 9, 1987

Oct 28, 1985

6/791861

Klaus D. Beyer - Poughkeepsie NY
James S. Makris - Wappingers Falls NY
Eric Mendel - Poughkeepsie NY
Karen A. Nummy - Newburgh NY
Seiki Ogura - Hopewell Junction NY
Jacob Riseman - Poughkeepsie NY
Nivo Rovedo - Poughquag NY

International Business Machines Corporation - Armonk NY

H01L 21302

156645

A chemical-mechanical (chem-mech) method for removing SiO. sub. 2 protuberances at the surface of a silicon chip, such protuberances including "bird's heads". A thin etch stop layer of Si. sub. 3 N. sub. 4 is deposited onto the wafer surface, which is then chem-mech polished with a SiO. sub. 2 water based slurry. The Si. sub. 3 N. sub. 4 acts as a polishing or etch stop barrier layer only on the planar portions of the wafer surface. The portions of the Si. sub. 3 N. sub. 4 layer located on the top and at the sidewalls of the "bird's heads" and the underlying SiO. sub. 2 protuberances are removed to provide a substantially planar integrated structure.