Eric J Mendel, Age 50Cortlandt Manor, NY

Eric Mendel Phones & Addresses

Cortlandt Manor, NY

404 73Rd St, New York, NY 10021 (212) 535-7874

145 67Th St, New York, NY 10023

Great Falls, VA

10A Olde Willow Way, Briarcliff Manor, NY 10510

Long Beach, NY

Poultney, VT

Port Washington, NY

Fair Haven, VT

502 Park Ave APT 18E, New York, NY 10022

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Social networks

Eric J Mendel
Eric J Mendel

Linkedin

Work

Company: Jobexpo international Mar 2002 Position: Senior producer/sales manager

Education

School / High School: UNIVERSITY OF BRIDGEPORT- Bridgeport, CT May 1992

Industries

Staffing and Recruiting

Mentions for Eric J Mendel

Resumes

Resumes

Eric Mendel Photo 1

Eric Mendel

Location:
Greater New York City Area
Industry:
Staffing and Recruiting
Eric Mendel Photo 2

Eric Mendel - Cortlandt Manor, NY

Work:
JOBEXPO INTERNATIONAL Mar 2002 to 2000
Senior Producer/Sales Manager
VENTURE DIRECT - New York, NY Aug 2001 to Dec 2001
National Account Manager
HOTJOBS - New York, NY Apr 2001 to Jul 2001
Account Manager
DOUBLECLICK INC - New York, NY Jun 2000 to Mar 2001
National Account Manager
VENTURE DIRECT - New York, NY May 1999 to Mar 2000
Account Executive
DATAMONITOR - New York, NY Feb 1997 to Jul 1998
Sales Manager
BARRINGTON CAPITAL, LLP - New York, NY Aug 1996 to Feb 1997
Account Executive
DUN & BRADSTREET CORP - New York, NY Feb 1994 to Aug 1996
Information Consultant

Business Records

Name / TitleCompany / ClassificationPhones & Addresses
Eric Mendel
Top Computer Executive Chief Information Officer, Vice President or Director of Management Information Systems or Information Te
Castle Oil Corporation
Airports, Flying Fields, and Airport Terminal...
500 Mamaroneck Ave, Harrison, NY 10528

Publications

US Patents

Method For Polishing Titanium Carbide

US Patent:
4435247, Mar 6, 1984
Filed:
Mar 10, 1983
Appl. No.:
6/473938
Inventors:
Jagtar S. Basi - Fishkill NY
Eric Mendel - Poughkeepsie NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B44C 122
C03C 1500
C03C 2506
US Classification:
156636
Abstract:
A method for the chemical-mechanical polishing of titanium carbide surfaces to a high degree of perfection is described. The titanium carbide surfaces are continuously wetted with a water slurry containing a soft abrasive material. The continuously wiping of the titanium carbide surface is accomplished with a firm surface using pressure while maintaining a relative movement between the titanium carbide surface and the firm surface to remove the water reacted titanium carbide product from the high points of the titanium carbide surface. This method is continued until a high degree of perfection of the surface is accomplished. The slurry is typically composed of colloidal silicon dioxide dispersed in water. The titanium carbide surface can also include an aluminum oxide component. Where aluminum oxide is present it is preferred to have about 60 to 80% aluminum oxide and 40 to 20% titanium carbide by weight in the surface structure.

Chem-Mech Polishing Method For Producing Coplanar Metal/insulator Films On A Substrate

US Patent:
4944836, Jul 31, 1990
Filed:
Oct 28, 1985
Appl. No.:
6/791860
Inventors:
Klaus D. Beyer - Poughkeepsie NY
William L. Guthrie - Poughkeepsie NY
Stanley R. Makarewicz - New Windsor NY
Eric Mendel - Poughkeepsie NY
William J. Patrick - Newburgh NY
Kathleen A. Perry - Lagrangeville NY
William A. Pliskin - Poughkeepsie NY
Jacob Riseman - Poughkeepsie NY
Paul M. Schaible - Poughkeepsie NY
Charles L. Standley - Wappingers Falls NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21304
H01L 21306
US Classification:
156645
Abstract:
A method is disclosed for producing coplanar metal/insulator films on a substrate according to a chem-mech polishing technique. In one example, a substrate having a patterned insulating layer of dielectric material thereon, is coated with a layer of metal. The substrate is then placed in a parallel polisher and the metal is removed elsewhere except in the holes where it is left intact. This is made possible through the use of an improved selective slurry which removes the metal much faster than the dielectric material. The insulating layer may then be used as an automatic etch stop barrier. In a second example a substrate having a patterned metallic layer is coated with an insulating layer and then subjected to chem-mech polishing. The structure is coplanarized by the chem-mech removal of the insulating material from the high points of the structure at a faster rate than from the lower points. Optional etch stop layers also may be used.

Method For Polishing Amorphous Aluminum Oxide

US Patent:
T154023, May 7, 1985
Filed:
Apr 23, 1984
Appl. No.:
6/603263
Inventors:
Jagtar S. Basi - Fishkill NY
Eric Mendel - Poughkeepsie NY
International Classification:
H01L 21306
US Classification:
156636
Abstract:
A method for the chemical-mechanical polishing of amorphous aluminum oxide surfaces to a high degree of perfection is described. The aluminum oxide surfaces are continuously wetted with a water-citric acid slurry containing a soft abrasive material. The continuously wiping of the aluminum oxide surface is accomplished with a firm surface using pressure while maintaining a relative movement between the aluminum oxide surface and the firm surface to remove the water reacted aluminum oxide product from the high points of the aluminum oxide surface. This method is continued until a high degree of perfection of the surface is accomplished. The slurry is typically composed of colloidal silicon dioxide dispersed in water containing citric acid.

Method For Removing Protuberances At The Surface Of A Semiconductor Wafer Using A Chem-Mech Polishing Technique

US Patent:
4671851, Jun 9, 1987
Filed:
Oct 28, 1985
Appl. No.:
6/791861
Inventors:
Klaus D. Beyer - Poughkeepsie NY
James S. Makris - Wappingers Falls NY
Eric Mendel - Poughkeepsie NY
Karen A. Nummy - Newburgh NY
Seiki Ogura - Hopewell Junction NY
Jacob Riseman - Poughkeepsie NY
Nivo Rovedo - Poughquag NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21302
US Classification:
156645
Abstract:
A chemical-mechanical (chem-mech) method for removing SiO. sub. 2 protuberances at the surface of a silicon chip, such protuberances including "bird's heads". A thin etch stop layer of Si. sub. 3 N. sub. 4 is deposited onto the wafer surface, which is then chem-mech polished with a SiO. sub. 2 water based slurry. The Si. sub. 3 N. sub. 4 acts as a polishing or etch stop barrier layer only on the planar portions of the wafer surface. The portions of the Si. sub. 3 N. sub. 4 layer located on the top and at the sidewalls of the "bird's heads" and the underlying SiO. sub. 2 protuberances are removed to provide a substantially planar integrated structure.

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