Eric Pop resumes & CV records
Resumes
Eric William Pop, Age 53998 Alpine Ter UNIT 2, Sunnyvale, CA 94086
Eric Pop Phones & Addresses
998 Alpine Ter UNIT 2, Sunnyvale, CA 94086
4407 65Th Ave, Sarasota, FL 34243 (941) 309-3397
695 Fairmount Ave, Oakland, CA 94611
1040 Mandana Blvd, Oakland, CA 94610 (510) 835-7713
Bradenton, FL
Palmetto, FL
Miami, FL
Coral Springs, FL
Social networks
Eric William Pop
Linkedin
Work
Position:
Professional/Technical
Education
Degree:
Graduate or professional degree
Mentions for Eric William Pop
Publications & IP owners
Us Patents
Multi-Layered Semiconductive Device And Methodology With Polymer And Transition Metal Dichalcogenide Material
US Patent:
2022024, Aug 4, 2022
Filed:
Jun 19, 2020
Appl. No.:
17/619514
Inventors:
- Stanford CA, US
Sam Vaziri - Mountain View CA, US
Eric Pop - Palo Alto CA, US
Sam Vaziri - Mountain View CA, US
Eric Pop - Palo Alto CA, US
International Classification:
H01L 21/02
H01L 29/40
H01L 29/417
H01L 29/40
H01L 29/417
Abstract:
In certain examples, methods and semiconductor structures are directed to multilayered structures including TMD (transition metal dichalcogenide material or TMD-like material and a polymer-based layer which is characterized as exhibiting flexibility. A first layer including a TMD-based material (e.g., an atomic-thick layer including TMD) or TMD-like material is provided or grown on a surface which in certain instances may be a rigid platform or substrate. A plurality of electrodes are provided on or as part of the first layer, and another layer or film including polymer is applied to cover the first layer and the electrodes. The other layer is integrated with the TMD material or TMD-like material and the first layer, and the other layer provides a flexible substrate such as when released from the exemplary rigid platform or substrate.
Graphene-Inserted Phase Change Memory Device And Method Of Fabricating The Same
US Patent:
2016027, Sep 22, 2016
Filed:
Jan 29, 2016
Appl. No.:
15/011199
Inventors:
- Suwon-si, KR
- Palo Alto CA, US
Aditya Sood - Palo Alto CA, US
Eric Pop - Palo Alto CA, US
Kenneth E. Goodson - Palo Alto CA, US
Scott Fong - Palo Alto CA, US
Seunghyun Lee - Palo Alto CA, US
Christopher M. Neumann - Palo Alto CA, US
Mehdi Asheghi - Palo Alto CA, US
- Palo Alto CA, US
Aditya Sood - Palo Alto CA, US
Eric Pop - Palo Alto CA, US
Kenneth E. Goodson - Palo Alto CA, US
Scott Fong - Palo Alto CA, US
Seunghyun Lee - Palo Alto CA, US
Christopher M. Neumann - Palo Alto CA, US
Mehdi Asheghi - Palo Alto CA, US
International Classification:
H01L 45/00
Abstract:
Provided is a phase change memory device including a graphene layer inserted between a lower electrode into which heat flows and a phase change material layer, to prevent the heat from being diffused to an outside so as to efficiently transfer the heat to the phase change material layer, and a method of fabricating the phase change memory device. The phase change memory device includes a lower electrode; an insulating layer formed to enclose the lower electrode; a graphene layer formed on the lower electrode; a phase change material layer formed on the graphene layer and the insulating layer; and an upper electrode formed on the phase change material layer. Since a phase of the phase change material layer is changed at a small amount of driving current, the phase change memory device is fabricated to have a high driving speed and a high integration.
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