Eric A Schiff, Age 74215 Ridgecrest Rd, Syracuse, NY 13214

8471170, Jun 25, 2013

May 1, 2008

12/113451

Xuegeng Li - Sunnyvale CA, US
Christopher Alcantara - San Jose CA, US
Maxim Kelman - Mountain View CA, US
Elena Rogojina - Los Altos CA, US
Eric Schiff - DeWitt NY, US
Mason Terry - Redwood City CA, US
Karel Vanheusden - Los Altos CA, US

Innovalight, Inc. - Sunnyvale CA

B23K 10/00
H01J 7/24

21912136, 21912137, 21912148, 31511151, 75 1019, 427212

A plasma processing apparatus for producing a set of Group IV semiconductor nanoparticles from a precursor gas is disclosed. The apparatus includes an outer dielectric tube, the outer tube including an outer tube inner surface and an outer tube outer surface, wherein the outer tube inner surface has an outer tube inner surface etching rate. The apparatus also includes an inner dielectric tube, the inner dielectric tube including an inner tube outer surface, wherein the outer tube inner surface and the inner tube outer surface define an annular channel, and further wherein the inner tube outer surface has an inner tube outer surface etching rate. The apparatus further includes a first outer electrode, the first outer electrode having a first outer electrode inner surface disposed on the outer tube outer surface. The apparatus also includes a first central electrode, the first central electrode being disposed inside the inner dielectric tube, the first central electrode further configured to be coupled to the first outer electrode when a first RF energy source is applied to one of the first outer electrode and the first central electrode; and a first reaction zone defined between the first outer electrode and the central electrode.

2008025, Oct 16, 2008

Apr 1, 2008

12/060528

Mason Terry - Redwood City CA, US
Malcolm Abbott - Sunnyvale CA, US
Maxim Kelman - Mountain View CA, US
Andreas Meisel - Redwood City CA, US
Dmitry Poplavskyy - San Jose CA, US
Eric Schiff - DeWitt NY, US

H01L 21/208

438502, 257E21115

A method for producing a Group IV semiconductor thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber, wherein the chamber further has a chamber pressure. The method further includes depositing a nanoparticle ink on the substrate, the nanoparticle ink including set of Group IV semiconductor nanoparticles and a solvent, wherein each nanoparticle of the set of Group IV semiconductor nanoparticles includes a nanoparticle surface, wherein a layer of Group IV semiconductor nanoparticles is formed. The method also includes striking a hydrogen plasma; and heating the layer of Group IV semiconductor nanoparticles to a fabrication temperature of between about 300 C. and about 1350 C., and between about 1 nanosecond and about 10 minutes; wherein the Group IV semiconductor thin film is formed.

2010031, Dec 16, 2010

Jun 10, 2010

12/797722

Tewodros Asefa - Manlius NY, US
Eric A. Schiff - Syracuse NY, US

SYRACUSE UNIVERSITY - Syracuse NY

H01L 31/0224
C07F 9/40
C07C 45/51
C07C 69/12

136252, 556405, 568388, 560231

A method for synthesizing a phosphonic acid functionalized mesoporous metal oxide material (e.g., silica, titania, alumina, preferably silica material) is provided. Further, a method of using the phosphonic acid functionalized mesoporous silica material as a solid acid catalyst in a pinicole-pinacolone rearrangement reaction, and a method of using a phosphonic acid functionalized mesoporous silica material as a solid acid catalyst in a transesterification reaction is provided. A method for preparing a mesoporous titania film for use in a dye sensitized solar cell is also provided.

2013016, Jul 4, 2013

Dec 26, 2012

13/727087

Syracuse University - Syracuse NY, US
Eric A. Schiff - Dewitt NY, US

SYRACUSE UNIVERSITY - Syracuse NY

H01L 31/0224

136265, 136252

A method of, and apparatus for, increasing the power output of the cell using one or more intrinsic oxide buffer layers to reduce extraneous optical absorption. The intrinsic oxide buffer layers can be, for example: (i) an undoped oxide film that is prepared without intentional doping, (ii) a compensated oxide layer that is prepared using compensating dopants to reduce the conductivity of the oxide film, which can be either undoped or doped, and/or (iii) a passivated oxide layer that is prepared using hydrogen or other atoms to improve the electronic properties of low conductivity oxide films.

2023007, Mar 16, 2023

Sep 14, 2022

17/944548

Brian D. Carter - Baldwinsville NY, US
Eric A. Schiff - Dewitt NY, US

SYRACUSE UNIVERSITY - SYRACUSE NY

A61L 9/20

A torchiere style sanitizing device for disinfecting airborne pathogens while providing aesthetic area lighting. A reversible fan exchanges air between the upper room air plume and the lower air plume by passing the air through a center disinfecting section. The disinfection section may include a linear UV-C light, reflective tube, and light trap positioned at one or both ends of the disinfection section to maximize the exposure of the air to the UV-C light and contain the UV-C light within the device. The device includes a conventional illumination source in an upper shade and can selectively provide one of more of room air flow, room air disinfection, and room illumination.