Francis T Vo, Age 541540 Norman Ave, San Jose, CA 95125

2012019, Aug 2, 2012

Aug 4, 2011

13/197846

Francis Vo - Union City CA, US

B23P 11/00
B29C 65/00
B32B 18/00

29428, 15634529, 15634533, 156294

The invention described here relates to a gas injector for use in a semiconductor etching process or other processes involving aggressive gases or gas plasmas, and more particularly to a gas injector and gas conduits having extended usage life, and exhibiting less etching and particle generation with usage.In most semiconductor manufacturing processes for the etching of a semiconductor wafer, the uppermost portion of a wafer is selectively removed through holes formed in a photoresist layer in the processes' etching step. The etching process is carried out in a sealed chamber into which gases or gas plasmas such as, for example, CF, CHF, O, NF, He, and argon gas are injected. Commonly, a gas supplying device and a gas injector are required to provide the gas(es) to the reaction chambers and to exhaust the gas(es) from the chamber once the process is completed. In addition to being exposed to the gases, these components may be exposed to the plasma etch process. Conventional gas supplying components are made of quartz. However, after repeated use (repeated injection/passage of process gases to chamber) the component parts through which the gas is passed (such as the gas injector tube) may become etched, thereby reducing their structural integrity, and, more significantly, generating particulates that can affect the integrity of the wafer etching process. Either outcome may result in costly defects in the wafers and/or inefficiency of the process. To avoid these and other problems, conventional quartz gas injector tubes are typically replaced frequently (or, typically have a PM lifetime of about 500 Radio Frequency (“RF”) Hrs).

2011006, Mar 17, 2011

Jul 13, 2010

12/835399

Francis Vo - Union City CA, US
Paul Henderson - Philadelphia PA, US

Greene Tweed of Delaware, Inc. - Wilmington DE

B65D 85/00
B31B 3/00

206722, 493 52

The invention provides a wafer boat for housing a semiconductor or a solar wafer that includes at least one wafer support member containing at least one slot capable of receiving at least a portion of a peripheral edge of a wafer, wherein in the wafer support member comprises silicon carbide; and at least one structural member for conveying the wafer boat into and out of a processing device connected to the wafer support member , wherein the structural member is comprised of a ceramic material that is not silicon carbide. Also included are methods of manufacturing a wafer boat having increased durability and/or chip resistance.