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Frank M Dimeo Deceased25 Huron Ave, Worcester, MA 01605
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25 Huron Ave, Worcester, MA 01605 (508) 852-1439
Montgomery Village, MD
Boylston, MA
Annandale, VA
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Us Patents
Cleaning Of Semiconductor Processing Systems
US Patent:
8603252, Dec 10, 2013
Filed:
Apr 26, 2007
Appl. No.:
12/298727
Inventors:
Frank Dimeo - Falls Church VA, US
James Dietz - Allison Park PA, US
W. Karl Olander - Indian Shores FL, US
Robert Kaim - Brookline MA, US
Steven Bishop - Corrales NM, US
Jeffrey W. Neuner - Bethel CT, US
Jose Arno - Brookfield CT, US
Paul J. Marganski - Seymore CT, US
Joseph D. Sweeney - New Milford CT, US
David Eldridge - Liberty Hill TX, US
Sharad Yedave - Danbury CT, US
Oleg Byl - Southbury CT, US
Gregory T. Stauf - Branchburg NJ, US
James Dietz - Allison Park PA, US
W. Karl Olander - Indian Shores FL, US
Robert Kaim - Brookline MA, US
Steven Bishop - Corrales NM, US
Jeffrey W. Neuner - Bethel CT, US
Jose Arno - Brookfield CT, US
Paul J. Marganski - Seymore CT, US
Joseph D. Sweeney - New Milford CT, US
David Eldridge - Liberty Hill TX, US
Sharad Yedave - Danbury CT, US
Oleg Byl - Southbury CT, US
Gregory T. Stauf - Branchburg NJ, US
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
B08B 7/00
US Classification:
134 11, 134 221
Abstract:
A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF, XeF, XeF, NF, IF, IF, SF, CF, F, CF, KrF, Cl, HCl, ClF, ClO, NF, NF, NF, NFH, NHF, HOBr, Br, CF, CF, CF, CHF, CHF, CHF, COF, HF, CHF, CHF, CHF, CHF, CHF, CF, and organochlorides such as COCl, CCl, CHCl, CHCland CHCl.
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