Frank S Stern, Age 795837 Morgan Pl UNIT 103, Stockton, CA 95219

5534713, Jul 9, 1996

May 20, 1994

8/246549

Khaled E. Ismail - Cairo, EG
Frank Stern - Pleasantville NY

International Business Machines Corporation - Armonk NY

H01L 2906

257 24

A method and a layered planar heterostructure comprising one of or both n and p-channel field effect transistors is described incorporating a plurality of semiconductor layers on a semiconductor substrate wherein one layer is silicon or silicon germanium under tensile strain and one layer is silicon germanium under compressive strain whereby n channel field effect transistors may be formed with a silicon or silicon germanium layer under tension and p-channel field effect transistors may be formed with a silicon germanium layer under compression. The plurality of layers may be common to both subsequently formed p and n-channel field effect transistors which may be interconnected to form CMOS circuits. The invention overcomes the problem of forming separate and different layered structures for p and n-channel field effect transistors for CMOS circuitry on ULSI chips.