Ganesh M Sundaram, Age 6365 Nashoba Rd, West Concord, MA 01742

2011031, Dec 22, 2011

Jun 17, 2011

13/162850

Guo Liu - Woburn MA, US
Adam Bertuch - Boston MA, US
Eric W. Deguns - Somerville MA, US
Mark J. Dalberth - Somerville MA, US
Ganesh M. Sundaram - Concord MA, US
Jill Svenja Becker - Cambridge MA, US

Cambridge NanoTech Inc. - Cambridge MA

C23C 16/448
B05C 11/00

42725526, 118695, 118708, 118715, 42725523

An improved precursor vaporization device and method for vaporizing liquid and solid precursors having a low vapor pressure at a desired precursor temperature includes elements and operating methods for injecting an inert gas boost pulse into a precursor container prior to releasing a precursor pulse to a reaction chamber. An improved ALD system and method for growing thin films having more thickness and thickness uniformity at lower precursor temperatures includes devices and operating methods for injecting an inert gas boost pulse into a precursor container prior to releasing a precursor pulse to a reaction chamber and for releasing a plurality of first precursor pulses into a reaction chamber to react with substrates before releasing a different second precursor pulse into the reaction chamber to react with the substrates.

2012006, Mar 15, 2012

Feb 26, 2010

13/203602

Roger R. Coutu - Hooksett NH, US
Jill Svenja Becker - Cambridge MA, US
Ganesh M. Sundaram - Concord MA, US
Eric W. Deguns - Somerville MA, US

Cambridge NanoTech Inc. - Cambridge MA

C23C 16/455

4272481, 118715

A gas deposition system () configured as a dual-chamber “tower” includes a frame () for supporting two reaction chamber assemblies (), one vertically above the other. Each chamber assembly () includes an outer wall assembly surrounding a hollow chamber () sized to receive a single generation 4.5 (GEN 4.5) glass plate substrate through a load port. The substrate is disposed horizontally inside the hollow chamber () and the chamber assembly () includes removable and cleanable triangular shaped input () and output () plenums disposed external to the hollow chamber () and configured to produce substantially horizontally directed laminar gas flow over a top surface of the substrate. Each chamber includes a cleanable and removable chamber liner assembly () disposed inside the hollow chamber () to contain precursor gases therein thereby preventing contamination of chamber outer walls ().

2012014, Jun 7, 2012

Oct 14, 2011

13/273417

Michael J. Sershen - Cambridge MA, US
Ganesh M. Sundaram - Concord MA, US
Roger R. Coutu - Hooksett NH, US
Jill Svenja Becker - Cambridge MA, US
Mark J. Dalberth - Somerville MA, US

Cambridge NanoTech Inc - Cambridge MA

C23C 16/455
C23C 16/458

42725523, 118715, 118729, 42725526, 4272555

An ALD coating system () includes a fixed gas manifold () disposed over a moving substrate with a coating surface of the substrate facing precursor orifice plate (). A gas control system () delivers gas or vapor precursors and inert gas into the fixed gas manifold which directs input gases onto a coating surface of the moving substrate. The gas control system includes a blower () interfaced with the gas manifold which draws gas through the gas manifold to remove unused precursors, inert gas and reaction byproduct from the coating surface. The gas manifold is configured segregate precursor gases at the coating surface to prevent the mixing of dissimilar precursors. The gas manifold may also segregate unused precursor gases in the exhaust system so that the unused precursors can be recovered and reused.

2018021, Aug 2, 2018

Mar 29, 2018

15/940533

- San Jose CA, US
Ganesh Sundaram - Concord MA, US

C23C 16/56
C23C 16/455
C23C 16/30
H01J 37/32
C23C 16/40

Methods of forming 2D metal chalcogenide films using laser-assisted atomic layer deposition are disclosed. A direct-growth method includes: adhering a layer of metal-bearing molecules to the surface of a heated substrate; then reacting the layer of metal-bearing molecules with a chalcogenide-bearing radicalized precursor gas delivered using a plasma to form an amorphous 2D film of the metal chalcogenide; then laser annealing the amorphous 2D film to form a crystalline 2D film of the metal chalcogenide, which can have the form MX or MX, where M is a metal and X is the chalcogenide. An indirect growth method that includes forming an MOfilm is also disclosed.

2017025, Sep 7, 2017

May 18, 2017

15/598763

- San Jose CA, US
Ganesh Sundaram - Concord MA, US
Ritwik Bhatia - Newtonville MA, US

H01L 21/02
B23K 26/03
B23K 26/073
B23K 26/12
B23K 26/122
H01L 21/268
H01L 29/20

Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550 C. and preferable below 350 C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500 C. for less than 12 msec.

2017025, Aug 31, 2017

May 17, 2017

15/597680

- San Jose CA, US
Ganesh Sundaram - Concord MA, US
Ritwik Bhatia - Newtonville MA, US

H01L 21/02
B23K 26/12
B23K 26/122
B23K 26/03
B23K 26/073
H01L 21/268
H01L 29/20

Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550 C. and preferable below 350 C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500 C. for less than 12 msec.

2017007, Mar 16, 2017

Sep 6, 2016

15/257493

- San Jose CA, US
Ganesh Sundaram - Concord MA, US

Ultratech, Inc. - San Jose CA

C23C 16/455
C23C 16/56
C23C 16/48
C23C 16/50

Methods of forming 2D metal chalcogenide films using laser-assisted atomic layer deposition are disclosed. A direct-growth method includes: adhering a layer of metal-bearing molecules to the surface of a heated substrate; then reacting the layer of metal-bearing molecules with a chalcogenide-bearing radicalized precursor gas delivered using a plasma to form an amorphous 2D film of the metal chalcogenide; then laser annealing the amorphous 2D film to form a crystalline 2D film of the metal chalcogenide, which can have the form MX or MX, where M is a metal and X is the chalcogenide. An indirect growth method that includes forming an MOfilm is also disclosed.

2016015, Jun 2, 2016

Jun 25, 2014

14/899552

- San Jose CA, US
Ganesh Sundaram - Concord MA, US
Ritwik Bhatia - Newtonville MA, US

Ultratech, Inc. - San Jose CA

H01L 21/02
C23C 16/56
H01L 21/324

Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550 C. and preferable below 350 C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500 C. for less than 12 msec.