Garth A Brooks Deceased2 Tucahoe Way, Palm Coast, FL 32164

4470874, Sep 11, 1984

Dec 15, 1983

6/561778

Thomas A. Bartush - Wappingers Falls NY
Garth A. Brooks - Wappingers Falls NY
James R. Kitcher - Poughkeepsie NY

International Business Machines Corporation - Armonk NY

B44C 122
C03C 1500
C03C 2506
C23F 102

156643

The planarization of structures having vertical interconnection studs embedded in an insulator layer utilizing a resist layer with dry etching in a CF. sub. 4 ambient for equal etching of resist and the insulation to planarize the insulation, followed by dry etching in essentially a noble gas (argon) ambient for equal etching of the insulator layer and stud metal to desired planarization.

4816112, Mar 28, 1989

Oct 27, 1986

6/923779

Garth A. Brooks - Wappingers Falls NY
Nancy A. Greco - Lagrangeville NY

International Business Machines Corporation - Armonk NY

B44C 122
C03C 1500
C03C 2506
B29C 3700

156628

Disclosed is a process for forming a planarized multilevel ship wiring structure. Starting from a substrate having thereon at least a metal stud serving as vertical wiring between two levels of metallization, a quartz layer is deposited, obtaining a non-planar structure. A thick planarizing photoactive photoresist is applied. The photoresist is converted by silylation process into a silicate having substantially the same etch rate as that of quartz. Silylation is accomplished by, for example, subjecting the resist to a bath of hexamethyldisilazane, hexamethylcyclotrisilazene, octamethylcyclotetrasilazane, N,N,dimethylaminotrimethylsilane or N,N,diethylaminotrimethylsilane, for a period of time determined by the thickness of the resist. Unwanted portions of the silylated resist and quartz are etched back at 1:1 etch rate ratio to the level of the stud.

4867838, Sep 19, 1989

Oct 17, 1988

7/258367

Garth A. Brooks - Wappingers Falls NY
Nancy A. Greco - Lagrangeville NY

International Business Machines Corporation - Armonk NY

B44C 122
C03C 1500
C03C 2506
B29C 3700

156628

Disclosed is a process for forming a planarized multilevel ship wiring structure. Starting from a substrate having thereon at least a metal stud serving as vertical wiring between two levels of metallization, a quartz layer is deposited, obtaining a non-planar structure. A thick planarizing photoactive photoresist is applied. The photoresist is converted by silylation process into a silicate having substantially the same etch rate as that of quartz. Silylation is accomplished by, for example, subjecting to resist to a bath of hexamethyldisilazane, hexamethylcyclotrisilazane, octamethylcyclotetrasilazane, N,N,dimethylaminotrimethylsilane or N,N,diethylaminotrimethylsilane, for a period of time determined by the thickness of the resist. Unwanted portions of the silylated resist and quartz are etched back at 1:1 etch rate ratio to the level of the stud.