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Eugene L Babcock, Age 64Ada, MI

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Known as:
Eugene Babcock Eugene Lloyd Babcock Gene Babcock Jene Babcock Linda Babcock Babcock Babcock
Related to:
Susan Pozzi 71 Marian Pozzi Ronald Pozzi Mary Pozzi David L Bird 54

Eugene Babcock Phones & Addresses

Ada, MI

21845 Heatherwood Ln, Yorba Linda, CA 92887 (714) 693-1365

7301 Monaco St, Miami, FL 33143 (305) 740-9249 (305) 740-9250

Coral Gables, FL

Vista, CA

Placentia, CA

Mentions for Eugene L Babcock

Business & Organization Records

Name / TitleCompany / ClassificationPhones & Addresses
Eugene Babcock
Vice President		 Clinical Diagnostics Division 4300 N Hbr Blvd #A37C, Fullerton, CA 92835
(714) 871-4848
Eugene Babcock
Vice President,Director		 COULTER CORPORATION 11800 SW 147 Ave, Miami, FL 33196
Eugene Babcock
Vice President of Cellular Marketing and Development		 Beckman Coulter 250 S Kraember Blvd, Brea, CA 92821
250 S Kraemer Blvd, Brea, CA 92821
1209 Orange Street  , Wilmington, DE 19801
209 W Washington St, Charleston, WV 25302
(714) 993-5321, (714) 773-8283, (800) 526-3821, (714) 961-3300
Eugene Babcock
President, Vice President		 Coulter Holdings, Inc PO Box 169015, Miami, FL 33116
Eugene Babcock
Vice President, Vpfin		 Coulter Corporation 11800 SW 147 Ave, Miami, FL 33196
11800 S W 147 Ave, Miami, FL 33196
1180 SW 147 Ave M/C32B05, Miami, FL 33196
(305) 380-3800

Publications

Us Patents

Method Of Forming Detector Array Contact Bumps For Improved Lift Off Of Excess Metal

US Patent:
5091288, Feb 25, 1992
Filed:
Oct 27, 1989
Appl. No.:
7/428371
Inventors:
Pierino I. Zappella - Garden Grove CA
Angel A. Pepe - Irvine CA
William R. Fewer - Diamond Bar CA
Eugene J. Babcock - Garden Grove CA
Assignee:
Rockwell International Corporation - El Segundo CA
International Classification:
G03C 516
US Classification:
430311
Abstract:
An improved method of forming metal contact bumps for infrared detector array includes depositing a thick layer of positive organic photoresist, and exposing the entire layer to light. A second, substantially thinner layer of photoresist is then applied, and exposed with a pattern of light corresponding to the contact bumps desired. The photoresist is developed to resolve the pattern in the top thin film, and the underlying thick resist is isotropically developed down to the substrate surface and under a portion of the remaining unexposed top layer. the metal to form the contact bumps is then deposited, preferably by evaporative deposition. The overhanging edges of the top layer of photoresist prevent continuous metal step coverage between the surface of the photoresist layer and the bumps formed on the substrate surface in the cavity. The remaining photoresist is then dissolved, and the metal deposited on the surface of the second layer is readily removed.

Possible Relatives

D L Babcock  Dayton B Babcock  Debra R Babcock  Aaron Babcock  Della L Babcock  Denise L Babcock  Dennis K Babcock  Eugene G Johnson  Eugene F Johnston  Eugene C Stang 

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