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Gerald M Rothberg, Age 94333 River St UNIT 1028, Hoboken, NJ 07030

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Known as:
Gerald Dr Rothberg Gearld Rothberg
Related to:
Janet E Garcia 56 Jeffrey M Chaska 62

Gerald Rothberg Phones & Addresses

Hoboken, NJ

29 Evergreen Dr, Elkview, WV 25071 (304) 549-7904

Philadelphia, PA

New York, NY

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Gerald Rothberg resumes & CV records

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Author

Work:
Geraldrothberg.com
Author
Gerald Rothberg Photo 3

Professor Emeritus

Location:
Hoboken, NJ
Industry:
Higher Education
Work:
Stevens Institute of Technology
Professor Emeritus
Education:
Stevens Institute of Technology

Publications & IP owners

Us Patents

Layered Material Having Properties That Are Variable By An Applied Electric Field

US Patent:
6413659, Jul 2, 2002
Filed:
Aug 15, 2000
Appl. No.:
09/638766
Inventors:
Gerald M. Rothberg - Hoboken NJ, 07030
International Classification:
G11B 566
US Classification:
428692, 257201
Abstract:
A composition of materials that is ferromagnetic and whose properties may be varied by means of an applied electric field and has at least a first and second layer. The first layer may be a substance of the formula III-V, wherein III is at least one element of Group IIIA, and V is at least one of the elements As and Sb and may include other elements of Group VA. The second layer may be a substance of the formula Mn-V, wherein V is at least one of the elements As and Sb present in the first layer. This second layer may be less than approximately 500 nm thick, but thick enough to be ferromagnetic. The first layer and said second layer may be crystalline.

Layered Material Having Properties That Are Variable By An Applied Electric Field

US Patent:
6153318, Nov 28, 2000
Filed:
Apr 30, 1997
Appl. No.:
8/846315
Inventors:
Gerald M. Rothberg - Hoboken NJ
International Classification:
G11B 566
US Classification:
428692
Abstract:
A composition of materials that is ferromagnetic and whose properties may be varied by means of an applied electric field and has at least a first and second layer. The first layer may be a substance of the formula III-V, wherein III is at least one element of Group IIIA, and V is at least one of the elements As and Sb and may include other elements of Group VA. The second layer may be a substance of the formula Mn-V, wherein V is at least one of the elements As and Sb present in the first layer. This second layer may be less than approximately 500 nm thick, but thick enough to be ferromagnetic. The first layer and said second layer may be crystalline.

Possible Relatives

Aaron S Rothberg  Eric P Rothberg  Henry Rothberg  Michael P Rothberg  Paul C Rothberg  Robert I Rothberg  Steven S Rothberg  Gerald S Stamps  Gerald Standley  Gerald C Johnston 

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