Gia Van Pham, Age 641425 Carmine Way, San Jose, CA 95131

2018033, Nov 22, 2018

May 17, 2018

15/982785

- Santa Clara CA, US
Kartik SHAH - Saratoga CA, US
Norman L. TAM - Cupertino CA, US
Matthew SPULLER - Belmont CA, US
Kong Lung Samuel CHAN - Newark CA, US
Elizabeth NEVILLE - Palo Alto CA, US
Preetham RAO - Bangalore, IN
Abhilash J. MAYUR - Salinas CA, US
Gia Pham - San Jose CA, US

H01L 21/67
C23C 16/56
C23C 16/458
C23C 16/455

Embodiments of the disclosure generally relate to a semiconductor processing chamber. In one embodiment, semiconductor processing chamber is disclosed and includes a chamber body having a bottom and a sidewall defining an interior volume, the sidewall having a substrate transfer port formed therein, and one or more absorber bodies positioned in the interior volume in a position opposite of the substrate transfer port.

2017030, Oct 26, 2017

Mar 29, 2017

15/472691

- Santa Clara CA, US
Joung Woo LEE - Singapore, SG
Gia PHAM - San Jose CA, US
Alex GERRARD - San Jose CA, US
Robert C. MCINTOSH - San Jose CA, US

F28F 19/00
H01L 21/67
F28F 23/00

Implementations described herein generally relate to substrate processing equipment and more particularly to methods and compositions for temperature control of substrate processing equipment. In one implementation, a method of cooling a processing chamber component is provided. The method comprises introducing an inert purge gas into a supply reservoir containing a coolant and flowing the treated coolant to a processing chamber component to cool the processing chamber component. The coolant initially comprises deionized water and a water-soluble base.

2015031, Oct 29, 2015

Apr 24, 2014

14/261017

- Santa Clara CA, US
Wolfgang R. ADERHOLD - Cupertino CA, US
Kai NG - San Jose CA, US
Houda GRAOUI - Morgan Hill CA, US
Shankar MUTHUKRISHNAN - San Jose CA, US
Abhilash J. MAYUR - Salinas CA, US
Gia PHAM - San Jose CA, US

H01L 21/02

Embodiments of the present disclosure relate to methods for processing a substrate. In one embodiment, the method includes forming a dielectric layer over a substrate, wherein the dielectric layer has a dielectric value of about 3.9 or greater, heating the substrate to a first temperature of about 600 degrees Celsius or less by a heater of a substrate support disposed within a process chamber, and incorporating nitrogen into the dielectric layer in the process chamber by annealing the dielectric layer at a second temperature between about 650 and about 1450 degrees Celsius in an ambient nitrogen environment, wherein the annealing is performed on the order of millisecond scale.