Gregory F Piatt, Age 66Sandy, OR

2006007, Apr 13, 2006

Oct 12, 2004

10/963255

Bruce Whitefield - Camas WA, US
Gregory Piatt - Welches OR, US
Michael Gatov - Gresham OR, US

B08B 7/04
B08B 3/04

134010000, 134104200, 134104400

An apparatus for cleaning a substrate. A cleaning chamber contacts the substrate with a cleaning solution. The cleaning solution thereby removes contaminants from the substrate and additionally leaches material from the substrate. A gettering chamber receives the cleaning solution, and includes a surface for chemically attracting the leached material and precipitating the leached material at least in part out of the cleaning solution. By removing the leached copper from the cleaning solution In this manner, the various embodiments of the present invention reduce the amount of copper that is available for plating out of the solvent, and therefore reduces the number and size of nodules that can form on the substrate. Thus, the need for other expensive approaches, like chemical replacement or less effective cleaning solvents, is obviated. The aluminum that is preferably used in the plating cell not only has an affinity to collect copper, but it is also known to be compatible with the solvent and substrates, since it is already present in abundance on the substrates themselves.

2006008, Apr 27, 2006

Oct 25, 2004

10/973851

Gregory Piatt - Welches OR, US
Hiroshi Mizuno - Gresham OR, US

C25B 9/00

204279000, 205093000, 205098000

A contact ring for use in electroplating of a substrate material is constructed such that fluid (e.g., electrolyte) is allowed to flow radially away from the axis of a toroidal support ring, thus preventing the trapping of fluids between the substrate and the toroidal support ring. The contact ring is constructed with a series of openings arranged about the circumference of the ring and wherein an electrical contact is placed in the path of each opening so any fluid passing through the opening also passes around the associated electrical contact. Further, the electrical contacts are also placed such that a substrate (e.g., a semiconductor wafer) can be placed inside the support ring so as to electrically contact the electrical contacts. The toroidal support ring has an aerodynamically streamlined cross-section at the openings, such that fluid flows through the openings with reduced aerodynamic drag.

2020032, Oct 15, 2020

Jul 9, 2019

16/506040

- Phoenix AZ, US
David T. PRICE - Gresham OR, US
Akihiro HASEGAWA - Aizuwakamatsu, JP
Derryl ALLMAN - Camas WA, US
Sallie J. HOSE - Gresham OR, US
Kenneth Andrew BATES - Happy Valley OR, US
Gregory Frank PIATT - Sandy OR, US

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC - Phoenix AZ

H01L 49/02
H01L 23/522
H01L 27/146
H01L 21/3213
H01L 21/321

Implementations of capacitors may include: a first electrode having a first side and a second side. The capacitor may also include a silicon nitride (SiN) layer including on the second side of the first electrode. An opening may be included in the silicon nitride layer. The capacitors may include a dielectric layer within the opening of the SiN layer. The dielectric layer may include a recess. The capacitor may also include a second electrode having a first side and a second side. The first side of the second electrode may be included within the recess of the dielectric layer.