Philip H Li, Age 59San Jose, CA

7253455, Aug 7, 2007

Apr 5, 2005

11/100095

Bruce M. Green - Gilbert AZ, US
Olin L. Hartin - Chandler AZ, US
Ellen Y. Lan - Chandler AZ, US
Philip H. Li - Scottsdale AZ, US
Monte G. Miller - Phoenix AZ, US
Matthias Passlack - Chandler AZ, US
Marcus R. Ray - Tempe AZ, US
Charles E. Weitzel - Mesa AZ, US

Freescale Semiconductor, Inc. - Austin TX

H01L 31/0328
H01L 31/0336
H01L 31/072
H01L 29/06

257194, 257 20, 257 24, 257192

In one embodiment, a semiconductor device () includes a buffer layer () formed over a substrate (). An AlGaAs layer () is formed over the buffer layer () and has a first doped region () formed therein. An InGaAs channel layer () is formed over the AlGaAs layer (). An AlGaAs layer () is formed over the InGaAs channel layer (), and the AlGaAs layer () has a second doped region formed therein. A GaAs layer () having a first recess is formed over the AlGaAs layer (). A control electrode () is formed over the AlGaAs layer (). A doped GaAs layer () is formed over the undoped GaAs layer () and on opposite sides of the control electrode () and provides first and second current electrodes. When used to amplify a digital modulation signal, the semiconductor device () maintains linear operation over a wide temperature range.

7341915, Mar 11, 2008

May 31, 2005

11/142057

Philip Li - Scottsdale AZ, US
Suman K. Banerjee - Chandler AZ, US
Thuy B. Dao - Austin TX, US
Olin L. Hartin - Chandler AZ, US
Jay P. John - Chandler AZ, US

Freescale Semiconductor, Inc. - Austin TX

H01L 21/336
H01L 21/84

438283, 438151, 438157, 438284, 257E21421

Methods are provided for forming a semiconductor device from a substrate comprising a bottom gate layer, a channel layer overlying the bottom gate layer, and a top gate structure formed over the channel layer. First, a hardmask comprising a first material interposed between a second material and a third material is deposited over a portion of the top gate structure. Then, the hardmask and top gate structure are encapsulated with an insulating material to form a spacer. A channel structure is formed from the channel layer, and the channel structure is disposed under the spacer. A bottom gate structure is formed from the bottom gate layer, and the bottom gate structure is disposed under the channel structure. Then, a source/drain contact is formed around the bottom gate structure.

2018036, Dec 20, 2018

Jun 15, 2017

15/624452

- Menlo Park CA, US
Yaron Fidler - San Jose CA, US
Ching-Chih Weng - Union City CA, US
Emily Klebanoff - San Francisco CA, US
Philip Hui Li - San Jose CA, US
Aniruddha Ramakant Kortikar - Sunnyvale CA, US

G06F 17/30

The present disclosure relates generally to taxonomies. More particularly, techniques are described for receiving a taxonomy as input, automatically generating data structures representing the taxonomy, determining content that is relevant to different concepts of the taxonomy, and generating an interface that enables users to access and navigate through the taxonomy-related content. The taxonomy specification may specify a taxonomy for a domain including various concepts related to the domain and hierarchical relationships between the concepts. Based on the taxonomy specification, a taxonomy structure may be generated for the taxonomy, the taxonomy structure including multiple taxonomy nodes corresponding to the multiple concepts. Content stored by a social networking system (SNS) may be searched to identify content relevant to each taxonomy node. Using relevant content identified, multiple web pages may be built with for the multiple taxonomy nodes in the taxonomy structure.

2016034, Nov 24, 2016

May 20, 2016

15/161179

- Cupertino CA, US
Philip H. Li - Cupertino CA, US
Chung Chun Wan - Fremont CA, US
Anup K. Sharma - Cupertino CA, US
Xiangli Li - Cupertino CA, US

H01L 27/146

A pixel in an image sensor can include a photodetector and a storage region disposed in one substrate, or a photodetector disposed in one substrate and a storage region in another substrate. A buried light shield is disposed between the photodetector and the storage region. A sense region, such as a floating diffusion, can be adjacent to the storage region, with the buried light shield disposed between the photodetector and the storage and sense regions. When the photodetector and the storage region are disposed in separate substrates, a vertical gate can be formed through the buried light shield and used to initiate the transfer of charge from the photodetector and the storage region. A transfer channel formed adjacent to, or around the vertical gate provides a channel for the charge to transfer from the photodetector to the storage region.

2015003, Feb 5, 2015

Aug 5, 2013

13/959362

- Cupertino CA, US
Philip H. Li - Pleasanton CA, US
Chung Chun Wan - Fremont CA, US
Anup K. Sharma - Sunnyvale CA, US
Xiangli Li - San Jose CA, US

Apple Inc. - Cupertino CA

H01L 27/146

257292, 257435, 438 69, 438 72, 257432

A pixel in an image sensor can include a photodetector and a storage region disposed in one substrate, or a photodetector disposed in one substrate and a storage region in another substrate. A buried light shield is disposed between the photodetector and the storage region. A sense region, such as a floating diffusion, can be adjacent to the storage region, with the buried light shield disposed between the photodetector and the storage and sense regions. When the photodetector and the storage region are disposed in separate substrates, a vertical gate can be formed through the buried light shield and used to initiate the transfer of charge from the photodetector and the storage region. A transfer channel formed adjacent to, or around the vertical gate provides a channel for the charge to transfer from the photodetector to the storage region.