James M Dilorenzo, Age 5927 Northview Hills Ct, Pine Neck, NY 11963

2011029, Dec 1, 2011

Apr 28, 2011

13/096569

John COGGESHALL - Pontiac MI, US
James Dilorenzo - Sag Harbor NY, US
Kevin Dorry - Sparta NJ, US
John Houston - New York NY, US
Gordon Trotter - Sagaponack NY, US
David Andrew Stackpole - Greenwich CT, US
Yen Tse Yap - Kuala Lumpur, MY

G06Q 30/00

705 1466, 705 1471, 705 1469

A platform or marketplace for individual users to store, control, maintain ownership over, and monetize data related to themselves and their activities. The platform or marketplace facilitates company offers, such as product offers from producers, to members on mutually agreeable contract terms, facilitating mass connection of individual users. The platform or marketplace facilitates protected communication, third part advertising, member payment, and various other functions related to user data ownership and individual monetization.

4111725, Sep 5, 1978

May 6, 1977

5/794336

Alfred Yi Cho - Summit NJ
James Vincent DiLorenzo - Piscataway NJ
Gerard Edward Mahoney - Branchburg NJ

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

H01L 2120
H01L 21306

148175

MBE growth of epitaxial layers on selected areas of a growth surface (e. g. , wafer or epi-layer grown thereon) is achieved by masking portions of the surface with an amorphous material and directing molecular beams at the masked surface so that a polycrystalline layer deposits on the mask and an epi-layer grows in the unmasked zones. The mask material is then exposed to a suitable etchant effective to dissolve that material, lift-off the polycrystalline layer and expose the underlying surface. Self-aligned contacts can be fabricated by depositing a metal layer prior to etching. Subsequent lift-off removes both the polycrystalline layer and the overlying metal. This process can be utilized in the fabrication of FETs and opto-electronic devices such as double heterostructure junction lasers.

4236166, Nov 25, 1980

Jul 5, 1979

6/054821

Alfred Y. Cho - Summit NJ
James V. DiLorenzo - Millington NJ

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

H01L 2980

357 22

A vertical field effect transistor (10) includes a relatively wide bandgap, lowly doped active layer (18) epitaxially grown on, and substantially lattice matched to, an underlying semiconductor body portion (13). A mesa (20) of lower bandgap material is epitaxially grown on and substantially lattice matched to the active layer. A source electrode (22) is formed on a bottom major surface (34) of the semiconductor body portion, a drain electrode (24) is formed on the top of the mesa, and a pair of gate electrode stripes (26) are formed on the active layer adjacent both sides of the mesa. When voltage (V. sub. G), negative with respect to the drain, is applied to the gate electrodes, the depletion regions (28) thereunder extend laterally in the active layer until they intersect, thereby pinching off the flow of current in the channel extending from the drain and source electrodes. Also described is an embodiment in which spaced-apart, high impedance zones (30) underlie the active layer and the mesas, and the spaces between zones underlie the gate stripes.