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James D Hann, Age 7146 Beechcroft Rd, Greenwich, CT 06830

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Known as:
James B Hann James J Hoan Bonnie Hann
Related to:
Christopher J Hann 27

James Hann Phones & Addresses

46 Beechcroft Rd, Greenwich, CT 06830 (203) 861-6924

New York, NY

Manchester, CT

Stanford, CA

Venice, CA

Mentions for James D Hann

Career records & work history

Lawyers & Attorneys

James Hann Photo 1

James F. Hann, Half Moon Bay CA - Lawyer

Office:
Haynes Beffel & Wolfeld LLP
637 Main Street, Half Moon Bay, CA 94019
Mailing Address:
637 Main Street, P.O. Box 366, Half Moon Bay, California, 94019-1923
Phone:
(650) 712-0340 (Phone), (650) 712-0340 (Phone), (650) 712-0263 (Fax)
Specialties:
Patents, Copyrights, Trademarks
Memberships:
The State Bar of California, American Bar Association, American Intellectual Property Law Association.
ISLN:
906721726
Admitted:
1977, California, registered to practice before U.S. Patent and Trademark Office
University:
Virginia Polytechnic Institute and State University (B.S.M.E., with distinction, 1971, M.S., 1973)
Law School:
Hastings College of Law, University of California, J.D., 1977
Military:
Capt., JAGC, U.S. Army, 1977-1979.
Links:
Site
Biography:
Tau Beta Pi; Pi Tau Sigma. Vice President, Inventors of California, 1986-1991. Former Arbitrator, Bar Association of San Francisco, Attorney-Client Free Dispute Committee.
James Hann Photo 2

James F Hann, Half Moon Bay CA - Lawyer

Address:
Haynes Beffel & Wolfeld LLP
751 Kelly Street, Half Moon Bay, CA 94019
(650) 712-0340 (Office), (650) 712-0263 (Fax)
Licenses:
California - Active 1977
Education:
Virginia Polytechnic Institute and State UniversityDegree MS - Master of Science - Mechanical EngineeringGraduated 1973
University of California, Hastings College of the LawDegree JD - Juris Doctor - Law
Specialties:
Patent Application - 25%
Licensing - 25%
Litigation - 25%
Intellectual Property - 25%
Associations:
American Bar Association - Member
American Intellectual Property Law Association - Member
James Hann Photo 3

James Chungmin Hann, San Jose CA - Lawyer

Address:
Hann Law Firm
560 S Winchester Blvd Ste 500, San Jose, CA 95128
(408) 755-9793 (Office)
Licenses:
California - Active 2001
Education:
University of San Francisco School of Law
University of California - San Diego
James Hann Photo 4

James Hann - Lawyer

Specialties:
Personal Injury, Family, Litigation
ISLN:
916490612
Admitted:
2001
University:
University of California San Diego, La Jolla CA; University of San Francisco School of law, San Francisco CA
Law School:
San Francisco Law School, J.D.

License Records

James Dwight Hann

Address:
46 Beechcroft Rd, Greenwich, CT 06830
Licenses:
License #: A3156628
Category: Airmen

James Hann resumes & CV records

Resumes

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James Hann

James Hann Photo 50

James Hann

James Hann Photo 51

James Hann

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James Hann

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James Hann

Location:
United States

Publications & IP owners

Us Patents

Semiconductor Process Chamber Exhaust Port Quartz Removal Tool

US Patent:
5833290, Nov 10, 1998
Filed:
Jan 13, 1998
Appl. No.:
/006278
Inventors:
Bradley Mitchell Curelop - Sunnyvale CA
James Hann - Santa Clara CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B25B 2706
US Classification:
294 97
Abstract:
A tool for removing a quartz insert from an exhaust port of a semiconductor process chamber. In one embodiment, the tool of the present invention comprises a pair of generally elongated members (a first elongated member and a second elongated member) that are hingedly attached at a middle portion of each member. The first elongated member includes a first handle portion and a first end portion that are located on opposite ends of the middle portion of the elongated member. The second elongated member includes a second handle portion and a second end portion. The first and second handle portions are of sufficient length so as to be gripped by a user. A first head and a second head are pivotally attached to the first and second end portion of the first and second elongated members, respectively. Each head includes a face made of a pliable, gripping material, such as silicon rubber, for engaging the inner side wall surfaces of a quartz insert that is located within the exhaust port of a semiconductor processing chamber. The quartz insert is removed by inserting the first and second heads into the through bore opening of the quartz insert and moving the first and second handle portions outward away from one another such that the face of each head is in abutting engagement with the inner side wall surfaces of the quartz insert.

Low Temperature Etching In Cold-Wall Cvd Systems

US Patent:
5421957, Jun 6, 1995
Filed:
Jul 30, 1993
Appl. No.:
8/100582
Inventors:
David K. Carlson - Santa Clara CA
H. Peter W. Hey - San Jose CA
James C. Hann - Santa Clara CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B44C 122
US Classification:
216 58
Abstract:
An improved method of etching or cleaning a cold-wall chemical vapor deposition chamber that is substantially moisture-free at a low chamber temperature and a low chamber pressure while maintaining a satisfactory etch rate by using at least one etchant gas selected from the group consisting of nitrogen trifluoride, chlorine trifluoride, sulfur hexafluoride, carbon tetrafluoride or the like and mixtures thereof.

Semiconductor Process Chamber Exhaust Port Quartz Removal Tool

US Patent:
5743581, Apr 28, 1998
Filed:
Mar 18, 1997
Appl. No.:
8/819962
Inventors:
Bradley Mitchell Curelop - Sunnyvale CA
James Hann - Santa Clara CA
Assignee:
Applied Materials Incorporated - Santa Clara CA
International Classification:
B25B 2706
US Classification:
294 97
Abstract:
A tool for removing a quartz insert from an exhaust port of a semiconductor process chamber. In one embodiment, the tool of the present invention comprises a pair of generally elongated members (a first elongated member and a second elongated member) that are hingedly attached at a middle portion of each member. The first elongated member includes a first handle portion and a first end portion that are located on opposite ends of the middle portion of the elongated member. The second elongated member includes a second handle portion and a second end portion. The first and second handle portions are of sufficient length so as to be gripped by a user. A first head and a second head are pivotally attached to the first and second end portion of the first and second elongated members, respectively. Each head includes a face made of a pliable, gripping material, such as silicon rubber, for engaging the inner side wall surfaces of a quartz insert that is located within the exhaust port of a semiconductor processing chamber. The quartz insert is removed by inserting the first and second heads into the through bore opening of the quartz insert and moving the first and second handle portions outward away from one another such that the face of each head is in abutting engagement with the inner side wall surfaces of the quartz insert.

Possible Relatives

Cynthia S Hann  Dan B Hann  Danielle E Hann  Dennis M Hann  Dorothy L Hann  Edward J Hann  Eleanor E Hann  James M Last  James G Stanco  James A Stanczak 

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