Jason Andrew Tolentino, Age 4312913 NE 201St St, Woodinville, WA 98072

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12913 NE 201St St, Woodinville, WA 98072

Kirkland, WA

2330 Vanguard Way, Costa Mesa, CA 92626 (714) 850-9750

2330 Vanguard Way #A102, Costa Mesa, CA 92626 (714) 850-9750

438 Enclave Cir, Costa Mesa, CA 92626 (714) 850-9750

4165 Executive Dr UNIT 304, La Jolla, CA 92037

Walnut, CA

Chino Hills, CA

Orange, CA

San Diego, CA

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Us Patents

Method To Fabricate Quantum Dot Field-Effect Transistors Without Bias-Stress Effect

US Patent:
2016018, Jun 23, 2016
Filed:
Dec 17, 2015
Appl. No.:
14/973522
Inventors:
- Oakland CA, US
Jason Tolentino - Irvine CA, US
International Classification:
H01L 29/66
H01L 29/778
H01L 29/15
Abstract:
Disclosed herein are embodiments of a method to form quantum dot field-effect transistors (QD FETs) having little to no bias-stress effect. Bias-stress effect can be reduced or eliminated through, as an example, the use of a gas or liquid to remove ligands and/or reduce charge trapping on the QD FETs, followed by deposition of an inorganic or organic matrix around the QDs in the FET.

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