Jeffrey Alexander Chard, Age 51404 Sylvan Ave, San Mateo, CA 94403

Jeffrey Chard Phones & Addresses

404 Sylvan Ave, San Mateo, CA 94403 (408) 483-7329

615 Arcadia Ter, Sunnyvale, CA 94085 (408) 737-7992

Stockton, CA

Madison, WI

Santa Clara, CA

Durham, NC

Waller, TX

Show more

Mentions for Jeffrey Alexander Chard

Jeffrey Chard resumes & CV records

Resumes

Jeffrey Chard Photo 17

Jeffrey Chard

Location:
404 Sylvan Ave, San Mateo, CA 94403
Industry:
Military
Work:
Logan Industries Mar 2013 - Feb 2016
Assembly Technician
Napa Auto Parts Sep 2012 - Mar 2013
Napa Parts Sales Person
Us Army Feb 2000 - Aug 2012
Maintenance Supervisor
Us Army Jan 1985 - Aug 2012
Senior Maintenance Supervisor
Education:
Conroe High School 1976 - 1980
Skills:
Leadership, Team Building, Fluid Mechanics, Operational Planning, Army, Troubleshooting, Electronics, Business Development, Oil and Gas Industry, Records Management, Team Leadership, Engineering, Hazardous Materials Management, Hydraulics, Mechanical Engineering, Preventive Maintenance, Operations Management, Maintenance, Electricians, Supervisory Skills, Mechanical Testing, Transportation Management, Manufacturing, Time Management, Employee Training, Corrective Maintenance, Customer Service, Maintenance Management, Military, Project Planning, Security Clearance, Technical Support, Operational Risk Management, Operational Excellence, Business Strategy, Project Management, Coaching and Mentoring, Problem Solving, Fault Finding, Maintenance and Repair, Inspection, Logistics Management
Interests:
Civil Rights and Social Action
Politics
Environment
Science and Technology
Human Rights
Fishing
Health
Languages:
English
Spanish
Jeffrey Chard Photo 18

Jeffrey Chard

Jeffrey Chard Photo 19

Jeffrey Chard

Jeffrey Chard Photo 20

Jeffrey Chard

Publications & IP owners

Us Patents

Parallel Profile Determination For An Optical Metrology System

US Patent:
7469192, Dec 23, 2008
Filed:
Jul 11, 2006
Appl. No.:
11/485046
Inventors:
Tri Thanh Khuong - San Jose CA, US
Junwei Bao - Palo Alto CA, US
Jeffrey A. Chard - Sunnyvale CA, US
Wei Liu - Santa Clara CA, US
Ying Zhu - Cupertino CA, US
Sachin Deshpande - San Jose CA, US
Pranav Sheth - San Jose CA, US
Hong Qiu - Union City CA, US
Assignee:
Tokyo Electron Ltd. - Tokyo
International Classification:
G06F 19/00
G01B 11/00
US Classification:
702 84, 702189, 356600
Abstract:
A system to process requests for wafer structure profile determination from optical metrology measurements off a plurality of structures formed on one or more wafer includes a diffraction signal processor, a diffraction signal distributor, and a plurality of profile search servers. The diffraction signal processor is configured to obtain a plurality of measured diffraction signals of the plurality of structures. The diffraction signal distributor is coupled to the diffraction signal processor. The diffraction signal processor is configured to transmit the plurality of measured diffraction signals to the diffraction signal distributor. The plurality of profile search servers is coupled to the diffraction signal distributor. The diffraction signal distributor is configured to distribute the plurality of measured diffraction signals to the plurality of profile search servers. The profile search servers are configured to process in parallel the plurality of measured diffraction signals to determine profiles of the plurality of structures corresponding to the plurality of measured diffraction signals.

Parallel Profile Determination In Optical Metrology

US Patent:
7515283, Apr 7, 2009
Filed:
Jul 11, 2006
Appl. No.:
11/485048
Inventors:
Tri Thanh Khuong - San Jose CA, US
Junwei Bao - Palo Alto CA, US
Jeffrey Alexander Chard - Sunnyvale CA, US
Wei Liu - Santa Clara CA, US
Ying Zhu - Cupertino CA, US
Sachin Deshpande - San Jose CA, US
Pranav Sheth - San Jose CA, US
Hong Qiu - Union City CA, US
Assignee:
Tokyo Electron, Ltd. - Tokyo
International Classification:
G01B 11/14
G06F 15/00
US Classification:
356625, 356601, 356636, 438 14, 702127
Abstract:
In processing requests for wafer structure profile determination from optical metrology measurements, a plurality of measured diffraction signal of a plurality of structures formed on one or more wafers is obtained. The plurality of measured diffraction signals is distributed to a plurality of instances of a profile search module. The plurality of instances of the profile search model is activated in one or more processing threads of one or more computer systems. The plurality of measured diffraction signals is processed in parallel using the plurality of instances of the profile search module to determine profiles of the plurality of structures corresponding to the plurality of measured diffraction signals.

Evaluating A Profile Model To Characterize A Structure To Be Examined Using Optical Metrology

US Patent:
7518740, Apr 14, 2009
Filed:
Jul 10, 2006
Appl. No.:
11/484459
Inventors:
Jeffrey A. Chard - Sunnyvale CA, US
Junwei Bao - Palo Alto CA, US
Youxian Wen - Fremont CA, US
Sanjay Yedur - Fremont CA, US
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
G01B 11/14
G01B 11/24
G06F 19/00
US Classification:
356625, 356601, 356636, 702189, 700121
Abstract:
A profile model to characterize a structure to be examined using optical metrology is evaluated by displaying a set of profile parameters that characterizes the profile model. Each profile parameter has a range of values for the profile parameter. For each profile parameter having a range of values, an adjustment tool is displayed for selecting a value for the profile parameter within the range of values. A measured diffraction signal, which was measured using an optical metrology tool, is displayed. A simulated diffraction signal, which was generated based on the values of the profile parameters selected using the adjustment tools for the profile parameters, is displayed. The simulated diffraction signal is overlaid with the measured diffraction signal.

Determining One Or More Profile Parameters Of A Structure Using Optical Metrology And A Correlation Between Profile Models And Key Profile Shape Variables

US Patent:
7596422, Sep 29, 2009
Filed:
Jan 12, 2007
Appl. No.:
11/653062
Inventors:
Jeffrey Alexander Chard - Sunnyvale CA, US
Junwei Bao - Palo Alto CA, US
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
G06F 19/00
G01B 9/00
G01J 4/00
G01N 21/55
G01J 3/00
US Classification:
700121, 700108, 700 98, 356369, 356300, 356124, 356445
Abstract:
One or more profile parameters of a structure fabricated on a wafer in a wafer application are determined by developing a correlation between a set of profile models and one or more key profile shape variables. The wafer application has one or more process steps and one or more process parameters. Each profile model is defined using a set of profile parameters to characterize the shape of the structure. Different sets of profile parameters define the profile models in the set. The one or more key profile shape variables include one or more profile parameters or one or more process parameters. A value of at least one key profile shape variable of the process step of the wafer application to be used in fabricating the structure is determined. One profile model is selected from the set of profile models based on the determined correlation and the value of the at least one determined key profile shape variable. The structure is fabricated using the process step and the value of the at least one determined key profile shape variable determined.

Automated Process Control Using Optical Metrology And A Correlation Between Profile Models And Key Profile Shape Variables

US Patent:
7667858, Feb 23, 2010
Filed:
Jan 12, 2007
Appl. No.:
11/653061
Inventors:
Jeffrey Alexander Chard - Sunnyvale CA, US
Junwei Bao - Palo Alto CA, US
Manuel Madriaga - San Jose CA, US
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
G01B 11/14
US Classification:
356625, 700121, 700108, 356369, 356124
Abstract:
A process step in fabricating a structure on a wafer in a wafer application having one or more process steps and one or more process parameters is controlled by determining a correlation between a set of profile models and one or more key profile shape variables. Each profile model is defined using a set of profile parameters to characterize the shape of the structure. Different sets of profile parameters define the profile models in the set. The one or more key profile shape variables include one or more profile parameters or one or more process parameters. One profile model is selected from the set of profile models based on the correlation and a value of at least one key profile shape variable of the process of the wafer application to be used in fabricating the structure. The structure is fabricated in a first fabrication process cluster using the process step and the value of the at least one key profile shape variable. A measured diffraction signal is obtained off the structure.

Data Flow Management In Generating Different Signal Formats Used In Optical Metrology

US Patent:
7765234, Jul 27, 2010
Filed:
Oct 12, 2006
Appl. No.:
11/580716
Inventors:
Hong Qiu - Union City CA, US
Junwei Bao - Palo Alto CA, US
Wei Liu - Santa Clara CA, US
Jeffrey Alexander Chard - Sunnyvale CA, US
Miao Liu - Mountain View CA, US
Gang He - Sunnyvale CA, US
Hemalatha Erva - Fremont CA, US
Vi Vuong - Fremont CA, US
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
G06Q 50/00
US Classification:
707793, 702189, 356399, 703 6, 382141, 707953
Abstract:
To manage data flow in generating different signal formats for use in optical metrology, a project data object is created. A first option data object is created. The first option data object has a set of signal parameters. Different settings of the set of signal parameters correspond to different signal formats for diffraction signals. A version number is associated with the first option data object. The first option data object is linked with the project data object. At least a second option data object is created. The second option data object has a set of signal parameters. Different settings of the set of signal parameters correspond to different signal formats for diffraction signals. The set of signal parameters of the first option data object and the set of signal parameters of the second option data object are set differently. Another version number is associated with the second option data object. The second option data object is linked with the project data object.

Data Flow Management In Generating Profile Models Used In Optical Metrology

US Patent:
7783669, Aug 24, 2010
Filed:
Oct 12, 2006
Appl. No.:
11/580570
Inventors:
Hong Qiu - Union City CA, US
Junwei Bao - Palo Alto CA, US
Wei Liu - Santa Clara CA, US
Jeffrey Alexander Chard - Sunnyvale CA, US
Miao Liu - Mountain View CA, US
Gang He - Sunnyvale CA, US
Hemalatha Erva - Fremont CA, US
Vi Vuong - Fremont CA, US
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
G06Q 50/00
US Classification:
707793, 702189, 356399, 703 6, 382141, 707953
Abstract:
To manage data flow in generating profile models for use in optical metrology, a project data object is created. A first profile model data object is created. The first profile model data object corresponds to a first profile model defined using profile parameters. A version number is associated with the first profile model data object. The first profile model data object is linked with the project data object. At least a second profile model data object is created. The second profile model data object corresponds to a second profile model defined using profile parameters. The first and second profile models are different. Another version number is associated with the second profile model data object. The second profile model data object is linked with the project data object. The project data object, the first profile model data object, and the second profile model data object are stored.

Generating A Profile Model To Characterize A Structure To Be Examined Using Optical Metrology

US Patent:
2008001, Jan 17, 2008
Filed:
Jul 11, 2006
Appl. No.:
11/484974
Inventors:
Jeffrey A. Chard - Sunnyvale CA, US
Junwei Bao - Palo Alto CA, US
Joerg Bischoff - Illmenau, DE
Shifang Li - Pleasanton CA, US
Wei Liu - Santa Clara CA, US
Hong Qiu - Union City CA, US
Sylvio Rabello - Palo Alto CA, US
Vi Vuong - Fremont CA, US
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
G01B 11/14
US Classification:
356625
Abstract:
In generating a profile model to characterize a structure to be examined using optical metrology, a view canvas is displayed, with the profile model being generated displayed in the view canvas. A profile shape palette is displayed adjacent to the view canvas. A plurality of different profile shape primitives is displayed in the profile shape palette. Each profile shape primitive in the profile shape palette is defined by a set of profile parameters. When a user selects a profile shape primitive from the profile shape palette, drags the selected profile shape primitive from the profile shape palette, and drops the selected profile shape primitive into the view canvas, the selected profile shape primitive is incorporated into the profile model being generated and displayed in the view canvas.

NOTICE: You may not use PeopleBackgroundCheck or the information it provides to make decisions about employment, credit, housing or any other purpose that would require Fair Credit Reporting Act (FCRA) compliance. PeopleBackgroundCheck is not a Consumer Reporting Agency (CRA) as defined by the FCRA and does not provide consumer reports.