Jenn Luen Yeh, Age 76Saratoga, CA

5410185, Apr 25, 1995

Dec 20, 1993

8/170659

Jenn L. Yeh - Saratoga CA

H01L 2348

257776

A bridging contact between internal contacts in a semiconductor integrated circuit is formed which is insulated from any connection to an intervening feature. A first dielectric layer is deposited over the contacts and the intervening feature, followed by an etch stop layer. The etch stop layer is patterned to form an etch stop mask and a second dielectric layer is deposited over the first dielectric layer and the patterned etch stop. The first and second dielectric layers are etched to form a trench opening and a pair of communicating passageways in the dielectric layers which expose the internal contacts. The etch stop mask protects and controls the vertical and horizontal dimensions of the resultant dielectric insulator that protects the intervening feature. Metal is deposited in the opening and passageways to form a bridging contact between the contacts. The bridging contact is electrically isolated from the intervening feature by the dielectric insulator remaining over and around the intervening feature.

4832789, May 23, 1989

Apr 8, 1988

7/179176

William T. Cochran - New Tripoli PA
Agustin M. Garcia - Allentown PA
Graham W. Hills - Allentown PA
Jenn L. Yeh - Macungie PA

American Telephone and Telegrph Company, AT&T Bell Laboratories - Murray Hill NJ

B44C 122
C23F 102
C03C 1500
C03C 2506

156644

A self-assigned, self-planarized metallization scheme for multilevel interconnections using self-aligned windows in integrated circuits is described. Trenches are etched into a dielectric and then, using an etch stop layer on top of the dielectric to prevent unwanted etching of the dielectric, self-aligned windows which expose portions of the substrate are etched in the dielectric. Self-aligned windows can also be formed without a mask.

5169802, Dec 8, 1992

Jun 17, 1991

7/716050

Jenn L. Yeh - Saratoga CA

Hewlett-Packard Company - Palo Alto CA

H01L 21441
H01L 21471

437195

A bridging contact between internal contacts in a semiconductor integrated circuit is formed which is insulated from any connection to an intervening feature. A first dielectric layer is deposited over the contacts and the intevening feature, followed by an etch stop layer. The etch stop layer is patterned to form an etch stop mask and a second dielectric layer is deposited over the first dielectric layer and the patterned etch stop. The first and second dielectric layers are etched to form a trench opening and a pair of communicating passageways in the dielectric layers which expose the internal contacts. The etch stop mask protects and controls the vertical and horizontal dimensions of the resultant dielectric insulator that protects the intervening feature. Metal is deposited in the opening and passageways to form a bridging contact between the contacts. The bridging contact is electrically isolated from the intervening feature by the dielectric insulator remaining over and around the intervening feature.