Joseph Gering resumes & CV records
Resumes
Joseph Gering
Location:
Greensboro/Winston-Salem, North Carolina Area
Industry:
Semiconductors
Joseph M Gering, Age 628107 Dorsett Downs Dr, Stokesdale, NC 27357
Joseph Gering Phones & Addresses
8107 Dorsett Downs Dr, Stokesdale, NC 27357 (336) 643-5729
Winston Salem, NC
West Jefferson, NC
19 Centre St, Waltham, MA 02453 (781) 891-3359
Burlington, MA
Louisville, KY
Champaign, IL
Guilford, NC
Social networks
Joseph M Gering
Linkedin
Industries
Semiconductors
Mentions for Joseph M Gering
Publications & IP owners
Us Patents
Linearity Improvements Of Semiconductor Substrate Using Passivation
US Patent:
7915706, Mar 29, 2011
Filed:
Jul 8, 2008
Appl. No.:
12/169244
Inventors:
Daniel Charles Kerr - Oak Ridge NC, US
Thomas Gregory McKay - Boulder Creek CA, US
Michael Carroll - Jamestown NC, US
Joseph M. Gering - Stokesdale NC, US
Thomas Gregory McKay - Boulder Creek CA, US
Michael Carroll - Jamestown NC, US
Joseph M. Gering - Stokesdale NC, US
Assignee:
RF Micro Devices, Inc. - Greensboro NC
International Classification:
H01L 27/06
US Classification:
257528, 257E27014
Abstract:
The present invention relates to using a potentially trap-rich layer, such as a polycrystalline Silicon layer, over a passivation region of a semiconductor substrate or a Silicon-on-insulator (SOI) device layer to substantially immobilize a surface conduction layer at the surface of the semiconductor substrate or SOI device layer at radio frequency (RF) frequencies. The potentially trap-rich layer may have a high density of traps that trap carriers from the surface conduction layer. The average release time from the traps may be longer than the period of any present RF signals, thereby effectively immobilizing the surface conduction layer, which may substantially prevent capacitance and inductance changes due to the RF signals. Therefore, harmonic distortion of the RF signals may be significantly reduced or eliminated. The semiconductor substrate may be a Silicon substrate, a Gallium Arsenide substrate, or another substrate.
Linearity Improvements Of Semiconductor Substrate Based Radio Frequency Devices
US Patent:
8076750, Dec 13, 2011
Filed:
Dec 2, 2010
Appl. No.:
12/958494
Inventors:
Daniel Charles Kerr - Oak Ridge NC, US
Thomas Gregory McKay - Boulder Creek CA, US
Michael Carroll - Jamestown NC, US
Joseph M. Gering - Stokesdale NC, US
Thomas Gregory McKay - Boulder Creek CA, US
Michael Carroll - Jamestown NC, US
Joseph M. Gering - Stokesdale NC, US
Assignee:
RF Micro Devices, Inc. - Greensboro NC
International Classification:
H01L 29/00
US Classification:
257528, 257531, 438381, 438763
Abstract:
The present invention relates to using a trap-rich layer, such as a polycrystalline Silicon layer, over a semiconductor substrate to substantially immobilize a surface conduction layer at the surface of the semiconductor substrate at radio frequency (RF) frequencies. The trap-rich layer may have a high density of traps that trap carriers from the surface conduction layer. The average release time from the traps may be longer than the period of any present RF signals, thereby effectively immobilizing the surface conduction layer, which may substantially prevent capacitance and inductance changes due to the RF signals. Therefore, harmonic distortion of the RF signals may be significantly reduced or eliminated. The semiconductor substrate may be a Silicon substrate, a Gallium Arsenide substrate, or another substrate.
Linearity Improvements Of Semiconductor Substrate Based Radio Frequency Devices
US Patent:
7868419, Jan 11, 2011
Filed:
Oct 20, 2008
Appl. No.:
12/254499
Inventors:
Daniel Charles Kerr - Oak Ridge NC, US
Thomas Gregory McKay - Boulder Creek CA, US
Michael Carroll - Jamestown NC, US
Joseph M. Gering - Stokesdale NC, US
Thomas Gregory McKay - Boulder Creek CA, US
Michael Carroll - Jamestown NC, US
Joseph M. Gering - Stokesdale NC, US
Assignee:
RF Micro Devices, Inc. - Greensboro NC
International Classification:
H01L 27/08
US Classification:
257531, 257499
Abstract:
The present invention relates to using a trap-rich layer, such as a polycrystalline Silicon layer, over a semiconductor substrate to substantially immobilize a surface conduction layer at the surface of the semiconductor substrate at radio frequency (RF) frequencies. The trap-rich layer may have a high density of traps that trap carriers from the surface conduction layer. The average release time from the traps may be longer than the period of any present RF signals, thereby effectively immobilizing the surface conduction layer, which may substantially prevent capacitance and inductance changes due to the RF signals. Therefore, harmonic distortion of the RF signals may be significantly reduced or eliminated. The semiconductor substrate may be a Silicon substrate, a Gallium Arsenide substrate, or another substrate.
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