People Background Check
Find People:

Kathy LiangSunnyvale, CA

Get Report
Known as:
Xiaochun Liang

Kathy Liang Phones & Addresses

Sunnyvale, CA

Cupertino, CA

2217 Senna Hills Ln, Plano, TX 75025

Dallas, TX

Kent, OH

Mentions for Kathy Liang

Kathy Liang resumes & CV records

Resumes

Kathy Liang Photo 28

Commercial Excellence Leader

Location:
1400 south Joyce St, Arlington, VA 22202
Industry:
Management Consulting
Work:
Borouge
Commercial Excellence Leader Accenture Dec 2012 - Oct 2015
Management Consultant Twin Creeks Technologies, Inc Oct 2009 - Aug 2012
Senior Process Integration Engineer Spansion Jul 2008 - Apr 2009
Process Development Engineer Ii Spansion Jul 2007 - Jun 2008
Process Development Engineer I Lawrence Berkeley National Laboratory Aug 2005 - May 2007
Undergraduate Researcher Spansion May 2006 - Aug 2006
Engineering Intern Honeywell Jun 2005 - Sep 2005
Engineering Intern
Education:
Insead 2016 - 2016
Master of Business Administration, Masters University of California, Berkeley 2007 - 2007
Bachelors, Bachelor of Science, Chemical Engineering, Industrial Engineering
Skills:
Design of Experiments, Data Analysis, Cross Functional Team Leadership, Process Engineering, Jmp, Semiconductors, Continuous Improvement, Six Sigma, Root Cause Analysis, Microsoft Office, Manufacturing, Failure Analysis, Project Management, Tableau, Spc, Engineering Management, Analytical Skills, Mysql, Business Analysis, Minitab
Languages:
English
Cantonese
Mandarin
Japanese
Spanish
Certifications:
Six Sigma Black Belt
Kathy Liang Photo 29

Cpsp Counselor

Work:

Cpsp Counselor
Kathy Liang Photo 30

Kathy Liang

Publications & IP owners

Us Patents

Semiconductor Assembly With A Metal Oxide Layer Having Intermediate Refractive Index

US Patent:
2012008, Apr 5, 2012
Filed:
Sep 30, 2010
Appl. No.:
12/894254
Inventors:
Kathy J. Liang - Sunnyvale CA, US
Gopalakrishna Prabhu - San Jose CA, US
HienMinh Huu Le - San Jose CA, US
Assignee:
TWIN CREEKS TECHNOLOGIES, INC. - San Jose CA
International Classification:
H01L 31/0224
H01L 31/18
US Classification:
136256, 438 69, 257E31126
Abstract:
A semiconductor assembly is described with a thin metal oxide layer interposed between a transparent conductive oxide and an amorphous silicon layer, along with methods for making this structure. The metal oxide layer has a refractive index or range of refractive indices intermediate between that of the transparent conductive oxide and the amorphous silicon layer, and thus tends to reduce reflection at the interface. Such a layer can be used at the light-facing surface of a light-sensitive device such as a photovoltaic cell to maximize the amount of incident light entering the cell. Titanium oxide is a suitable metal oxide, and has a refractive index between those of silicon and of both indium tin oxide and aluminum-doped zinc oxide, two common transparent conductive oxides.

Possible Relatives

David H Liang  Dan C Liang  Diana Liang  Eric C Liang  Frances Liang  Gang Liang  Grace L Liang  Kathy K Stamps  Kathy S Stancil  Kathy A Johnston 

NOTICE: You may not use PeopleBackgroundCheck or the information it provides to make decisions about employment, credit, housing or any other purpose that would require Fair Credit Reporting Act (FCRA) compliance. PeopleBackgroundCheck is not a Consumer Reporting Agency (CRA) as defined by the FCRA and does not provide consumer reports.