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Kaveh F Niazi, Age 602506 Leimert Blvd, Oakland, CA 94602

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Known as:
Kaveh Farzad Niazi Kaveh S Niazi Yaveh S Niazi
Related to:
Ameri Eshghabady

Kaveh Niazi Phones & Addresses

2506 Leimert Blvd, Oakland, CA 94602

Marina, CA

925 Hilldale Ave, Berkeley, CA 94708 (510) 527-1108

New York, NY

Duluth, MN

Santa Clara, CA

Alameda, CA

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Social networks

Kaveh F Niazi

Linkedin

Skills

Semiconductors • Thin Films • Research • Project Management • Program Management • Analysis • Strategy • Qualitative Research • Microsoft Office • Teaching • Microsoft Excel • Business Strategy • English • Statistics • Jmp • Product Development • Cvd • Photography • Arabic • Applied Physics • Physics • Higher Education • Computer Science • Editing • Historian • Management • Science • Strategic Planning

Languages

Arabic • Persian

Interests

Christianity • Kids • Exercise • Investing • Gardening • Electronics • Home Improvement • Reading • Music • Automobiles • Family Values • Movies • Collecting • Home Decoration

Industries

Research

Mentions for Kaveh F Niazi

Kaveh Niazi resumes & CV records

Resumes

Kaveh Niazi Photo 9

Kaveh F Niazi

Location:
925 Hilldale Ave, Berkeley, CA 94708
Industry:
Research
Skills:
Semiconductors, Thin Films, Research, Project Management, Program Management, Analysis, Strategy, Qualitative Research, Microsoft Office, Teaching, Microsoft Excel, Business Strategy, English, Statistics, Jmp, Product Development, Cvd, Photography, Arabic, Applied Physics, Physics, Higher Education, Computer Science, Editing, Historian, Management, Science, Strategic Planning
Interests:
Christianity
Kids
Exercise
Investing
Gardening
Electronics
Home Improvement
Reading
Music
Automobiles
Family Values
Movies
Collecting
Home Decoration
Languages:
Arabic
Persian

Publications & IP owners

Us Patents

Multi-Zone Rf Inductively Coupled Source Configuration

US Patent:
6083344, Jul 4, 2000
Filed:
May 29, 1997
Appl. No.:
8/865432
Inventors:
Hiroji Hanawa - Sunnyvale CA
Tetsuya Ishikawa - Santa Clara CA
Manus Wong - San Jose CA
Shijian Li - San Jose CA
Kaveh Niazi - Santa Clara CA
Kenneth Smyth - Sunnyvale CA
Fred C. Redeker - Fremont CA
Troy Detrick - Los Altos CA
Jay Dee Pinson - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H05H 100
US Classification:
156345
Abstract:
The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

Rf Plasma Source For Material Processing

US Patent:
6239553, May 29, 2001
Filed:
Apr 22, 1999
Appl. No.:
9/296934
Inventors:
Mike Barnes - San Ramon CA
Tetsuya Ishikawa - Santa Clara CA
Kaveh Niazi - Santa Clara CA
Tsutomu Tanaka - Santa Clara CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01J 724
H05B 3126
US Classification:
31511151
Abstract:
The present invention provides a plasma source that maintains a low coil voltage in the vicinity of the plasma tube, thereby reducing the capacitive coupling between the coil and the plasma and significantly reducing the erosion from the internal surfaces of the plasma tube. The plasma source generally comprises a coil having a first coil segment and a second coil segment, an RF power source connected to the coil and an enclosure disposed between the first coil segment and the second coil segment. The invention also provides a method for generating a plasma, comprising: disposing an enclosure between a first coil segment and a second coil segment; introducing a gas into the enclosure; and supplying an RF power to the coil segments to excite the gas into a plasma state. The invention provides a variety of coil operations, including symmetrical coil configuration, asymmetrical coil configuration with the matching networks adjusted to provide a low voltage near the plasma chamber, self-resonant configuration, grounded coil center configuration having coil segments driven in parallel and physically grounded near the plasma chamber, and pairs configurations having a plurality of coil segment pairs driven in series or parallel.

Possible Relatives

Abdul H Niazi  Ghazala I Niazi  Hamid R Niazi 

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