Kurt Andrew Carlsen, Age 63Uwharie, NC

6821489, Nov 23, 2004

Oct 10, 2000

09/685382

Kurt A. Carlsen - Burlington VT

International Business Machines Corporation - Armonk NY

B01D 5334

422171, 422169, 422173

A system and method for abating a simultaneous flow of silane and arsine contained in an exhaust gas of DRAM processing chamber ( ). The system includes a CVD abatement apparatus ( ) and a resin-type adsorber ( ). The CVD abatement apparatus comprises an enclosure ( ) that defines a chamber ( ) for receiving the exhaust gas. The enclosure contains a plurality of removable substrates ( ) arranged as a series of baffles inside the enclosure. As the exhaust gas flows through the CVD abatement apparatus, the silicon within the silane is deposited as a film upon the substrates by chemical vapor deposition. The arsine continues to flow through the CVD apparatus to the adsorber where it is adsorbed by the resin contained therein. After the film has reached a particular thickness, the substrates can be removed from the enclosure, cleaned of the film and returned to the enclosure for further use.

7252858, Aug 7, 2007

Feb 17, 2004

10/780341

Kurt A. Carlsen - Burlington VT, US

International Business Machines Corporation - Armonk NY

C23C 16/00

4272481, 422168, 422169, 422170, 422171, 422172, 422205, 422228, 118715, 423210, 423223

A system and method for abating a simultaneous flow of silane and arsine contained in an exhaust gas of DRAM processing chamber (). The system includes a CVD abatement apparatus () and a resin-type absorber (). The CVD abatement apparatus comprises an enclosure () that defines a chamber () for receiving the exhaust gas. The enclosure contains a plurality of removable substrates () arranged as a series of baffles inside the enclosure. As the exhaust gas flows through the CVD abatement apparatus, the silicon within the silane is deposited as a film upon the substrates by chemical vapor deposition. The arsine continues to flow through the CVD apparatus to the absorber where it is adsorbed by the resin contained therein. After the film has reached a particular thickness, the substrates can be removed from the enclosure, cleaned of the film and returned to the enclosure for further use.

7533357, May 12, 2009

Jun 2, 2006

11/421863

Kurt A. Carlsen - Burlington VT, US
Amol A. Joshi - Essex Junction VT, US
Faraydon Pakbaz - Milton VT, US
Sanjay Upreti - Lexington KY, US

International Business Machines Corporation - Armonk NY

G06F 17/50

716 4, 716 5, 716 8

A method of estimating decaps required for an IC during an initial floorplanning design phase begins by obtaining voltage variation waveforms for a plurality of nodes in a power distribution network of the IC. Next, the method computes a minimum value for each of the voltage variation waveforms and selects voltage variation waveforms below a minimum threshold value. Following this, an FDA is performed on the voltage variation waveforms below the minimum threshold value to create a set of frequency values. This involves performing an FFT on each of the voltage variation waveforms to obtain frequency domain data, wherein frequencies that cause a drop in voltage in the plurality of nodes are filtered. The method then sorts the frequency domain data, wherein the frequency domain data is arranged in order based on amplitude value, total power, frequency components, and/or amplitude of imaginary components.

8438520, May 7, 2013

Aug 29, 2011

13/219813

Kurt A. Carlsen - Burlington VT, US
Charles S. Chiu - Essex Junction VT, US
Umberto Garofano - Essex Junction VT, US
Ze Gui Pang - Shanghai, CN
Eric W. Tremble - Jericho VT, US
David Toub - Winooski VT, US
Ivan L. Wemple - Shelburne VT, US

International Business Machines Corporation - Armonk NY

G06F 17/50

716115, 716133

Methods, systems, computer programs, etc. , determine the required number of decoupling capacitors, and approximate locations for the decoupling capacitors, for a region of an integrated circuit. Switching elements of the region are entered into a simulation program running on a computerized device. Also, a power distribution model of the region is entered into the simulation program, and a power-supply voltage compression target is entered into the simulation program. These methods, systems, etc. , generate an upper number of decoupling capacitors required to satisfy the compression target when all the switching elements concurrently switch. For each switching element, the methods, systems, etc. , generate a specific number of decoupling capacitors required to satisfy the compression when only the element switches, calculate a fraction of the specific number to the upper number, assign the fraction of the total number of decoupling capacitors to each switching circuit element, and place the fraction of the total number of decoupling capacitors in electrical proximity to the element.

2012012, May 24, 2012

Apr 19, 2007

11/737447

Kurt A. Carlsen - Burlington VT, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

C23C 16/56

118724, 118722

A system for abating a simultaneous flow of silane and arsine contained in an exhaust gas of DRAM processing chamber. The system includes a CVD abatement apparatus and a resin-type adsorber. The CVD abatement apparatus comprises an enclosure that defines a chamber for receiving the exhaust gas. The enclosure contains a plurality of removable substrates arranged as a series of baffles inside the enclosure. As the exhaust gas flows through the CVD abatement apparatus, the silicon within the silane is deposited as a film upon the substrates by chemical vapor deposition. The arsine continues to flow through the CVD apparatus to the adsorber where it is adsorbed by the resin contained therein. After the film has reached a particular thickness, the substrates can be removed from the enclosure, cleaned of the film and returned to the enclosure for further use.

6253783, Jul 3, 2001

Oct 24, 2000

9/695361

Kurt A. Carlsen - Burlington VT
James McManus - Danbury CT
James Dietz - Danbury CT

International Business Machines - Armonk NY
Advanced Technology Materials, Inc. - Danbury CT

G05D 706

137 14

A sub-atmospheric gas delivery system (100) with a backflow control apparatus (10) for preventing backflow into the sub-atmospheric gas source (14). The gas delivery system includes three fluidly coupled sticks: a purge stick (120), a process gas delivery stick (124) and an evacuation stick (130). The backflow control apparatus comprises a gas line (26) fluidly coupling the sub-atmospheric gas source to a chamber (50), a valve (20) attached to the sub-atmospheric gas source for blocking fluid communication between the gas source and the gas line upon receipt of a first signal, a flow restrictor (R) in fluid communication with the gas line and positioned between the valve and the chamber, and first and second pressure transducers (P1 and P2) in fluid communication with the gas line and positioned on either side of the flow restrictor. Each transducer is capable of generating a signal representative of pressure. The backflow control apparatus further includes a valve controller unit (40) connected to the first and second pressure transducers and the valve.

6155289, Dec 5, 2000

May 7, 1999

9/307650

Kurt A. Carlsen - Burlington VT
James McManus - Danbury CT
James Dietz - Danbury CT

International Business Machines - Armonk NY
Advanced Technology Materials, Inc. - Danbury CT

G05D 706

137457

A sub-atmospheric gas delivery system (100) with a backflow control apparatus (10) for preventing backflow into the sub-atmospheric gas source (14). The gas delivery system includes three fluidly coupled sticks: a purge stick (120), a process gas delivery stick (124) and an evacuation stick (130). The backflow control apparatus comprises a gas line (26) fluidly coupling the sub-atmospheric gas source to a chamber (50), a valve (20) attached to the sub-atmospheric gas source for blocking fluid communication between the gas source and the gas line upon receipt of a first signal, a flow restrictor (R) in fluid communication with the gas line and positioned between the valve and the chamber, and first and second pressure transducers (P1 and P2) in fluid communication with the gas line and positioned on either side of the flow restrictor. Each transducer is capable of generating a signal representative of pressure. The backflow control apparatus further includes a valve controller unit (40) connected to the first and second pressure transducers and the valve.