Lance D Barron9857 Wild Ginger Dr, Mckinney, TX 75072

8541850, Sep 24, 2013

Dec 12, 2008

12/333878

Arun K. Gupta - Dallas TX, US
Lance W. Barron - Wylie TX, US
William C. McDonald - Allen TX, US

Texas Instruments Incorporated - Dallas TX

H01L 29/84

257415, 257414, 257417, 257432, 257433, 438 46, 438 48, 438 50, 438 52

In accordance with one embodiment of the present disclosure, a semiconductor substrate includes complementary metal-oxide-semiconductor (CMOS) circuitry disposed outwardly from the semiconductor substrate. An electrode is disposed outwardly from the CMOS circuitry. The electrode is electrically coupled to the CMOS circuitry. A resonator is disposed outwardly from the electrode. The resonator is operable to oscillate at a resonance frequency in response to an electrostatic field propagated, at least in part, by the electrode.

8617960, Dec 31, 2013

Dec 16, 2010

12/969784

Marie Denison - Plano TX, US
Brian E. Goodlin - Plano TX, US
Wei-Yan Shih - Plano TX, US
Lance W. Barron - Wylie TX, US

Texas Instruments Incorporated - Dallas TX

H04R 11/04
H01L 29/84
H01L 21/04

438396, 216 17, 257416, 257E2104, 257E29324, 381174

A capacitive microphone transducer integrated into an integrated circuit includes a fixed plate and a membrane formed in or above an interconnect region of the integrated circuit. A process of forming an integrated circuit containing a capacitive microphone transducer includes etching access trenches through the fixed plate to a region defined for the back cavity, filling the access trenches with a sacrificial material, and removing a portion of the sacrificial material from a back side of the integrated circuit.

2008005, Mar 6, 2008

Sep 6, 2006

11/517523

Jason M. Neidrich - Fairview TX, US
Lance W. Barron - Plano TX, US

G02B 26/00

359290

In accordance with the teachings of the present invention, a spatial light modulator mirror metal having enhanced reflectivity is provided. In a particular embodiment of the present invention, a light processing system includes a light source operable to provide a light beam along a light path and a spatial light modulator positioned in the light path, the spatial light modulator comprising an array of pixel elements, each pixel element comprising a deformable micro-mirror operable to reflect the light beam in at least one direction. At least a portion of each deformable micro-mirror comprises an Al—Cu alloy. A controller electrically connected to the spatial light modulator is operable to provide electrical signals to the spatial light modulator to cause the spatial light modulator to selectively deform the pixel elements, thereby selectively reflecting incident light beams along a projection light path.

2013008, Apr 11, 2013

Oct 8, 2012

13/646864

TEXAS INSTRUMENTS INCORPORATED - Dallas TX, US
Lance W. Barron - Wylie TX, US
Cuiling Gong - Dallas TX, US

TEXAS INSTRUMENTS INCORPORATED - Dallas TX

H01L 23/48
H01L 21/28

257499, 438400, 257E2301, 257E21158

A MEMS logic device comprising agate which pivots on a torsion hinge, two conductive channels on the gate, one on each side of the torsion hinge, source and drain landing pads under the channels, and two body bias elements under the gate, one on each side of the torsion hinge, so that applying a threshold bias between one body bias element and the gate will pivot the gate so that one channel connects the respective source and drain landing pad, and vice versa. An integrated circuit with MEMS logic devices on the dielectric layer, with the source and drain landing pads connected to metal interconnects of the integrated circuit. A process of forming the MEM switch.

2020039, Dec 24, 2020

Jun 19, 2020

16/907129

- Greensboro NC, US
Lance Barron - Plano TX, US
Richard L. Knipe - McKinney TX, US

B81B 3/00
B81C 1/00

A method of forming a microelectromechanical device wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductors. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.

2020039, Dec 24, 2020

Jun 19, 2020

16/907123

- Greensboro NC, US
Lance Barron - Plano TX, US
Mickael Renault - San Jose CA, US
Shibajyoti Ghosh Dastider - Roseville CA, US
Jacques Marcel Muyango - Rocklin CA, US
Richard L. Knipe - McKinney TX, US

B81C 1/00
B81B 3/00

A method of forming a microelectromechanical device wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductor. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.

2020040, Dec 24, 2020

Jun 19, 2020

16/907138

- Greensboro NC, US
Lance Barron - Plano TX, US
Richard L. Knipe - McKinney TX, US

H01H 59/00

A method of forming a microelectromechanical device is disclosed wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductor. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.

2020018, Jun 11, 2020

Sep 14, 2017

16/343912

- San Jose CA, US
Robertus Petrus VAN KAMPEN - S-Hertogenbosch, NL
James Douglas HUFFMAN - Plano TX, US
Lance BARRON - Plano TX, US

H01H 59/00
H01H 1/00

The present disclosure generally relates to the design of a MEMS ohmic switch which provides for a low-impact landing of the MEMS device movable plate on the RF contact and a high restoring force for breaking the contacts to improve the lifetime of the switch. The switch has at least one contact electrode disposed off-center of the switch device and also has a secondary landing post disposed near the center of the switch device. The secondary landing post extends to a greater height above the substrate as compared to the RF contact of the contact electrode so that the movable plate contacts the secondary landing post first and then gently lands on the RF contact. Upon release, the movable plate will disengage from the RF contact prior to disengaging from the secondary landing post and have a longer lifetime due to the high restoring force.