Jin Ri Liu, Age 5514205 Roosevelt Ave #511, Flushing, NY 11354

2018014, May 24, 2018

May 11, 2016

15/572768

- Los Angeles CA, US
Jin Liu - Philadelphia PA, US

Alfred E. Mann Institute for Biomedical Engineer- ing at the University of Southern California - Los Angeles CA

C12N 5/071
A61K 35/39
C12Q 1/6881
A61P 5/48
A61K 38/00

This disclosure relates to pancreatic stromal progenitor cells. This disclosure also relates to isolation of pancreatic stromal progenitor cells. This disclosure further relates to a composition comprising pancreatic stromal progenitor cells and preparation of this composition. This disclosure also relates to a treatment comprising administering a composition comprising pancreatic stromal progenitor cells. This disclosure also relates to a treatment of diabetes mellitus comprising administering a composition comprising pancreatic stromal progenitor cells.

2018006, Mar 8, 2018

Nov 13, 2017

15/811198

- Armonk NY, US
Jin Liu - Chappaqua NY, US
Lei Zhuang - White Plains NY, US

H01L 23/48
H01L 21/768
H01L 21/308
H01L 21/033
H01L 21/74
H01L 21/311

A first photoresist layer is patterned with a first pattern that includes an opening in a region between areas of two adjacent via holes to be formed. The opening in the first photoresist is transferred into a template layer to form a line trench therein. The lateral dimension of the trench is reduced by depositing a contiguous spacer layer that does not fill the trench completely. An etch-resistant material layer is conformally deposited and fills the trench, and is subsequently recessed to form an etch-resistant material portion filling the trench. A second photoresist layer is applied and patterned with a second pattern, which includes an opening that includes areas of two via holes and an area therebetween. A composite pattern of an intersection of the second pattern and the complement of the pattern of the etch-resistant material portion is transferred through the template layer.

2017011, Apr 27, 2017

May 14, 2015

15/311312

- Wilmington DE, US
Kostantinos KOURTAKIS - Media PA, US
Jin J. LIU - Wilmington DE, US
Mark Gerrit ROELOFS - Earleville MD, US

H01M 10/0569
H01M 10/0568
H01M 10/0567
H01M 4/583
H01M 4/485
H01M 4/505
H01M 4/525
H01M 10/0525
H01M 4/1315

Described are electrolyte compositions containing a non-fluorinated carbonate, a fluorinated solvent, a cyclic sulfate, at least one lithium borate salt selected from lithium bis(oxalato)borate, lithium difluoro(oxalato)borate, lithium tetrafluoroborate, or mixtures thereof, and at least one electrolyte salt. The cyclic sulfate can be represented by the formula:wherein each A is independently a hydrogen or an optionally fluorinated vinyl, allyl, acetylenic, propargyl, or C-Calkyl group. The electrolyte composition may further comprise a fluorinated cyclic carbonate. The electrolyte compositions are useful in electrochemical cells, such as lithium ion batteries.

2016003, Feb 4, 2016

Oct 15, 2015

14/884076

- Armonk NY, US
Jin Liu - Chappaqua NY, US
Lei Zhuang - White Plains NY, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

H01L 23/48

A first photoresist layer is patterned with a first pattern that includes an opening in a region between areas of two adjacent via holes to be formed. The opening in the first photoresist is transferred into a template layer to form a line trench therein. The lateral dimension of the trench is reduced by depositing a contiguous spacer layer that does not fill the trench completely. An etch-resistant material layer is conformally deposited and fills the trench, and is subsequently recessed to form an etch-resistant material portion filling the trench. A second photoresist layer is applied and patterned with a second pattern, which includes an opening that includes areas of two via holes and an area therebetween. A composite pattern of an intersection of the second pattern and the complement of the pattern of the etch-resistant material portion is transferred through the template layer.

2015004, Feb 12, 2015

Oct 24, 2014

14/522626

- Armonk NY, US
Jin Liu - Chappaqua NY, US
Brian W. Messenger - Newburgh NY, US
Oliver D. Patterson - Poughkeepsie NY, US

H01L 21/66
H01L 49/02
H01L 21/762

257 48, 438 18

A method including forming a first test structure and a second test structure in electrical contact with an inner buried plate and an outer buried plate, respectively, where the first and second test structures each comprise a deep trench filled with a conductive material, and measuring the voltage of the inner buried plate and the outer buried plate immediately after the formation of a deep trench isolation structure, where the inner buried plate and the outer buried plate are positioned on opposite sides of the deep trench isolation structure.

2014014, May 29, 2014

Nov 28, 2012

13/686954

- Armonk NY, US
Jin Liu - Chappaqua NY, US
Brian W. Messenger - Newburgh NY, US
Oliver D. Patterson - Poughkeepsie NY, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

H01L 21/66

257 48, 438 18, 438386

A method including forming a first test structure and a second test structure in electrical contact with an inner buried plate and an outer buried plate, respectively, where the first and second test structures each comprise a deep trench filled with a conductive material, and measuring the voltage of the inner buried plate and the outer buried plate immediately after the formation of a deep trench isolation structure, where the inner buried plate and the outer buried plate are positioned on opposite sides of the deep trench isolation structure.